ETC IRGBC20KD2-S

PD - 9.1125
IRGBC20KD2-S
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated
UltraFast CoPack IGBT
C
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFRED TM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 600V
VCE(sat) ≤ 3.5V
G
@VGE = 15V, IC = 6.0A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
Parameter
VCES
I C @ TC = 25°C
I C @ TC = 100°C
I CM
I LM
I F @ TC = 100°C
I FM
t sc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
10
6.0
20
20
7.0
20
10
± 20
60
24
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, (PCB Mount)**
Junction-to-Ambient, typical socket mount
Weight
** When mounted on 1" square PCB (FR-4 or G-10 Material)
Min.
Typ.
Max.
-------------------------
------------------2 (0.07)
2.1
3.5
40
80
------
For recommended footprint and soldering techniques refer to application note #AN-994.
Units
°C/W
g (oz)
IRGBC20KD2-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltageƒ 600
∆V(BR)CES /∆T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage
---VCE(on)
------VGE(th)
Gate Threshold Voltage
3.0
∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance „
1.9
gfe
Zero Gate Voltage Collector Current
---ICES
---V FM
Diode Forward Voltage Drop
------Gate-to-Emitter Leakage Current
---IGES
V(BR)CES
Typ.
---0.37
2.4
3.6
2.8
----11
3.3
------1.4
1.3
----
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---- V/°C VGE = 0V, IC = 1.0mA
3.5
IC = 6.0A
VGE = 15V
See Fig. 2, 5
---V
IC = 10A
---IC = 6.0A, TJ = 150°C
5.5
VCE = VGE, IC = 250µA
---- mV/°C VCE = VGE, IC = 250µA
---S
VCE = 100V, IC = 6.0A
250
µA
VGE = 0V, VCE = 600V
1700
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 8.0A
See Fig. 13
1.6
IC = 8.0A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max. Units
Conditions
26
IC = 6.0A
6.8
nC
VCC = 400V
11
See Fig. 8
---TJ = 25°C
---ns
IC = 6.0A, VCC = 480V
210
VGE = 15V, RG = 50Ω
120
Energy losses include "tail" and
---diode reverse recovery.
---mJ
See Fig. 9, 10, 11, 18
0.90
---µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω, VCPK < 500V
Turn-On Delay Time
---52
---TJ = 150°C,
See Fig. 9, 10, 11, 18
t d(on)
Rise Time
---35
---ns
IC = 6.0A, VCC = 480V
tr
t d(off)
Turn-Off Delay Time
---- 170 ---VGE = 15V, RG = 50Ω
Fall Time
---- 170 ---Energy losses include "tail" and
tf
Total Switching Loss
---- 0.7 ---mJ diode reverse recovery.
Ets
Internal Emitter Inductance
---- 7.5 ---nH Measured 5mm from package
LE
Input Capacitance
---- 350 ---VGE = 0V
Cies
Coes
Output Capacitance
---45
---pF
VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
---- 4.7 ---ƒ = 1.0MHz
Cres
Diode Reverse Recovery Time
---37
55
ns
TJ = 25°C See Fig.
t rr
---55
90
TJ = 125°C
14
IF = 8.0A
Diode Peak Reverse Recovery Current ---- 3.5 5.0
A
TJ = 25°C See Fig.
Irr
---- 4.5 8.0
TJ = 125°C
15
VR = 200V
Diode Reverse Recovery Charge
---65 138
nC
TJ = 25°C See Fig.
Q rr
---- 124 360
TJ = 125°C
16
di/dt = 200A/
240
µs
di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/µs
TJ = 25°C See Fig.
During t b ---210
Notes:
---TJ = 125°C
17 CES), VGE=20V, L=10µH,
„ Pulse width 5.0µs,
‚ VCC=80%(V
single shot.
R
=
50Ω,
( See fig. 19 )
 Repetitive rating; VGE=20V, pulse width limited
G
by max. junction temperature. ( See fig. 20 )
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Qg
Qge
Q gc
t d(on)
tr
t d(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min.
------------------------------10
Typ.
17
4.3
6.4
59
38
110
80
0.28
0.15
0.43
----
IRGBC20KD2-S
LOAD CURRENT (A)
8
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 13.5W
6
4
60% of rated
v oltage
2
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25°C
10
TJ = 150°C
1
0.1
0.1
VGE = 15V
20µs PULSE WIDTH
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
IC , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
TJ = 150°C
TJ = 25°C
VCC = 100V
5µs PULSE WIDTH
1
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20
IRGBC20KD2-S
VGE = 15V
8
6
4
2
5.0
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
10
50
75
100
125
IC = 12A
4.0
3.0
IC = 6.0A
2.0
I C = 3.0A
1.0
-60 -40 -20
0
25
VGE = 15V
80µs PULSE WIDTH
150
T C , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
10
IRGBC20KD2-S
20
700
600
C, Capacitance (pF)
500
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V,
f = 1MHz
Cies = C ge + C gc , Cce SHORTED
Cres = C gc
Coes = C ce + C gc
VCE = 480V
I C = 6.0A
16
Cies
12
400
C oes
300
200
Cres
100
8
4
0
0
1
10
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
0.475
VCC
VGE
TC
IC
8
12
16
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 6.0A
Total Switching Losses (mJ)
0.480
4
Q g , Total Gate Charge (nC)
V CE , Collector-to-Emitter Voltage (V)
0.470
0.465
0.460
RG = 50 Ω
V GE = 15V
V CC = 480V
I C = 12A
1
IC = 6.0A
I C = 3.0A
0.455
0.1
-60 -40 -20
0.450
20
25
30
35
40
45
50
55
R G , Gate Resistance (Ω )
0
20
40
60
80 100 120 140 160
TC, Case Temperature (°C)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
IRGBC20KD2-S
100
I C , Collector-to-Emitter Current (A)
RG = 50 Ω
T C = 150°C
V CC = 480V
1.6 V GE = 15V
1.2
0.8
0.4
VGE
= 20V
GE
TJ = 125°C
10
SAFE OPERATING AREA
1
0.1
0.0
0
3
6
9
12
1
15
10
100
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
2.0
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
IRGBC20KD2-S
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I F = 8.0A
I IRRM - (A)
t rr - (ns)
IF = 16A
I F = 16A
10
IF = 8.0A
40
I F = 4.0A
IF = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif /dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
300
I F = 16A
Q
RR
- (nC)
400
200
I F = 8.0A
I F = 4.0A
1000
IF = 8.0A
I F = 16A
100
IF = 4.0A
0
100
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
1000
IRGBC20KD2-S
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
Ic
90% Ic
10% Vce
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vcc
Vpk
Irr
10% Ic
90% Ic
td(on)
tr
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRGBC20KD2-S
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
D.U.T.
L
1000V
R L=
Vc*
480V
4 X IC @25°C
0 - 480V
50V
6000µF
100V
Fig. 20 - Pulsed Collector Current
Test Circuit
Fig. 19 - Clamped Inductive Load Test
Circuit
4.69 (0.185)
4.20 (0.165)
10.54 (0.415)
1.32 (0.052)
10.29 (0.405)
1.22 (0.048)
1.40 (0.055) MAX.
4
10.67 (0.420)
15.49 (0.610)
14.73 (0.580)
9.91 (0.390)
1
2
2°
3
1.78 (0.070)
1.27 (0.050)
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
5° TYP.
2.79 (0.110)
2.29 (0.090)
1.15 (0.045) MIN.
0.64 (0.025)
0.46 (0.018)
1.40 (0.055)
0.010 (0.004)
1.15 (0.045)
2.89 (0.114)
2.64 (0.104)
0.93 (0.037)
0.69 (0.027)
2.54 (0.100)
5.08 (0.200) REF.
OUTLINE SMD-220
Dimensions in Millimeters and (Inches)