IXFA4N100P IXFP4N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A ≤ 3.3Ω Ω TO-263 AA (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V G VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 4 8 A A IA TC = 25°C 4 A EAS TC = 25°C 200 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 150 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 Nm/lb.in. Nm/lb.in. 2.5 3.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 S D (Tab) TO-220AB (IXFP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 © 2010 IXYS CORPORATION, All Rights Reserved z z High Power Density Easy to Mount Space Savings V 6.0 V ±100 nA 10 μA 750 μA 3.3 Ω Applications z z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99921A(7/10) IXFA4N100P IXFP4N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS= 20V, ID = 0.5 • ID25, Note 1 1.8 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 3.0 S 1.6 Ω 1456 pF 90 pF 16 pF 24 ns 36 ns 37 ns 50 ns 26 nC 9 nC 12 nC Pins: 1 - Gate 2 - Drain 0.83 °C/W RthJC RthCS TO-220 (IXFP) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A IF = IS, VGS = 0V, Note 1 1.3 V 300 ns IF = 2A, VGS = 0V, -di/dt = 100A/μs VR = 100V 5.30 A 0.34 μC TO-263 (IXFA) Outline Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA4N100P IXFP4N100P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 4 8 VGS = 10V 8V 7V 3.5 3 6 ID - Amperes ID - Amperes VGS = 10V 8V 7 2.5 6V 2 1.5 7V 5 4 6V 3 2 1 5V 0.5 1 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature 35 3.0 4 VGS = 10V 7V 3.6 VGS = 10V 2.6 R DS(on) - Normalized 3.2 ID - Amperes 2.8 6V 2.4 2 1.6 1.2 0.8 5V I D = 4A 2.2 I D = 2A 1.8 1.4 1.0 0.6 0.4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 4.5 VGS = 10V 2.4 4 TJ = 125ºC 2.2 3.5 2.0 3 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 1.4 2.5 2 1.5 1.2 1 TJ = 25ºC 1.0 0.5 0.8 0 0 1 2 3 4 5 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA4N100P IXFP4N100P Fig. 7. Input Admittance 5 4.5 4.5 4 4 3.5 3 TJ = - 40ºC 25ºC 3.5 TJ = 125ºC 25ºC - 40ºC g f s - Siemens ID - Amperes Fig. 8. Transconductance 5 2.5 2 3 125ºC 2.5 2 1.5 1.5 1 1 0.5 0.5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 2 VGS - Volts 2.5 3 3.5 4 4.5 5 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 12 16 VDS = 500V 14 I D = 2A 10 I G = 10mA 12 VGS - Volts IS - Amperes 8 6 4 10 8 6 TJ = 125ºC 4 TJ = 25ºC 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 15 VSD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1 Ciss 1,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_4N100P(45-744)10-08-08