The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 April 2002. INCH-POUND MIL-PRF-19500/323H 28 January 2002 SUPERSEDING MIL-PRF-19500/323G 22 June 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figures 1 (similar to TO-18), 2 (surface mount), and 3 (die) herein. 1.3 Maximum ratings. PT (1) TA = +25°C VCBO VCEO VEBO IC TOP and TSTG RθJA (1) W V dc V dc V dc mA dc °C °C/W 0.36 60 60 5.0 200 -65 to +200 417 (1) Derate linearly 2.4 mW/°C above TA = +25°C. 1.4 Primary electrical characteristics. Limits hFE1 hFE3 (1) hFE4 (1) |hfe| VCE = 1.0 V dc IC = 0.1 mA dc VCE = 1.0 V dc IC = 10 mA dc VCE = 1.0 V dc IC = 50 mA dc f = 100 MHz VCE = 20 V dc; IC = 10 mA dc Min 2N3250A, AUB 2N3251A, AUB 40 80 Max Min Max Min 50 100 150 300 15 30 Max Min Max 2.5 3.0 9.0 9.0 (1) Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/323H 1.4 Primary electrical characteristics - Continued. Limits Min Max rb'CC VCE = 20 V dc IC = 10 mA dc f = 31.8 MHz VCE(SAT)1 IC = 10 mA dc IB = 1.0 mA dc Cobo VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz ton IC = 10 mA dc IB = 1.0 mA dc toff IC = 10 mA dc IB = 1.0 mA dc 2N3250A, AUB 2N3251A, AUB NF VCE = 5 V dc IC = .1 mA dc Rg = 1kΩ f = 100 Hz ps V dc pF ns ns ns dB 5 250 0.25 6 70 250 300 6 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/323H Dimensions Symbol Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.34 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP Notes 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7,. 8, 12 LU .016 .019 0.41 0.48 7, 8 1.27 7, 8 .050 L1 L2 .250 6.35 P .100 2.54 7, 8 Q .040 1.02 5 r .007 0.178 10 TL .028 .048 0.71 1.22 3, 4 TW .036 .046 0.91 1.17 3 α 45° TP NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 45° TP 6 Dimension are in inches. Metric equivalents are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions (similar to TO-18 ). 3 MIL-PRF-19500/323H Dimensions Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Millimeters Min Max 0.97 1.42 0.43 0.89 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.74 1.81 2.01 0.89 0.99 2.41 2.74 2.82 3.25 3.25 0.56 0.96 0.56 0.96 Max .056 .035 .024 .024 .024 .108 .079 .039 .108 .128 .128 .038 .038 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 4 MIL-PRF-19500/323H NOTES: 1. Chip size ...............................................15 x 19 mils ±1 mil. 2. Chip thickness ......................................10 ±1.5 mil. 3. Top metal ..............................................Aluminum 15,000Å minimum, 18,000Å nominal. 4. Back metal ............................................A. Gold 2,500Å minimum, 3,000Å nominal. B. Eutectic Mount – No Gold. 5. Backside ...............................................Collector. 6. Bonding pad..........................................B = 3 mils, E = 4 mils diameter. 7. Passivation ...........................................Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom. FIGURE 3. Physical dimensions, JANHCA and JANKCA die. 5 MIL-PRF-19500/323H 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IBEX - - - Base cutoff current (dc) with specified circuit between the collector and emitter. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-18), figure 2 (UB surface mount), and figure 3 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characterics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 6 MIL-PRF-19500/323H 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 hFE3, ICBO2 Not applicable 11 ICBO2; hFE3; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater, ∆hFE3 = 25 percent change from initial value ICBO2 and hFE3 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE3 = 25 percent change from initial value. Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE3 = 25 percent change from initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in 4.5 of MIL-STD-750; VCB = 10- 30 V dc (10 V dc for JANS); PT = 360 mW. NOTE: No heat sink or forced air cooling on the devices shall be permitted. * 4.3.2 Screening JANC. Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with the steps of table III herein as specified in the notes for table III. 7 MIL-PRF-19500/323H * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB = 10 V dc. B5 1027 NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample. VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum, sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. B6 3131 See 4.5.3 herein. 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup B3 Method Conditions 1027 VCB = 10 - 30 V dc; TA = room ambient as defined in the general requirements of MIL-STD-750. Power shall be applied to achieve TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of maximum rated PT as defined in 1.3. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with the steps of table III herein as specified in the notes for table III. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E, not applicable to surface mount. C5 3131 See 4.5.3. C6 1027 VCB = 10 - 30 V dc; TA = room ambient as defined in the general requirements of MIL-STD-750. Power shall be applied to achieve TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of maximum rated PT as defined in 1.3. 8 MIL-PRF-19500/323H * 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the slash sheet that did not request the performance of table II tests, the tests specified in table II herein must be performed to maintain qualification. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Collector - base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector-base terminals, and measuring the ac voltage drop (Veb) with a high impedance rf voltmeter across the emitter-base terminals. With f = 31.8 MHz used for the 1.0 V signal, the following computation applies; rb'Cc (ps) = 5 x Veb (millivolts), see figure 4. 4.5.3 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Minimum collector magnitude shall be 36 mA dc. b. Collector to emitter voltage magnitude shall be 10 V dc. c. Reference point temperature shall be +25°C ≤ TR ≤ +35°C. The chosen reference temperature shall be recorded before the test is started. d. Maximum RθJA limit shall be 417°C/W. 9 MIL-PRF-19500/323H TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Collector to base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO1 10 µA dc Emitter to base cutoff current 3026 Bias condition D; VEB = 5 V dc IEBO 10 µA dc Breakdown voltage collector - emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CE Collector - base cutoff current 3036 Bias condition D; VCB = 40 V dc ICBO2 20 nA dc Collector - emitter cutoff current 3041 Bias condition A; VBE = 3.0 V dc, VCE = 40 V dc ICEX1 20 nA dc Base cutoff current 3041 Bias condition A; VBE = 3.0 V dc; VCE = 40 V dc IBEX 50 nA dc Forward-current transfer ratio 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB 3076 VCE = 1.0 V dc; IC = 0.1 mA dc hFE1 Forward-current transfer ratio 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB 3076 Forward-current transfer ratio 3076 60 V dc O 40 80 VCE = 1.0 V dc; IC = 1.0 mA dc hFE2 45 90 VCE = 1.0 V dc; IC = 10 mA dc, pulsed (see 4.5.1) 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB See footnote at end of table. 10 hFE3 50 150 100 300 MIL-PRF-19500/323H TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued * Forward-current transfer ratio 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB 3076 VCE = 1.0 V dc; IC = 50 mA dc, pulsed (see 4.5.1) hFE4 15 30 Current gain linearity hFE 3 − hFE 1 hFE 3 x 100 hFE 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB 40 % 30 % Collector - emitter saturated voltage 3071 IC = 10 mA dc; IB = 1.0 mA dc VCE(SAT)1 0.25 V dc Collector - emitter saturated voltage 3071 IC = 50 mA dc; IB = 5.0 mA dc; pulsed (see 4.5.1) VCE(SAT)2 0.50 V dc Base - emitter saturated voltage 3066 Test condition A; IC = 10 mA dc; IB = 1.0 mA dc VBE(SAT)1 0.90 V dc Base - emitter saturated voltage 3066 Test condition A; IC = 50 mA dc; IB = 5.0 mA dc; pulsed (see 4.5.1) VBE(SAT)2 1.20 V dc ICEX2 20 µA dc 0.60 Subgroup 3 TA = +150°C High-temperature operation: Collector - emitter cutoff current 3041 TA = -55°C Low-temperature operation: Forward-current transfer ratio Bias condition A; VCE = 40 V dc; VBE = 3.0 V dc 3076 VCE = 1.0 V dc; IC = 1.0 mA dc 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB hFE5 20 40 See footnote at end of table. 11 MIL-PRF-19500/323H TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Unit Min Max 2N3250A, 2N3250AUB 50 200 2N3251A, 2N3251AUB 100 400 2.5 9.0 3.0 9.0 Subgroup 4 Small-signal short-circuit forward-current transfer ratio Magnitude of common emitter small-signal short-circuit forwardcurrent transfer ratio 3206 3306 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz VCE = 20 V dc; IC = 10 mA dc; f = 100 MHz hfe | hfe | 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0 100 kHz ≤ f ≤ 1 MHz Cobo 6 pF Input capacitance (output open-circuited) 3240 VEB = 1.0 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 8 pF VCE = 20 V dc; IC = 10 mA dc; f = 31.8 MHz; (see 4.5.2 and figure 4) rb'Cc 250 ps Collector - base time constant Noise figure 5 3246 VCE = 5.0 V dc; IC = 100 µA dc; Rg = 1 kΩ; f = 100 Hz NF 6 dB 3251 Test condition A; IC = 10 mA dc; IB1 = 1.0 mA dc; (see figure 5) ton 70 ns Pulse response: On-time See footnote at end of table. 12 MIL-PRF-19500/323H TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 4 - Continued Off time 3251 Test condition A; IC = 10 mA dc; IB1 = IB2 = 1.0 mA dc (see figure 6) toff 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB Small-signal open circuit reverse-voltage transfer ratio 3211 VCE = 10 V dc; IC = 1.0 mA dc; f = 1 kHz 250 ns 300 ns 10 x 10 20 x 10 1 6 kΩ 2 12 kΩ 4 40 µmhos 10 60 µmhos hre 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB Small-signal short circuit input impedance 3201 VCE = 10 V dc; IC = 1.0 mA dc; f = 1 kHz VCE = 10 V dc; IC = 1.0 mA dc; f = 1 kHz 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB 1/ For sampling plan, see MIL-PRF-19500. 13 -4 hie 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB Small-signal open circuit output admittance -4 hoe MIL-PRF-19500/323H TABLE II. Group E inspection (all quality levels) - for qualification only. MIL-STD-750 Inspection Method Qualification Conditions 45 devices c=0 Subgroup 1 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 herein. * Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements VCB = 10 V dc , 6,000 cycles, forced air cooling allowed on cooling cycle only. See group A, subgroup 2 herein. Subgroup 3 Not applicable Subgroup 4, 5, 6 and 7 Not applicable Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V. Condition B for devices < 400 V. 14 45 devices c=0 MIL-PRF-19500/323H TABLE III. Group B and group C delta measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Method Symbol Conditions Limits Min Unit Max 1. Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 10 mA dc; pulsed (see 4.5.1) ∆hFE3 ± 25 percent change from initial value. 2. Collector - base cutoff current 3036 Bias condition D; VCB = 40 V dc ∆ICBO2 100 percent of initial value or 5 nA dc, whichever is greater. 3. Collector - emitter voltage (saturated) 3071 IC = 50 mA dc; IB = 5.0 mA dc 1/ ∆VCE(Sat)2 50 mV dc change from initial value. The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table III herein, step 3. b. Subgroup 5, see table III herein, steps 1, 2, and 3. 2/ The delta measurements for table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows: Subgroups 3 and 6, see table III herein, step1. 3/ The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein, steps 1 and 2 (for JANS) and 1 (for JAN, JANTX, and JANTXV). 15 MIL-PRF-19500/323H Procedure: 1. Set signal generator to 31.8 MHz and connect to "IN" connector on test jig. 2. Connect low voltage dc power supplies as shown. A 1 K ohm resistor should be placed in series with the emitter power supply to prevent damage to transistors being tested. 3. Set collector supply for VCE = -20 V dc, and emitter supply for IC = -10 mA. 4. Connect RF voltmeter with unterminated probe adapter to "CAL" connector on test jig. Adjust signal generator until RF voltage is 1 volt (NOTE: Decade switching of voltmeter should be accurate from 1 mV to 3 volts. If not, input voltage may be set using voltage dividers, utilizing lower scales of the RF voltmeter. If this is done, the voltage dividers should be left in place when the voltmeter is removed, as they constitute a load on the input of the circuit. 5. Remove RF voltmeter from "CAL" connector and connect to "OUT" connector. Meter will now read rb'Cc as follows: Meter range full scale 3 mV 10 mV 30 mV .1 volt FIGURE 4. Collector-base time constant test circuit (an equivalent circuit may be used). 16 MIL-PRF-19500/323H NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 1.0 ns, duty cycle ≤ 2 percent, and the generator source Z shall be 50Ω. 2. Sampling oscilloscope: ZIN ≥ 100 kΩ; rise time(tr) ≤ .1 ns. FIGURE 5. Delay and rise time, test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 1.0 ns, duty cycle ≤ 2 percent, and the generator source Z shall be 50Ω. 2. Sampling oscilloscope: ZIN ≥ 100 kΩ; rise time (tr) ≤ .1 ns. FIGURE 6. Storage and fall time, test circuit. 17 MIL-PRF-19500/323H 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC/JANKC suppliers with the applicable letter version (example, JANHCA2N3250A) will be identified on the QML. JANC ordering information PIN Manufacturer 12498 2N3250A, AUB 2N3251A, AUB JANHCA2N3250A JANHCA2N3251A 2N3250A, AUB 2N3251A, AUB JANKCA2N3250A JANKCA2N3251A 18 MIL-PRF-19500/323H 6.5 Changes from previous issue. The margins of this specification are marked with an asterisk to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2532) Review activities: Army - AR, AV, MI, SM Navy - AS, MC Air Force - 19 19 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/323H 2. DOCUMENT DATE 28 January 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC Post Office Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99