Advance Technical Information IXGH56N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES 600 600 V V VGEM Continuous Transient ± 20 ± 30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 130 56 350 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 150 VCE ≤ VCES A Pd TC = 25°C 330 W - 55 ... +150 150 - 40 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting torque Weight G G CD ES G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 44A, VGE = 15V, Note 1 5.0 z z z V z V z 50 μA 500 μA TJ = 125°C z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 1.49 1.47 1.80 V V DS100175(08/09) IXGH56N60B3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = 44A, VCE = 10V, Note 1 36 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 44A, VGE = 15V VCE = 480V, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = 44A, VGE = 15V VCE = 480V, RG = 5Ω Note 2 RthJC RthCS Notes: 60 S 3950 220 56 pF pF pF 138 nC 25 nC 47 nC 26 41 1.30 155 95 1.05 ns ns mJ ns ns mJ IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C TO-247 (IXGH) Outline 165 2.00 26 37 2.34 220 165 2.20 ns ns mJ ns ns mJ 0.21 0.375 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH56N60B3 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 90 300 VGE = 15V 13V 11V 80 VGE = 15V 13V 11V 250 70 IC - Amperes IC - Amperes 9V 60 50 40 7V 200 9V 150 100 30 20 7V 50 10 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 1 2 3 4 Fig. 3. Output Characteristics 6 7 8 9 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature @ T J = 125ºC 1.3 90 VGE = 15V 13V 11V 80 VGE = 15V 1.2 70 I C = 88A I C = 44A 9V VCE(sat) - Normalized IC - Amperes 5 VCE - Volts VCE - Volts 60 7V 50 40 30 1.1 1.0 0.9 20 0.8 I 5V 10 = 22A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 2.2 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.0 180 TJ = 25ºC 3.5 160 140 I 2.5 C IC - Amperes 3.0 VCE - Volts C = 88A 44A 22A 2.0 120 100 TJ = 125ºC 25ºC - 40ºC 80 60 40 1.5 20 0 1.0 5 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXGH56N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 100 TJ = - 40ºC 90 80 I C = 40A I G = 10mA 12 70 25ºC 10 60 VGE - Volts g f s - Siemens VCE = 300V 14 125ºC 50 40 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 120 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 140 160 120 1,000 IC - Amperes Capacitance - PicoFarads 140 Cies Coes 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC 20 RG = 5Ω dv / dt < 10V / ns 0 100 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_56N60B3(65)5-05-08-B IXGH56N60B3 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 6.5 6 5.5 5 6 Eoff I C = 72A Eoff - MilliJoules ---5 Eoff Eon - --- TJ = 125ºC , VGE = 15V 3 3.5 VCE = 480V I C = 36A 2.5 TJ = 125ºC 4 4 3 3 2 2 Eon - MilliJoules 4.5 E on - MilliJoules 4 2 Eon RG = 5Ω , VGE = 15V VCE = 480V Eoff - MilliJoules 5 TJ = 25ºC 1 1.5 1 0.5 0 1 I C = 18A 0 5 10 15 20 25 30 35 40 45 0 15 50 20 25 30 35 40 RG - Ohms ---- C = 72A 3 3 I C = 36A 2 2 1 Eon - MilliJoules Eoff - MilliJoules I 4 1 I C = 18A 0 35 45 55 65 75 85 95 105 115 200 700 180 600 I 500 I 140 300 C = 36A 200 5 10 15 20 190 120 180 100 160 TJ = 25ºC 140 60 120 45 50 55 60 65 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 75 t f i - Nanoseconds t f i - Nanoseconds 200 40 35 40 45 50 td(off) - - - I RG = 5Ω , VGE = 15V C 240 = 18A, 36A, 72A VCE = 480V 170 225 150 210 130 195 110 180 I 90 C = 36A, 18A 70 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 165 150 125 t d(off) - Nanoseconds 140 t d(off) - Nanoseconds 220 TJ = 125ºC 35 30 255 tf i 260 240 30 25 210 280 VCE = 480V 25 400 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 20 = 18A RG - Ohms RG = 5Ω , VGE = 15V 15 C 100 300 80 = 72A 120 0 125 td(off) - - - - 160 C 160 I 240 200 800 TJ = 125ºC, VGE = 15V VCE = 480V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 75 td(off) - - - - TJ - Degrees Centigrade tfi 70 t d(off) - Nanoseconds VCE = 480V 4 25 65 900 tfi 220 5 VGE = 15V t f i - Nanoseconds Eon 60 240 6 RG = 5Ω , 55 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 6 Eoff 50 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 5 45 IXGH56N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 130 I C = 72A, 36A, 18A 80 80 70 90 60 I 70 C = 36A, 18A 50 30 24 22 20 10 25 30 35 40 45 50 30 26 20 20 VCE = 480V 40 30 15 32 TJ = 25ºC, 125ºC 28 30 10 td(on) - - - - RG = 5Ω , VGE = 15V 50 40 5 tri 60 50 10 34 t d(on) - Nanoseconds 70 t d(on) - Nanoseconds VCE = 480V 110 t r i - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 90 t r i - Nanoseconds 150 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 20 15 RG - Ohms 20 25 30 35 40 45 50 55 60 65 70 75 IC - Amperes 80 34 70 32 I C = 72A 60 tri 50 30 td(on) - - - - 28 RG = 5Ω , VGE = 15V 40 VCE = 480V 26 I C = 36A 30 24 20 22 I 10 25 35 45 55 65 75 85 C t d(on) - Nanoseconds t r i - Nanoseconds Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature = 18A 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_56N60B3(65)5-05-08-B