ETC IS654A

IS654A
IS655A
3mm DIA. MATCHED INFRARED
EMITTER DETECTOR PAIR
PHOTOTRANSISTOR OUTPUT
Dimensions in mm
4.0
DESCRIPTION
The IS654A ( Gallium Arsenide Emitting
Diode ) and the IS655A ( NPN Silicon Photo
Transistor ) are a mechanically and spectrally
matched emitter detector end looking pair.
2
FEATURES
l
T-1 standard 3mm DIA.
l
Detector has dark plastic package for
visible light cut out
l
LED has high output, Radiant Intensity :IE = 2mW/sr min. at IF = 20mA
l
All electrical parameters are 100% tested
1
5.3
1.0
12.7min.
2.6 1.5
3.0
APPLICATIONS
l
Floppy disk drives
l
Infrared applied systems
l
VCRs, Video camera
l
Optoelectronic switches
1.5
max
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
1
Storage Temperature
-40°C to + 85°C
Operating Temperature
-25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
1.0 min.
IS654A
- Anode
1
2
- Cathode
60mA
5V
90mW
2
2
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current IC
Power Dissipation
30V
5V
20mA
50mW
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
IS655A
- Emitter
1
2
1
- Collector
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92102-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
IS654A
Emitter
IS655A
Detector
Forward Voltage (VF)
Reverse Current (IR)
Radiant Flux (IE)
Peak Emission Wavelength
Spectrum Radiation Bandwidth
Beam Emission Angle
MIN TYP MAX UNITS
1.2
1.5
940
50
±20
IF = 20mA
VR = 5V
IF = 40mA
IF = 40mA
IF = 40mA
30
V
IC = 1mA
Ee = 0mW/cm2
Emitter-collector Breakdown (BVECO)
5
V
IE = 100µA
Ee = 0mW/cm2
nA
VCE = 10V
Ee = 0mW/cm2
mA
5V VCE
Ee = 1mW/cm2
0.4
V
IC = 0.5mA
Ee = 0.5mW/cm2
40
35
µs
µs
VCC= 20V, IC= 1mA,
RL = 1kΩ
nm
deg.
IF = 40mA
On-State Collector Current IC ( ON )
100
1
Collector-emitter Saturation Voltage VCE(SAT)
Rise Time
Fall Time
7/12/00
V
µA
mW/sr
nm
nm
deg.
Collector-emitter Breakdown (BVCEO)
( Note 1 )
Collector-emitter Dark Current (ICEO)
Note 1
1.6
100
TEST CONDITION
tr
tf
10
8
Peak Sensitivity Wavelength
Beam Acceptance Angle
940
±20
Special Selections are available on request. Please consult the factory.
DB92102-AAS/A2
Collector Power Dissipation vs.
Ambient Temperature
Forward Current vs. Ambient
Temperature
60
Collector power dissipation P C (mW)
80
Forward current I F (mA)
70
60
50
40
30
20
10
0
50
40
30
20
10
0
-25
0
25
50
75
100
Ambient temperature TA ( °C )
-25
125
0
25
50
75
100
Ambient temperature TA ( °C )
Spectral Distribution
Rise and Fall Time vs.
Load Resistance
1.0
100
VCC = 20V
IC = 1mA
TA = 25°C
Rise and fall time tr, tf ( µs)
90
Relative radiant intensity
125
0.5
80
70
60
tr
50
tf
40
30
20
10
0
840
940
0
1040
0
1
2
3
4
5
6
7
8
9
10
Load resistance RL (kΩ)
Wavelength (nm)
Relative Radiant Intensity vs.
Forward Current
Relative Collector Current vs.
Irradiance
5.0
2.5
VCE = 5V
4.0
Relative collector current
Relative radiant intensity
2.0
1.5
1.0
0.5
0
2.0
1.0
0
0
20
40
60
80
Forward current IF (mA)
7/12/00
3.0
100
0
1
2
3
4
2
Irradiance Ee ( mW/cm )
5
DB92102-AAS/A2