IXYS IXFN132N50P3

Advance Technical Information
IXFN132N50P3
Polar3TM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
=
=
≤
≤
500V
112A
Ω
39mΩ
250ns
miniBLOC
E153432
S
G
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
112
A
IDM
TC = 25°C, Pulse Width Limited by TJM
330
A
IA
EAS
TC = 25°C
TC = 25°C
66
3
A
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
35
V/ns
PD
TC = 25°C
1500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
S
D
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z
z
VISOL
Md
50/60 Hz, RMS, t = 1minute
IISOL ≤ 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Weight
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
D = Drain
z
z
z
z
International Standard Package
miniBLOC with Aluminum Nitride
Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
Applications
z
V
z
V
z
VGS = ±30V, VDS = 0V
±200 nA
z
IDSS
VDS = VDSS, VGS = 0V
50 μA
6 mA
RDS(on)
VGS = 10V, ID = 66A, Note 1
TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
5.0
Easy to Mount
Space Savings
39 mΩ
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
DS100316(03/11)
IXFN132N50P3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
68
VDS = 10V, ID = 66A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
Qgs
115
S
18.6
nF
1750
pF
5.0
pF
1.0
Ω
44
ns
9
ns
72
ns
8
ns
250
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A
RG = 1Ω (External)
Qg(on)
SOT-227B (IXFN) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A
Qgd
90
nC
52
nC
(M4 screws (4x) supplied)
0.083 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
132
A
ISM
Repetitive, Pulse Width Limited by TJM
530
A
VSD
IF = 100A, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
Note
IF = 66A, -di/dt = 100A/μs
1.9
16.4
VR = 100V, VGS = 0V
250 ns
μC
A
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN132N50P3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
140
250
VGS = 10V
8V
120
VGS = 10V
8V
200
7V
7V
ID - Amperes
ID - Amperes
100
80
6V
60
150
100
40
6V
50
20
5V
5V
0
0
0
1
2
3
4
5
0
6
5
10
20
25
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
140
3.2
VGS = 10V
8V
7V
VGS = 10V
2.8
R DS(on) - Normalized
120
100
ID - Amperes
15
VDS - Volts
VDS - Volts
6V
80
60
40
2.4
I D = 132A
2.0
I D = 66A
1.6
1.2
5V
20
0.8
4V
0
0.4
0
2
4
6
8
10
12
-50
14
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
125
150
125
150
120
VGS = 10V
TJ = 125ºC
2.6
100
2.2
80
ID - Amperes
R DS(on) - Normalized
-25
VDS - Volts
1.8
1.4
60
40
TJ = 25ºC
1.0
20
0.6
0
0
50
100
150
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
200
250
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFN132N50P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
200
180
180
TJ = - 40ºC
160
160
TJ = 125ºC
25ºC
- 40ºC
120
25ºC
140
g f s - Siemens
ID - Amperes
140
100
80
120
125ºC
100
80
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
7.5
20
40
VGS - Volts
80
100
120
140
160
180
200
220
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
10
VDS = 250V
9
300
I D = 66A
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
60
200
150
TJ = 125ºC
100
6
5
4
3
2
TJ = 25ºC
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
50
VSD - Volts
100
150
200
250
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
1000
Ciss
RDS(on) Limit
100
1,000
100µs
ID - Amperes
Capacitance - PicoFarads
10,000
Coss
100
10
10
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
f = 1 MHz
1
1ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFN132N50P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_132N50P3(K9)03-17-11