Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction KBP A Low Forward Voltage Drop High Reliability B C + ~ ~ - High Current Capability High Surge Current Capability H Ideal for Printed Circuit Boards Mechanical Data: J Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting position: Any I E D G KBP Min. Max Dim 14.22 15.24 A B 11.68 10.67 C 11.68 12.70 D 4.57 5.08 3.60 4.10 E 2.16 2.67 G 12.70 H 0.88 0.76 J 1.52 I All Dimension in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC KBP 200-G KBP 201-G KBP 202-G KBP KBP KBP KBP 204-G 206-G 208-G 2010-G 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V UNIT VR VR(RMS) Io 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM half-sine-wave superimposed on rated load (JEDEC Method) 60 A Forward Voltage (per element) @ IF=2.0A VFM 1.1 V Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC IRM 10 500 uA Rating for Fusing (t<8.3ms) I2t 15 A2S RθJA 30 K/W TJ, TSTG -55 to +160 ºC CJ 25 pF Typical Thermal Resistance (Note3) Operating and Storage Temperature Range Typical Junction Capacitance per element (Note2) Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad. “-G” suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) Io, Instantaneous Fwd Current (A) Io, Average Rectified Current (A) 2.0 1.5 1.0 0.5 TJ = 150ºC TJ = 25ºC 1.0 0.1 Pulse Width =300 uS 0 0 0 75 150 0 225 0.2 0.4 0.6 0.8 1.0 T, Temperature (ºC) VF, Instantaneous Fwd Voltage (V) Flg1. Forward Current Derating Curve Flg2. Typical Fwd Characteristics 100 1.2 1.4 100 TJ=150ºC Single Half Sine Wave (JEDEC Nethod) TJ=25ºC IJ, Junction Capacitance (pF) 80 IFSM, Peak Fwd Surge Current (A) 10 60 40 20 0 10 1 1 10 Number of Cycles At 60Hz Flg3. Max Non-Repetitive Peak Fwd Surge Current 100 1 10 100 VR, Reverse Voltage (V) Flg 4. Typical Junction Capacitance “-G” suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2 Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) IR, Instantaneous Reverse Current (mA) (A) 10,000 1000 TJ = 150ºC 100 TJ = 125ºC TJ = 100ºC 10 1.0 TJ = 25ºC 0.1 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Flg5. Typical Reverse Characteristics “-G” suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page3