HiPerFASTTM IGBT IXGH40N30A VCES IC25 VCE(sat) tfi = 300 V = 60 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH PC TC = 25°C ICM = 80 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-247 AD 6 g TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 300 2.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 5 V V 200 1 mA mA ±100 nA 2.1 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages • High power density • Suitable for surface mounting • Switching speed for high frequency applications • Easy to mount with 1 screw, (isolated mounting screw hole) 97507B (7/00) 1-2 IXGH40N30A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 28 S 2500 pF 210 pF C res 60 pF Qg 145 170 nC 23 35 nC 50 75 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 20 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W 45 ns 100 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 120 ns 0.75 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°C 25 t ri IC = IC90, VGE = 15 V, L = 100 mH 45 ns Eon VCE = 0.8 VCES, RG = Roff = 1.0 W 0.3 mJ td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 150 300 ns 220 330 ns 1.6 2.4 mJ RthJC RthCK © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.62 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2