SEMICONDUCTOR KDR735T TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. E B FEATURES 1 DIM MILLIMETERS _ 0.2 A 2.9 + 4 Low Reverse Current : IR=0.1 A(Typ.) B High Reliability. D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 + F A Small Package : TSQ. 3 ) G H RATING UNIT Reverse Voltage VR 30 V Average Forward Current IO* 200 mA Surge Current (10ms) IFSM* 1 A Power Dissipation PD** 900 mW Tj 125 Tstg -40 125 Junction Temperature Storage Temperature Range * Unit rating. (Total rating = Unit rating I SYMBOL I CHARACTERISTIC 0.00-0.10 0.25+0.3/-0.15 _ 0.1 0.60 + _ 0.1 0.55 + K C D 2 MAXIMUM RATING (Ta=25 1.6+0.2/-0.1 _ 0.05 0.70 + C 4 1. D1 ANODE 2. D2 ANODE 3. D2 CATHODE 4. D1 CATHODE 3 D1 D2 1 2 TSQ 1.5) ** Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Lot No. Marking 3 4 Type Name R3 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 2 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=200mA - - 0.60 V Reverse Current IR VR=10V - - 1.0 A 2006. 2. 15 Revision No : 0 1/2 KDR735T I R - VR I F - VF 1m REVERSE CURRENT I R (A) 100m Ta 100µ =-2 5 1m C 10m Ta =1 25 Ta C =7 5 Ta C =2 5 C FORWARD CURRENT I F (A) 1 10µ Ta=125 C 100µ 10µ Ta=75 C 1µ Ta=25 C 100n Ta=-25 C 1µ 10n 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 10 FORWARD VOLTAGE VF (V) P - Ta 240 100 f=1MHz Ta=25 C POWER DISSIPATION P (mW) TOTAL CAPACITANCE CT (pF) 30 REVERSE VOLTAGE VR (V) C T - VR 10 1 Mounted on a glass epoxy circuit board of 20 20mm, pad dimension 4 4mm. 200 160 120 80 40 0 0 10 20 REVERSE VOLTAGE VR (V) 2006. 2. 15 20 Revision No : 0 30 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2/2