IXYS IXGK72N60B3H1

Preliminary Technical Information
IXGK72N60B3H1
IXGX72N60B3H1
GenX3TM 600V IGBT
with Diode
VCES
IC110
VCE(sat)
tfi(typ)
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
=
=
≤£
=
600V
72A
1.8V
92ns
TO-264 (IXGK)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
ICM
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600V
PC
TC = 25°C
72
A
450
A
ICM = 240
A
C
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
1.13 / 10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
Md
FC
Mounting torque (TO-264)
Mounting force (PLUS247)
TL
Maximum lead temperature for soldering
300
°C
TSOLD
1.6mm (0.062 in.) from case for 10s
260
°C
Weight
TO-264
PLUS247
10
6
g
g
(TAB)
E
PLUS247 (IXGX)
G
G
540
TJ
G
CD
TAB
ES
G = Gate
E = Emitter
C
= Collector
TAB = Collector
Features
z
z
z
z
Optimized for low conduction and
switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
Symbol
Test Conditions
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
3.0
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
IC = 120A
1.50
1.75
z
z
5.0
V
300
5
μA
mA
z
±100
nA
z
1.80
V
Applications
z
z
z
z
z
z
© 2008 IXYS CORPORATION, All rights reserved
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS99869A(06/08)
IXGK72N60B3H1
IXGX72N60B3H1
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Min.
IC = 50A, VCE = 10V, Note 1
Characteristic Values
Typ.
Max.
45
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
IC = 60A, VGE = 15V, VCE = 0.5 • VCES
76
S
6800
575
80
pF
pF
pF
225
40
82
nC
nC
nC
31
ns
33
1.4
ns
mJ
td(on)
tri
Eon
Inductive load, TJ = 25°°C
IC = 50A, VGE = 15V
152
240
ns
92
150
ns
Eoff
1.0
2.0
mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
29
34
2.7
228
142
2.2
ns
ns
mJ
ns
ns
mJ
0.15
0.23 °C/W
°C/W
td(off)
tfi
VCE = 480V, RG = 3Ω
Inductive load, TJ = 125°°C
IC = 50A,VGE = 15V
VCE = 480V,RG = 3Ω
RthJC
RthCS
Reverse Diode (FRED)
Symbol
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Test Conditions
VF
IF = 60A, VGE = 0V, Note 1
IRM
IF = 60A, VGE = 0V,
-diF/dt = 200A/μs, VR = 300V
trr
TJ = 150°C
1.6
1.4
2.0
1.8
TJ = 100°C
8.3
A
140
ns
DIM
INCHES
MIN
A
A1
b
b1
b2
c
D
E
e
J
K
L
L1
ØP
Q
Q1
ØR
ØR1
S
0.185
0.102
0.037
0.087
0.110
0.017
1.007
0.760
.215 BSC
0.000
0.000
0.779
0.087
0.122
0.240
0.330
0.155
0.085
0.243
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
0.209
0.118
0.055
0.102
0.126
0.029
1.047
0.799
0.010
0.010
0.842
0.102
0.138
0.256
0.346
0.187
0.093
0.253
MILLIMETERS
MIN
MAX
4.70
2.59
0.94
2.21
2.79
0.43
25.58
19.30
5.46 BSC
0.00
0.00
19.79
2.21
3.10
6.10
8.38
3.94
2.16
6.17
5.31
3.00
1.40
2.59
3.20
0.74
26.59
20.29
0.25
0.25
21.39
2.59
3.51
6.50
8.79
4.75
2.36
6.43
PLUS247TM (IXGX) Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
MAX
V
V
0.3 °C/W
RthJC
TO-264 (IXGK) Outline
6,404,065 B1
6,534,343
6,583,505
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
330
VGE = 15V
13V
11V
100
270
9V
240
80
60
IC - Amperes
IC - Amperes
VGE = 15V
13V
11V
300
7V
40
210
9V
180
150
120
90
7V
60
20
30
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
2.4
1
2
VCE(sat) - Normalized
IC - Amperes
6
7
8
125
150
7.5
8.0
VGE = 15V
1.2
80
60
7V
40
20
I
C
= 120A
I
C
= 60A
I
C
= 30A
1.1
1.0
0.9
0.8
5V
0.7
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
2.4
-25
0
VCE - Volts
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
180
4.5
TJ = 25ºC
4.0
C
3.5
160
= 120A
60A
30A
140
IC - Amperes
I
VCE - Volts
5
1.3
VGE = 15V
13V
11V
9V
100
4
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
120
3
VCE - Volts
VCE - Volts
3.0
2.5
120
100
80
TJ = 125ºC
25ºC
- 40ºC
60
2.0
40
1.5
20
1.0
0
5
6
7
8
9
10
11
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
130
16
120
TJ = - 40ºC
25ºC
125ºC
100
90
g f s - Siemens
VCE = 300V
14
110
I C = 60A
I G = 10mA
12
VGE - Volts
80
70
60
50
10
8
6
40
4
30
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
IC - Amperes
Fig. 9. Capacitance
120
140
160
180
200
220
240
Fig. 10. Reverse-Bias Safe Operating Area
280
10,000
Cies
240
200
1,000
IC - Amperes
Capacitance - PicoFarads
100
QG - NanoCoulombs
Coes
100
160
120
80
Cres
40
f = 1 MHz
0
100
10
0
5
10
15
20
25
30
35
40
TJ = 125ºC
RG = 3Ω
dV / dt < 10V / ns
200
300
VCE - Volts
400
500
600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
8
9
7
7
8
6
=100A
7
5
TJ = 125ºC , VGE = 15V
I C = 50A
VCE = 480V
3
2
4
1
5
10
15
20
25
30
35
40
45
50
TJ = 125ºC
4
4
3
3
TJ = 25ºC
20
55
30
40
50
7
---I C = 50A
VCE = 480V
2
3
- MilliJoules
Eon
t f - Nanoseconds
on
4
2
1
35
45
55
65
75
85
95
105
115
C
= 100A
180
850
160
I
C
140
550
I
C
0
5
10
15
t f - Nanoseconds
220
180
110
160
TJ = 25ºC
70
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
55
245
175
70
50
200
130
60
45
235
190
50
100
40
260
150
40
35
220
205
VCE = 480V
30
30
80
90
230
I
C
= 25A, 50A, 100A
160
215
140
200
120
185
100
145
80
130
100
60
tr
td(off) - - - -
RG = 3Ω , VGE = 15V
170
155
VCE = 480V
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
140
125
t d(off) - Nanoseconds
RG = 3Ω , VGE = 15V
20
25
250
t d(off) - Nanoseconds
td(off) - - - -
90
20
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
t f - Nanoseconds
TJ = 125ºC
170
250
VCE = 480V
RG - Ohms
230
tf
400
td(off) - - - -
TJ = 125ºC, VGE = 15V
80
0
125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
190
tf
= 25A
TJ - Degrees Centigrade
210
700
= 50A
100
I C = 25A
25
1150
1000
I
120
1
0
= 25A, 50A, 100A
200
5
4
C
t d(off) - Nanoseconds
= 100A
RG = 3Ω , VGE = 15V
0
100
90
1300
I
220
6
Eoff
80
240
E
Eoff - MilliJoules
6
3
70
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
7
C
60
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
I
2
1
RG - Ohms
5
5
0
1
0
VCE = 480V
5
1
2
0
6
2
3
I C = 25A
----
- MilliJoules
---
- MilliJoules
4
Eon
RG = 3Ω , VGE = 15V
on
6
Eon -
Eoff
Eoff
E
5
on
E
Eoff - MilliJoules
6
C
Eoff - MilliJoules
I
7
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
170
140
150
VCE = 480V
95
90
80
70
65
I
50
C
= 50A
I
C
0
5
10
15
20
25
30
35
40
45
50
VCE = 480V
70
32
TJ = 25ºC, 125ºC
60
31
50
25ºC < TJ < 125ºC
30
29
30
28
35
20
27
20
10
= 25A
10
33
RG = 3Ω , VGE = 15V
40
50
30
td(on) - - - -
t d(on) - Nanoseconds
110
= 100A
- Nanoseconds
110
C
d(on)
I
34
tr
80
t
t r - Nanoseconds
125
TJ = 125ºC, VGE = 15V
130
90
td(on) - - - -
t r - Nanoseconds
tr
55
20
RG - Ohms
30
40
50
60
70
80
90
26
100
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
100
35
90
34
33
I C = 100A
tr
70
td(on) - - - -
RG = 3Ω , VGE = 15V
60
VCE = 480V
50
32
31
30
I C = 50A
40
29
30
28
20
t d(on) - Nanoseconds
t r - Nanoseconds
80
27
I
10
C
= 25A
26
0
25
35
45
55
65
75
85
95
105
115
25
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_72N60B3(76)06-26-08-C
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 21
Fig. 22
Fig. 24
Fig. 25
Fig. 23
Z(th)JC - [ ºC / W ]
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
s]
Pulse Width [[ms]
Fig. 26 Maximum transient thermal impedance junction to case (for diode)
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: G_72N60B3(76)06-26-08-C