IXYS IXFX55N50F

HiPerRF TM
Power MOSFETs
IXFX 55N50F
IXFK 55N50F
VDSS = 500 V
ID25 = 55 A
Ω
RDS(on) = 85 mΩ
F-Class: MegaHertz Switching
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
PLUS 247TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
G
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
55
220
55
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
3.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
RF capable Mosfets
Rugged polysilicon gate cell structure
●
Double metal process for low gate
resistance
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
●
●
Applications
●
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2002 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
5.5 V
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
3 mA
85 mΩ
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
Pulse generation
●
Laser drivers
●
Advantages
●
●
●
PLUS 247TM package for clip or spring
mounting
Space savings
High power density
98855-A (9/02)
IXFK 55N50F
IXFX 55N50F
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 • ID25
Note 1
22
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
33
S
6700
pF
1250
pF
C rss
330
pF
td(on)
24
ns
20
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 Ω (External)
45
ns
9.6
ns
195
nC
50
nC
95
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.21
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 25A, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
55
A
220
A
1.5
V
250
ns
1.0
µC
10
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFK 55N50F
IXFX 55N50F
Fig. 2. Output Characteristics at 125oC
Fig. 1. Output Characteristics at 25oC
100
140
TJ = 25OC
100
VGS = 10V
9V
8V
TJ = 125OC
VGS = 10V
9V
8V
80
ID - Amperes
ID - Amperes
120
80
7V
60
40
40
6V
20
6V
20
7V
60
5V
5V
0
0
2
4
6
8
0
10
12
0
6
12
VDS - Volts
VDS - Volts
Fig. 3. RDS(ON) vs. Drain Current
Fig. 4. RDS(ON) vs. TJ
4.0
3
VGS = 10V
VGS = 10V
RDS(ON) - Normalized
RDS(ON) - Normalized
3.5
O
TJ = 150 C
3.0
2.5
2.0
1.5
TJ = 25OC
1.0
0.5
0
10
20
30
40
2
ID = 27.5A
1
0
50
ID = 55A
-25
0
ID - Amperes
-50
50
75
100 125 150
Fig. 6. Admittance Curves
20
15
ID - Amperes
60
55
50
45
40
35
30
25
20
15
10
5
0
25
T J - Degrees C
Fig. 5. Drain Current vs. Case Temperature
ID - Amperes
18
10
TJ = 125oC
5
TJ = 25oC
TJ = -40oC
-25
0
25
50
75
T C - Degrees C
© 2002 IXYS All rights reserved
100 125 150
0
3.5
4.0
4.5
5.0
VGS - Volts
5.5
6.0
6.5
IXFK 55N50F
IXFX 55N50F
Fig. 8. Capacitance Curves
Fig. 7. Gate Charge Characteristic Curve
15
10000
Ciss
5000
Capacitance - pF
VGS - Volts
VDS = 250V
ID = 27.5A
10
5
f = 1MHz
2500
Coss
1000
Crss
500
0
0
50
100
150
200
250
250
300
0
Gate Charge - nC
5
10
15
20
25
30
VDS - Volts
Fig. 9. Source Current vs. Source to Drain Voltage
25
ID - Amperes
20
15
O
O
TJ = 25 C
TJ = 125 C
10
5
0
0.2
0.4
0.6
0.8
1.0
VSD - Volts
Fig. 10. Thermal Impedance
ZthJC - (K/W)
1
0.1
Single Pulse
0.01
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1