This is an advance copy of the dated document. The final document after review by the Defense Automated Printing Service may be slightly different in format. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 September 1999 INCH-POUND MIL-PRF-19500/374D 29 June 1999 SUPERSEDING MIL-S-19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die. 1.2 Physical dimensions. See 3.3 and figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998 and 2N3999, 3 lead stud package), figure 3, and figure 4 (JANHC and JANKC). 1.3 Maximum ratings. PT 1/ TA = +25°C PT 2/ TC = +100°C VEBO VCBO VCEO IB IC IC 3/ TSTG and TJ RΘJC W W V dc V dc V dc A dc A dc A dc 2 30 8 100 80 0.5 5.0 10 °C -65 to +200 °C/W 3.33 1/ Derate linearly, 11.4 mW/°C for TA ≥ +25°C. 2/ Derate linearly, 300 mW/°C for TC ≥ +100°C. 3/ This value applies for tp ≤ 1 ms, duty cycle ≤ 50%. 1.4 Primary electrical characteristics at TC = +25°C. Limit |hfe| VCE = 5 V dc; IC = 1 A dc; hFE2 1/ VCE = 2 V dc; IC = 1 A dc VBE (sat) 2 1/ IC = 5 A dc; IB = 500 mA dc VCE (sat) 2 1/ IC = 5 A dc; IB = 500 mA dc 100 kHz ≤ f ≤ 1 MHz f = 10 MHz Minimum 2N3996 2N3997 2N3998 2N3999 40 Maximum 120 1/ Pulsed (see 4.5.1). Cobo VCB = 10 V dc IE = 0 V dc V dc 80 3 --- --- pF --- 240 12 1.6 2.0 150 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/374D FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches Min CH A1 CD .345 Millimeters Max Min Max .400 8.76 10.16 .250 6.35 3 .318 .380 CD1 .370 .437 9.40 11.10 HF .424 .437 10.77 11.10 PS .180 .215 4.57 5.46 PS1 HT .080 .110 2.03 2.79 5 .090 .140 2.29 3.56 2,6 OAH .575 .675 14.61 17.15 1 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU 8.08 Notes .078 9.65 1.98 φT .040 .065 1.02 1.65 φT1 .040 .065 1.02 1.65 SD .190-32 UNF-2A 3 5 7 4 8 Z .002 0.05 Z1 .006 0.15 NOTES: 1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case. 2. Chamfer or undercut on one or both ends of hexagonal portion is optional. 3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1. 4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected to the case. The other three terminals shall be electrically isolated from the case. 5. Angular orientation of terminals with respect to hexagon is optional. 6. HT dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I. 9. Dimensions are in inches. 10. Metric equivalents are giving for general information only and are based upon 1.00 inch = 25.4 mm. 11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. 3 MIL-PRF-19500/374D FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999. 4 MIL-PRF-19500/374D Dimensions Symbol CH Inches Millimeters Min Max Min Max .345 .400 8.76 10.16 .250 Notes A1 CD1 .318 .380 8.08 9.65 CD .370 .437 9.40 11.10 HF .424 .437 10.77 11.10 PS .125 .165 3.18 4.19 4,7,8 PS1 PS2 .110 .145 2.79 3.68 4,7 .090 .140 2.29 3.56 4,7,8 PS3 HT .185 .215 4.70 5.46 4,7,8 .090 .140 2.29 3.56 OAH .575 .675 14.61 17.15 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU .078 φT .040 φT1 .040 SD 6.35 1.98 .065 1.02 1.65 .065 1.02 1.65 .190-32 UNF-2A 5 9 3 NOTES: 1. 2. Metric equivalents are given for general information only and are based upon 1.00 inch = 25.4 mm. Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90° option is used. 3. SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud. 7. Terminal spacing measured at the base seat only. 8. Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals. Maximum unthreaded dimension. 9. 10. This dimension applies to the location of the center line of the terminals. 11. A 90° angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic outline 12. except PS, PS1, and the 120°lead angle apply to this option. Terminal 1, emitter; terminal 2, base; terminal 3, collector. 13. 14. A slight chamfer or undercut on one or both ends of the hexagonal is optional. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 - Continued. 5 MIL-PRF-19500/374D NOTES: 1. Chip size ............................ 82 X 82 mils 2. Chip thickness ................... 6 to 12 mils 3. Top metal ........................... Aluminum 25,000 Å minimum, 30,000 Å nominal 4. Back metal ......................... Gold 2,500 Å minimum, 3,000 Å nominal 5. Backside ............................ Collector 6. Bonding pad....................... B = 8 x 60 mils, E = 8 x 50 mils FIGURE 3. JANHC and JANKC (A-versions) die dimensions. 6 MIL-PRF-19500/374D NOTES: 1. Chip size .......................... 100 X 100 mils 2. Chip thickness ................. 6 to 12 mils 3. Top metal ......................... Aluminum 25,000 Å minimum, 33,000 Å nominal 4. Back metal ....................... Gold 1,500 Å minimum, 2,500 Å nominal 5. Backside .......................... Collector 6. Bonding pad..................... 12 x 30 mils FIGURE 4. JANHC and JANKC (B-versions) die dimensions. 7 MIL-PRF-19500/374D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500, and as follows. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MILPRF-19500, and figures 1, 2, 3, 4, herein. 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. 3.4 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer, the marking of the country of origin may be omitted from the body of the transistor. 3.5 Electrical performance characteristics. specified in 1.3, 1.4, and table I. Unless otherwise specified herein, the electrical performance characteristics are as 8 MIL-PRF-19500/374D 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.2 ). 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with appendix G of MIL-PRF19500. This testing may be performed utilizing a TO-5 package in lieu of the TO-59 or the TO-11. 4.3 Screening (JANS, JANTXV, JANTX levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV) and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of Measurement MIL-PRF-19500) 3c 1/ JANS level JANTX and JANTXV levels Thermal impedance (see 4.5.5) Thermal impedance (see 4.5.5) 9 ICES1 and hFE2 ICES1 11 ICES1 and hFE2; ∆ICES1 = 100 percent of initial value or 100 nA dc, ICES1 and hFE2; ∆I CES1 = 100 percent of initial value or 100 nA dc; whichever is greater; whichever is greater. ∆hFE2 = +15 percent, -10 percent 12 13a See 4.3.1 See 4.3.1 Subgroups 2 and 3 of table I Subgroup 2 of table I herein, herein; ∆ICES1 = 100 percent of initial value or 100 nA dc, ∆ICES1 = 100 percent of initial value or 200 nA dc, whichever is greater; whichever is greater; ∆hFE2 = +20 percent, -10 percent ∆hFE2 = +15 percent, -10 percent 13b Insulation resistance Insulation resistance (terminal to (terminal to case) Method 1016 case) Method 1016 of MIL-STD-750 of MIL-STD-750 (types 2N3996 (types 2N3996 and 2N3997 only); and 2N3997 only); test test condition B (short collector, condition B (short collector, emitter, and base terminals together); R = 109 Ω minimum. emitter, and base terminals 9 together); Riso = 10 Ω minimum 1/ May be performed anytime before screen 9. 9 iso MIL-PRF-19500/374D 4.3.1 Power burn-in conditions. Power burn-in conditions for all levels are as follows: VCE = 25 V dc, ±5 V dc; TJ = 187.5°C, ± 12.5°C; TA = 35°C. max 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix G of MIL-PRF19500. Test limits and conditions shall be chosen by the supplier to demonstrate compliance with electrical characteristics specified in table I herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCE ≥ 10 V dc, 2,000 cycles. B5 1027 VCE = 20 V dc ±1.0 V dc; 96 hours. Adjusted as required by the chosen TA to give an average lot TJ = 275°C. B7 3053 Load condition C (unclamped inductive) (see figure 6), TA = 25°C ±3°C, duty cycle ≤ 10 percent; RS = 0.1Ω. TEST 1 - tp = 640 µs; RBB1 = 39Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 = 0; VCC = 10 V dc; IC = 4.3 A dc; L = 1 mH (0.5Ω, 5A) (Tower #7870 or equivalent). TEST 2 - tp = 2.88 mS; RBB1 = 120Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 = 0; VCC = 10 V dc; IC = 1.4 A dc; L = 10 mH (0.11 Ω, 12.5A) (Stancor C-2688 or equivalent) B7 3053 Safe operating area (switching) (destructive); Load condition B (clamped inductive) TA = 25°C; IB = 0.5 A dc, IC = 5 A dc; VCC = 55 V dc, L = 1.0 mH, VBB2 = 3.0 V, RBB2 = 20 Ω. 10 MIL-PRF-19500/374D 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 For solder die attach; VCE ≥ 10 V dc, 2000 cycles B3 1026 For eutectic die attach TA = 35°C max, PT adjusted to achieve TJ = 175°C min, VCE ≥ 10 V dc B5 --- Not applicable. B7 3053 Load condition C (unclamped inductive) (see figure 6), TA = 25°C, duty cycle ≤ RS = 0.1 Ω. 10 percent; TEST 1 - tp = 640 µs; RBB1 = 39Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 = 0; VCC = 10 V dc; IC = 4.3 A dc; L = 1 mH (0.5 Ω, 5A) (Tower #7870 or equivalent). TEST 2 - tp = 2.88 mS; RBB1 = 120Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 = 0; VCC = 10 V dc; IC = 1.4 A dc; L = 10 mH (0.11 Ω, 12.5A) (Stancor C-2688 or equivalent) B7 3053 Safe operating area (switching) (destructive); Load condition B (clamped inductive) TA = 25°C; IB = 0.5 A dc, IC = 5 A dc; VCC = 55 V dc, L = 1.0 mH, VBB2 = 3.0 V, RBB2 = 20 Ω. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Test condition A; weight = 7 pounds ±5 ounce, application time = 15 s, tubulated leads only. Test condition D2; Torque = 15 inch-pound; application time = 15 s. Test condition D1; torque = 8 in-oz; application time = 15 s; tubulated leads only. C3 1037 For solder die attach; VCE ≥ 10 V dc, 6000 cycles C3 1026 For eutectic die attach TA = 35°C max, PT adjusted to achieve TJ = 175°C min, VCE ≥ 10 V dc 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Case-temperature control for hfe test. To maintain the case temperature at less than +40°C for this test, the specified dc collector current should be applied for not longer than 10 seconds without employing a heat sink. 4.5.3 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted as a case temperature (TC) of +25°C. 11 MIL-PRF-19500/374D 4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 0.833 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be 25°C ≤ TR ≤ 75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to case. f. Maximum limit of RθJC shall be 3.33°C /W. 4.5.5 Thermal impedance ZθJX measurements for screening. The ∆VBE measurements shall be performed in accordance ____________________________________________ with MIL-STD-750, method 3131. The maximum limit and conditions for ∆VBE in screening (see table II of MIL-PRF-19500) shall be derived by each vendor by means of process control of actual measurements which characterizes the die attach process. When three lot date codes have exhibited control, the data from these three lots will be used to establish a fixed screening limit (not to exceed the group A limit). Once a fixed limit has been established, monitor all future sealing lots using a sample from each lot to be plotted on the applicable X and R chart. a. IM measure current .................................................. 10 mA. b. IH forward heating current ....................................... 1.0 A to 3.0 A. c. tH heating time.......................................................... 100 ms max d. tMS measurement delay time.................................... 70 µs max e. VH forward heating voltage ....................................... 10 V minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 3.3°C/W. 4.5.5.1 Thermal impedance (ZθJX measurements) for initial qualification or requalification. The ZθJX measurements shall _________________________________________________________________ be performed in accordance with MIL-STD-750. Method 3131 (read and record data ZθJX ) derived conditions limits and thermal response curve shall be supplied to the qualifying activity on the qualification lot prior to qualification approval. 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 12 MIL-PRF-19500/374D TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical 2071 examination Subgroup 2 3.3 °C /W Thermal impedance 3131 See 4.5.5 ZθJX Breakdown voltage, 3001 Bias condition D, IC = 10 µA dc V(BR)CBO 100 V dc V(BR)CEO 80 V dc collector to base Breakdown voltage, IB = 0 3011 collector to emitter Collector to emitter pulsed (see 4.5.1) 3041 cutoff current Collector to emitter 3041 3061 3061 3066 3066 voltage (saturated) ICEO 10 µA dc Bias condition D, VEB = 5 V dc, IEBO1 200 nA dc Bias condition D, VEB = 8 V dc, IEBO2 10 µA dc Test condition A, IC = 1 A dc; 1.2 V dc VBE(sat)2 1.6 V dc VBE(sat)1 0.6 Test condition A, IC = 5 A dc; IB = 0.5 A dc, pulsed (see 4.5.1) 3071 IC = 1 A dc; IB = 0.1 A dc, pulsed (see 4.5.1) VCE(sat)1 0.25 V dc 3071 IC = 5 A dc; IB = 0.5 A dc, pulsed (see 4.5.1) VCE(sat)2 2 V dc voltage (saturated) Collector to emitter Bias condition D, VCE = 60 V dc, IB = 0.1 A dc, pulsed (see 4.5.1) (saturated) Collector to emitter nA dc IC = 0 | (saturated) Base-emitter voltage 200 IC = 0 cutoff current Base-emitter voltage ICES1 IB = 0 cutoff current Emitter to base Bias condition C, VCE = 80 V dc, VBE = 0 cutoff current Emitter to base Bias condition D, IC = 50 mA dc See footnote at end of table. 13 MIL-PRF-19500/374D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward-current 3076 transfer ratio VCE = 2 V dc; IC = 50 mA dc, pulsed (see 4.5.1) hFE1 2N3996, 2N3998 30 2N3997, 2N3999 60 Forward-current 3076 transfer ratio VCE = 2 V dc; IC = 1 A dc, pulsed (see 4.5.1) hFE2 2N3996, 2N3998 40 120 2N3997, 2N3999 80 240 Forward-current 3076 transfer ratio VCE = 5 V dc; IC = 5 A dc, pulsed (see 4.5.1) hFE3 2N3996, 2N3998 15 2N3997, 2N3999 20 Subgroup 3 High temperature TC = +150°C operation Collector to emitter 3041 cutoff current Bias Condition C, VCE = 80 V dc, ICES2 50 VBE = 0 Low-temperature TC = -55°C operation Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 1 A dc, pulsed (see 4.5.1) hFE4 2N3996, 2N3998 10 2N3997, 2N3999 20 See footnote at end of table. 14 µA dc MIL-PRF-19500/374D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 Open circuit output 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 3306 VCE = 5 V dc; IC = 1 A dc; f = 10 MHz, (see 4.5.2) hfe pulse delay time See figure 5 ns See figure 5 td tr 100 pulse rise time 240 ns pulse storage time See figure 5 1.4 µs pulse fall time See figure 5 ts tf .3 µs ton toff td + tr ts + tf ton toff capacitance Magnitude of common emitter small-signal 150 3 pF 12 short-circuit forward current transfer ratio Switching parameters: 2N3996 and 2N3998 .3 µs 1.5 µs td tr 100 ns 240 ns 1.75 µs .3 µs .3 µs 2.0 µs 2N3997 and 2N3999 pulse delay time See figure 5 pulse rise time See figure 5 pulse storage time See figure 5 pulse fall time See figure 5 ts tf ton toff td + tr ts + tf ton toff Subgroup 5 Safe operating 3051 TC = 100°C; power application area (DC) time = 1.0 sec. (see figure 6) Test 1 VCE = 80 V dc; IC = .080 A dc VCE = 20 V dc; IC = 1.5 A dc Test 2 See footnote at end of table. 15 MIL-PRF-19500/374D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 - continued Safe operating area (clamped inductive) (See figures 8 and 9); (clamped inductive load) TA = 25°C; IB = 0.5 A dc; IC = 5 A dc; VCC = 15 V dc; Load condition C Electrical measurements See subgroups 2 herein. Subgroup 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 16 Symbol Limits Min Unit Max MIL-PRF-19500/374D TABLE II. Groups A, B, and C delta measurements. 1/ 2/ Step Inspection MIL-STD-750 Method 1. Forward-current 3076 transfer ratio Symbol Conditions VCE = 2 V dc IC = 1 A dc Limits Min Unit Max ∆hFE2 1/ ±20 percent change from initial reading. ∆ICEO 1/ 100 percent of pulsed (see 4.5.1) 2. Collector to emitter 3041 cutoff current Bias condition D; VCE = 60 V dc IB = 0 initial value or 100 nA dc, whichever is greater. 3. Collector to emitter 3071 voltage (saturated) IC = 1 A dc IB = 0.1 A dc ∆VCE(SAT)1 ±50 percent mV dc change from pulsed (see 4.5.1) 1/ previously measured value. 4. Thermal impedance 3131 See 4.4.1 and 4.5.5 ∆ZθJX 3.3 °C/W 1/ The devices which exceed the group A limits for this test shall not be acceptable. 2/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroups 4 and 5, see table II herein, step 1 and 4. b. Subgroup 7, see table II herein, step 1. 3/ The delta measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, step 1 and 4. b. Subgroup 6, see table II herein, step 2. c. Subgroup 7, see table II herein, step 1 4/ The electrical measurements for table V of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, step 3 for JANS. b. Subgroup 6, see table II herein, step 1; 2 and 4 for JANS and steps 1 and 4 for JAN, JANTX and JANTXV. 17 MIL-PRF-19500/374D NOTES: 1. The input waveform is supplied by a generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns, Zout = 50 Ω, pW = 2 µs, duty cycle ≤ 2 percent. 2. Waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, Rin ≥ 10 MΩ, Cin ≤ 11.5 pF. 3. Resistors must be non-inductive types. 4. The d-c power supplies may require additional by-passing in order to minimize ringing. FIGURE 5. Pulse response test circuit. 18 MIL-PRF-19500/374D FIGURE 6. Maximum safe operating area graph (dc). 19 MIL-PRF-19500/374D FIGURE 7. Safe operating area for switching between saturation and cutoff - unclamped inductive load. 20 MIL-PRF-19500/374D Procedure: 1. With switch S1 closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached. 3. Perform specified end point test. FIGURE 8. Clamped inductive sweep test circuit. FIGURE 9. Safe operating area for switching between saturation and cutoff - clamped inductive load. 21 MIL-PRF-19500/374D 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. Lead finish (see 3.3.1). c. Type designation and product assurance level. d. Packaging requirements (see 5.1). 6.3 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N3996) will be identified on the QPL. JANHC and JANKC ordering information Pin Manufacturer 1/ 33178 34156 2N3996 JANHCA2N3996 JANHCB2N3996 2N3997 JANHCA2N3997 JANHCB2N3997 2N3998 JANHCA2N3998 JANHCB2N3998 2N3999 JANHCA2N3999 JANHCB2N3999 1/ For JANKC level, replace the JANHC prefix with JANKC. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC Review activities: Army - AV Air Force – 99 (Project 5961-2166) 22 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER 2. DOCUMENT DATE (YYYYMMDD) MIL-PRF-19500/374D 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First Middle Initial) c. ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. NAME Alan Barone c. ADDRESS (Include Zip Code) DSCC-VAC 3900 East Broad Street Columbus, Ohio 43216-5000 DD Form 1426, FEB 1999 (EG) b. ORGANIZATION d. TELEPHONE (Include Area Code) (1) Commercial (2) DSN (If applicable) 7. DATE SUBMITTED (YYYYMMDD) b. TELEPHONE (Include Area Code (1) Commercial (2) DSN 614-692-0510 850-0510 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533 Fort Belvoir, Virginia 22060-6221 Telephone (703)767-6888 DSN 427-6888 PREVIOUS EDITIONS ARE OBSOLETE. WHS/DIOR, Feb 99