IXYS IXTH6N80

VDSS
Standard
Power MOSFET
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
ID25
6A
6A
RDS(on)
1.8 Ω
1.4 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
V GS
Continuous
±20
V
VGSM
Transient
±30
V
I D25
TC = 25°C
6
A
I DM
TC = 25°C, pulse width limited by TJM
24
A
PD
TC = 25°C
180
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
°C
300
Features
●
●
●
●
●
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
●
VDSS
VGS = 0 V, ID = 3 mA
VGS(th)
V DS = VGS, ID = 250 µA
I GSS
VGS = ±20 VDC, VDS = 0
I DSS
V DS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
800
2
TJ = 25°C
TJ = 125°C
6N80
6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5
V
±100
nA
250
1
µA
mA
1.8
1.4
Ω
Ω
●
●
●
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
●
●
●
IXYS reserves the right to change limits, test conditions, and dimensions.
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXTH 6N80
IXTM 6N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 • ID25, pulse test
Ciss
6
S
2800
pF
250
pF
Crss
100
pF
td(on)
35
100
ns
40
110
ns
100
200
ns
60
100
ns
110
130
nC
15
30
nC
50
70
nC
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
td(off)
RG = 2 Ω, (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
RthJC
0.7
0.25
RthCK
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
I SM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
900
6
A
24
A
1.5
V
IXTH 6N80A
IXTM 6N80A
TO-247 AD (IXTH) Outline
1
2
Terminals: 1 - Gate
3 - Source
3
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
2.87
3.12
b2
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-204AA (IXTM) Outline
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Millimeter
Min. Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
L
7.93
∅p
3.84
4.19
∅p1 3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
IXTH 6N80
IXTM 6N80
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
9
8
TJ = 25°C
7
ID - Amperes
7
ID - Amperes
9
7V
V GS = 10V
8
6
5
4
3
6V
2
6
5
TJ = 25°C
4
3
2
1
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
0
0
5
10
15
20
25
30
VGS - Volts
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
3.0
2.50
T J = 25°C
2.25
RDS(on) - Normalized
2.8
RDS(on) - Ohms
IXTH 6N80A
IXTM6N80A
2.6
2.4
V GS = 10V
2.2
VGS = 15V
2.0
2.00
1.75
1.50
ID = 2.5A
1.25
1.00
0.75
1.8
0
2
4
6
8
0.50
-50
10
-25
0
ID - Amperes
25
50
75
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
7
1.2
6
1.1
6N80A
5
6N80
3
2
1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0
-50
BV/VG(th) - Normalized
ID - Amperes
BV CES
4
100 125 150
-25
0
25
50
75
100 125 150
TC - Degrees C
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXTH 6N80
IXTM 6N80
Fig.7 Gate Charge Characteristic Curve
IXTH 6N80A
IXTM6N80A
Fig.8 Forward Bias Safe Operating Area
10
10us
9 V DS = 500V
ID = 3.0A
IG = 10mA
8
10 Limited by R
DS(on)
ID - Amperes
VGE - Volts
7
6
5
4
3
100us
1ms
1
10ms
100ms
2
1
0
0.1
0
10
20
30
40
50
60
70
80
1
10
100
Gate Charge - nCoulombs
VDS - Volts
Fig.10 Source Current vs. Source
to Drain Voltage
9
Ciss
8
7
ID - Amperes
Capacitance - pF
Fig.9 Capacitance Curves
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
1000
f = 1 MHz
VDS = 25V
6
5
4
TJ = 125°C
3
T J = 25°C
2
Coss
1
Crss
0
5
10
0
15
20
25
0.0
0.2
VCE - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VDS - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Time - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
0.1
1
10