This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 October 1998 INCH-POUND MIL-PRF-19500/433E 1 July 1998 SUPERSEDING MIL-S-19500/433D 1 December 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N4399 AND 2N5745 JAN, JANTX, JANTXV, AND JANS This Specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (TO - 3). 1.3 Maximum ratings. RθJC = 0.875°C/W, RθJA = 35°C/W. PT 1/ TA = +25°C PT 2/ TC = +100°C VCBO VCEO VEBO IB IC TJ and TSTG W W V dc V dc V dc A dc A dc °C 5 5 115 115 60 80 60 80 5 5 7.5 7.5 30 20 -55 to +200 -55 to +200 2N4399 2N5745 1/ Derate linearly 28.57 mW/°C above TA = +25°C. 2/ Derate linearly 1.15 W/°C above TC = +100°C. 1.4 Primary electrical characteristics. Switching HFE2 1/ hFE2 1/ |hFE| VCE(sat)1 1/ VBE(sat)1 1/ Cobo VCE = 2 V dc IC = 15 A dc VCE = 2 V dc IC = 10 A dc VCE = 10 V dc IC = 1 A dc f = 1 MHz IC = 15 A dc IB = 1.5 A dc IC = 15 A dc IB = 1.5 A dc VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz ton toff 2N4399 2N5745 25 Min Max 2N4399 V dc 2N5745 V dc 2N4399 2N5745 pF µs µs V dc 4 40 1.0 1.5 1.8 2.0 1,000 1.2 2.5 25 |1/ Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/433E 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2.1 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.4). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 2 MIL-PRF-19500/433E FIGURE 1. Physical dimensions TO-3. 3 MIL-PRF-19500/433E Dimensions Symbol Notes Inches Millimeters Min Max Min Max CD --- .875 --- 22.23 CH .270 .380 6.86 9.65 HT .060 .135 1.52 3.43 HR .495 .525 12.57 13.34 HR1 .131 .188 3.33 4.78 LD .038 .043 0.97 1.09 LL .312 .500 7.92 12.70 L1 --- .050 --- 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 2, 3 PS1 .205 .225 5.21 5.72 2, 3 S1 .655 .675 16.64 17.15 2 5 NOTES: 1. Dimensions are in inches. 2. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 3. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 4. Collector shall be electrically connected to the case. 5. LD applies between L1 and LL. Diameter is uncontrolled in L1. FIGURE 1. Physical dimensions. Continued. 4 MIL-PRF-19500/433E 4. VERIFICATION 4.1 Classification of and inspection. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (appendix E, table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 1/ Thermal response (see 4.3.2) Thermal response (see 4.3.2) 9 ICEX1 and hFE2 ICEX1 11 ICEX1 and hFE2 ICEX1 and hFE2; ∆ICEX1 ≤ 100 percent of initial value or 5 nA dc, whichever is greater. ∆ICEX1 ≤ 100 percent of initial value or 100 nA dc, whichever is greater. ∆hFE2 ≤ ± 15 percent of initial value 12 See 4.3.1 See 4.3.1 13 Subgroup 2 of table I herein; Subgroup 2 of table I herein; ∆ICEX1 ≤ 100 percent of initial value or 50 nA dc, whichever is greater; ∆ICEX1 ≤ 100 percent of initial value or 100 nA dc, whichever is greater; ∆hFE2 ≤ ± 15 percent of initial value ∆hFE2 ≤ ± 15 percent of initial value; 1/ This test shall be performed anytime after screen 3. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = 187.5 ± 12.5°C; VCE = 25 V dc; TA = room ambient as defined in the general requirements of MIL-STD-750. 4.3.2 Thermal response (∆VBE measurements). The∆VBE measurements shall be performed in accordance with MIL-STD-750., method 3131. The ∆VBE conditions (IH and VH) and maximum limit shall be derived by each vendor. The chosen ∆V BE measurement and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response curve shall be plotted. The chosen ∆VBE shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. One hundred percent Safe Operating Area (SOA) testing may be performed in lieu of thermal response testing herein provided that the appropriate conditions of temperature, time, current, and voltage to achieve die attach integrity are submitted to the qualifying activity. 5 MIL-PRF-19500/433E 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance appendix E, table V, MIL-PRF-19500 and herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (endpoints) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, appendix E, table VIa of MIL-PRF-19500. Subgroup B4 Method 1037 Conditions VCE = 20 V dc; PT = 5 W at TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on devices shall be permitted. B5 1027 VCB = 20 V dc; TA = +125°C ± 25°C for 96 hours; PT = 5 W at TA = +125°C or adjusted as required by the chosen TA to give an average lot TJ = +275°C. 4.4.2.2 Group B inspection, appendix E, table VIb of MIL-PRF-19500. Subgroup Method B3 1037 B5 3053 Conditions VCB = 20 V dc; ∆TJ between cycles ≥ +100°C. ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. Load condition C; (unclamped inductive load) (see figure 2); TC = +25°C; duty cycle ≤ 10 percent; Rs = .01Ω; tr = tf ≤ 500 ns. Test 1 - tp = 5 ms (vary to obtain IC); VBB2 = 0; RBB1 = 10Ω; L = 2 mH; VBB1 = 10 V dc; RBB2 = infinity; IC = 10 A dc; VCC = 15 V dc. Test 2 - tp = 5 ms (vary to obtain IC); VBB2 = 0; VBB1 = 10 V dc; RBB1 = 100Ω; L = 40 mH; RBB2 = infinity; IC = 1 A dc; VCC = 15 V dc. B5 3053 Clamped switching destructive; VCC = 55 V dc; TA = +25°C; L = 20 mH; (see figures 3 and 4) 2N4399 - clamped voltage = 60 V dc; IC = 30 A dc 2N5745 - clamped voltage = 80 V dc; IC = 20 A dc 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500, and as follows. Electrical measurements (endpoints) and delta requirements shall be in accordance with table I, subgroup 2 herein. 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup C6 Method 1037 Conditions VCB = 20 V dc; ∆TJ between cycles ≥ +100°C. ton = toff = 3 minutes minimum for 6,000 cycles. No heat sink or forced-air cooling on device shall be permitted. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 6 MIL-PRF-19500/433E 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. IM measurement ...................................... 10 mA dc. b. VCE measurement voltage ....................... 20 V dc. c. IH collector heating current ...................... 2.5 A (minimum). d. VH collector emitter heating voltage ......... 20 V (minimum). e. tH heating time ......................................... Steady-state (see MIL-STD-750, method 2131). f. tMD measurement delay time ................... 20 µs. g. tSW sample window time.......................... 10 µs maximum. 7 MIL-PRF-19500/433E TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method 2/ Limits Symbol Conditions Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Collector to base breakdown voltage 3011 Bias condition D; IC = 200 mA dc; pulsed (see. 4.5.1) V(BR)CEO 60 80 2N4399 2N5745 Collector to emitter cutoff current 3041 Bias condition D ICEO VCE = 60 V dc VCE = 80 V dc 2N4399 2N5745 Emitter-base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO Collector to emitter cutoff current 3041 Bias condition A; VBE = 1.5 V dc ICEX1 2N4399 2N5745 VCE = 60 V dc VCE = 80 V dc Base emitter saturated voltage 3066 Test condition A; IC = 10 A dc; IB = 1.0 A dc pulsed (see 4.5.1) VBE(sat)1 Base emitter saturated voltage 3066 Test condition A; ; IC = 15 A dc; IBE = 1.5 V dc, pulsed (see 4.5.1) VBE(sat)2 2N4399 2N5745 Collector to emitter saturated voltage 3071 Pulsed (see 4.5.1); IC = 5.0 A dc; IB = 0.5 A dc VCE(sat)1 Collector to emitter saturated voltage 3071 IC = 10 A dc; IB = 1.0 A dc; pulsed (see 4.5.1) VCE(sat)2 2N4399 2N5745 Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) See footnote at end of table. 8 hFE1 40 100 100 µA dc µA dc 5.0 µA dc 5.0 5.0 µA dc µA dc 1.7 V dc 1.8 2.0 V dc V dc 0.55 V dc 0.75 1.0 V dc V dc 425 MIL-PRF-19500/433E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method 2/ Limits Symbol Conditions Unit Min Max 15 15 60 60 Subgroup 2 - Continued Forward-current transfer ratio 3076 2N4399 2N5745 Forward-current transfer ratio VCE = 2 V dc; pulsed (see 4.5.1) hFE2 IC = 15 A dc IC = 10 A dc 3076 2N4399 2N5745 VCE = 5 V dc; pulsed (see 4.5.1) hFE3 5 5 IC = 30 A dc IC = 20 A dc Subgroup 3 High-temperature operation: Collector to emitter cutoff current TA = +150°C 3041 2N4399 2N5745 ICEX2 VCE = 60 V dc VCE = 80 V dc Low-temperature operation: Forward-current transfer ratio Bias condition A; ; VBE = 1.5 V dc 10 10 mA dc mA dc TA = -55°C 3076 2N4399 2N5745 VCE = 2 V dc; pulsed (see 4.5.1) hFE4 7 7 IC = 15 A dc IC = 10 A dc Subgroup 4 Pulse response transfer ratio 3251 Test condition A except test circuit and pulse requirement in accordance with figure 5. Pulse delay time See figure 5 td 0.15 µs dc Pulse rise time 2N4399 2N5745 See figure 5 tr 0.4 0.85 µs dc Pulse storage time See figure 5 ts 1.5 µs dc Pulse fall time See figure 5 tf 1.0 µs dc See footnote at end of table. 9 MIL-PRF-19500/433E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method 2/ Limits Symbol Conditions Unit Min Max 4 40 Subgroup 4 - Continued Magnitude of commonemitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 1.0 A dc; f = 1 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ = 1 MHz Cobo Small-signal short-circuit forward-current transfer ratio 3206 VCE = 10 V dc; IC = 1.0 A dc; f = 1.0 MHz 3051 TC = +25°C; t = 1 s; 1 cycle, (see figure 6) Subgroup 5 Safe operating area (dc operation) Test 1 (Both device type) 2N4399 2N5745 VCE = 6.67 V dc; IC = 30 A dc VCE = 10 V dc; IC = 20 A dc Test 2 (Both device types) VCE = 20 V dc; IC = 10 A dc Test 3 (Both device types) VCE = 40 V dc; IC = 3 A dc Test 4 (Both device type) 2N4399 2N5745 Electrical measurements VCE = 50 V dc; IC = 600 mA dc VCE = 60 V dc; IC = 600 mA dc See subgroup 2, herein for ICEX1 and hFE2 Subgroups 6 and 7 Not applicable For sampling plan see MIL-PRF 19500. 10 hfe 1,000 40 425 pF MIL-PRF-19500/433E FIGURE 2. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 11 MIL-PRF-19500/433E NOTES: 1. With switch S1 closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached. 3. Perform specified end-points tests. 4. L = 2.0 mH (2 each 1 mH, 50 A, .001Ω, Sanford Miller CK-50, or equivalent). FIGURE 3. Clamped inductive sweep test circuit. FIGURE 4. Safe operating area for switching between saturation and cutoff (clamped inductive load). 12 MIL-PRF-19500/433E NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 20 µs, tf ≤ 1µ:s, 10µs ≤ PW ≤ 100µs, ZOUT = 50Ω, duty cycle ≤ 2 percent. 2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 2 µs, ZIN ≥ 100 kΩ, CIN ≤ 12 pF. 3. Test circuit A for td and tr; test circuit B for ts and tf. FIGURE 5. Pulse response test circuit. 13 MIL-PRF-19500/433E FIGURE 6. Maximum safe operating area graph (continuous dc). 14 MIL-PRF-19500/433E 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-PRF-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 17 NASA - NA Preparing activity: DLA - CC (Project 5961-1969) Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 13, 19, 99 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/433E 2. DOCUMENT DATE (YYMMDD) 980701 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPES 2N4399 AND 2N5745 JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone c. ADDRESS: Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, OCT 89 b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 DSN 289-2340 Previous editions are obsolete 198/290