PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • IGBT co-packaged with ultrafast soft recovery antiparallel diode • Creepage distance increased to 5.35mm VCES = 1200V VCE(on) typ. = 2.97V G @VGE = 15V, IC = 42A E n-ch an nel Benefits • Highest current rating copack IGBT • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • HEXFREDTM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 1200 78 42 156 156 42 156 10 ± 20 350 140 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance\ Mechanical Parameter RθJC RθJC RθCS RθJA www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. Typ. Max. ––– ––– ––– ––– 20.0(2.0) ––– ––– ––– 0.24 ––– ––– 6 (0.21) 0.36 0.69 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) 1 5/11/99 IRG4PSH71KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 1200 — — V Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C Collector-to-Emitter Saturation Voltage — 2.97 3.9 — 3.44 — V — 2.60 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -12 — mV/°C Forward Transconductance 25 38 — S Zero Gate Voltage Collector Current — — 500 µA — — 10 mA Diode Forward Voltage Drop — 2.5 3.7 V — 2.4 — Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 10mA IC = 42A VGE = 15V See Fig. 2, 5 IC = 78A IC = 42A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 1.5mA VCE = 50V, IC = 42A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 42A See Fig. 13 IC = 42A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M /dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 410 610 IC = 42A 47 70 nC VCC = 400V See Fig.8 145 220 VGE = 15V 67 — 84 — TJ = 25°C ns 230 350 IC = 42A, VCC = 800V 130 190 VGE = 15V, RG = 5.0Ω 5.68 — Energy losses include "tail" 3.23 — mJ and diode reverse recovery 8.90 11.6 See Fig. 9,10,18 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω 65 — TJ = 150°C, See Fig. 11,18 87 — IC = 42A, VCC = 800V ns 370 — VGE = 15V, RG = 5.0Ω 290 — Energy losses include "tail" 13.7 — mJ and diode reverse recovery 13 — nH Measured 5mm from package 5770 — VGE = 0V 400 — pF VCC = 30V See Fig. 7 100 — ƒ = 1.0MHz 107 160 ns TJ = 25°C See Fig. 160 240 TJ = 125°C 14 IF = 42A 10 15 A TJ = 25°C See Fig. 16 24 TJ = 125°C 15 VR = 200V 680 1020 nC TJ = 25°C See Fig. 1400 2100 TJ = 125°C 16 di/dt = 200A/µs 250 — A/µs TJ = 25°C See Fig. 320 — TJ = 125°C 17 www.irf.com IRG4PSH71KD 40 F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d LOAD CURRENT (A) 30 P o w e r D is s ip a tio n = 58 W S q u a re w a v e : 6 0% of rate d volta ge 20 I 10 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 1000 100 TJ = 150 °C TJ = 25 °C 10 V GE = 15V 80µs PULSE WIDTH 1 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) Ic , Collector-to-Emitter Current(A) (A) I C , Collector Current 1000 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PSH71KD 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 80 60 40 20 50 75 100 125 150 I C = 84 A 3.0 I C = 42 A I C = 21 A 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature 4.0 2.0 -60 -40 -20 0 25 VGE = 15V 80 us PULSE WIDTH Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (ZthJC) 1 D = 0 .50 0.1 0 .20 PDM 0 .1 0 0.05 0.0 2 0.01 t 1 t2 SIN G L E PU L SE (T HE R M A L R ES PO N SE ) Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 A 100 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSH71KD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 8000 Cies 6000 4000 2000 Coes 20 VGE , Gate-to-Emitter Voltage (V) 10000 VCC = 400V I C = 42A 15 10 5 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 V CC = 800V V GE = 15V TJ = 25 ° C 14 I C = 42A 13 12 11 10 9 20 30 40 RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com (Ω) 300 400 500 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 15 10 200 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 100 50 RG = 5.0 Ω VGE = 15V VCC = 800V IC = 84 A IC = 42 A 10 IC = 21 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PSH71KD 1000 = 5.0 Ω = 150 ° C = 800V = 15V I C , Collector Current (A) RG TJ VCC VGE 30 VGE = 20V T J = 125 oC 100 20 10 10 SAFE OPERATING AREA 0 20 40 60 80 1 100 1 I C , Collector Current (A) 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 1000 Instantaneous forward current - IF (A) Total Switching Losses (mJ) 40 100 TJ = 150°C TJ = 125°C TJ = 25°C 10 1 0.0 2.0 4.0 6.0 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PSH71KD 300 100 I F = 84A I F = 42A I F = 21A I F = 84A I F = 42A I F = 21A Irr- ( A) trr- (nC) 200 10 100 VR = 2 00V T J = 12 5°C T J = 25 °C VR = 200 V T J = 12 5°C T J = 25 °C 0 100 di f /dt - (A/µ s) 1 100 1000 1000 di f /dt - (A/µ s ) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 10000 5000 VR = 2 00V T J = 125°C T J = 25°C 4000 I F = 84A I F = 42A Qrr- (nC) 3000 di (rec) M/dt- (A /µs) I F = 84A I F = 42A I F = 21A 2000 IF = 21A 1000 1000 VR = 2 00V T J = 1 2 5 °C T J = 2 5 °C 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 100 100 1000 di f /dt - (A/µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PSH71KD 90% Vge Same ty pe device as D .U.T. +Vge V ce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf E o ff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Ic ddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E on = V Vce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PSH71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 800V 4 X IC @25°C 0 - 800V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PSH71KD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1% Pulse width 5.0µs, single shot Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 10 www.irf.com