This version: Jul. 1998 Previous version: Jan. 1998 E2Q0016-38-71 ¡ electronic components KGF1191 ¡ electronic components KGF1191 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band to the L-band, that features low voltage operation, low current operation, high gain, and high isolation. The KGF1191 specifications are guaranteed to a fixed matching circuit for 3 V and 850 MHz; external impedance-matching circuits are also required. Because of the high gain and high isolation at 3 V, the KGF1191 is ideal as an intermediate-stage amplifier for portable phones. FEATURES • Low voltage and low current: 3 V, 5 mA (max.) • Specifications guaranteed to a fixed matching circuit for 3 V and 850 MHz • High linear gain: 24 dB (typ.) • High isolation: –35 dB (typ.) • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 Lead frame material 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more (Unit: mm) 1/13 ¡ electronic components KGF1191 MARKING (4) (3) K X X (1) (2) NUMERICAL NUMERICAL LOT NUMBER PRODUCT TYPE (1) IN (2) VD1 (3) OUT (4) GND CIRCUIT VD1 (2) OUT (3) IN (1) GND (4) 2/13 ¡ electronic components KGF1191 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Supply voltage Item VDD Ta = 25°C V — 7 Gate voltage VG Ta = 25°C V –3.0 0.4 Total power dissipation Ptot Ta = 25°C mW — 200 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Condition Operating current ID (*1), PIN = –13 dBm Noise figure F (*1) Unit Min. Typ. Max. mA — — 5.0 — 4.0 5.0 — 4.5 — f = 850 MHz Linear gain Output power GLIN PO (*1), PIN = –30 dBm (*1), PIN = –13 dBm f = 1.5 GHz dB f = 1.9 GHz — 5.0 — f = 850 MHz 18.0 24.0 — — 19.0 — f = 1.9 GHz — 15.0 — f = 850 MHz 0 3.0 — f = 1.5 GHz f = 1.5 GHz dB dBm f = 1.9 GHz Isolation ISO (*1), PIN = –20 dBm f = 850 MHz f = 1.5 GHz f = 1.9 GHz dB — 1.5 — — 0 — — –35.0 — — –30.0 — — –30.0 — *1 Self-bias condition: VDD = 3±0.3 V, VG = 0 V 3/13 ¡ electronic components KGF1191 RF CHARACTERISTICS 4/13 ¡ electronic components KGF1191 5/13 ¡ electronic components KGF1191 6/13 ¡ electronic components KGF1191 7/13 ¡ electronic components KGF1191 Typical S Parameters VDD = 3 V, VG = 0 V, ID = 3.56 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 100.0 0.826 –2.48 3.689 26.33 0.001 102.87 0.969 –2.13 200.0 0.828 –5.42 4.054 –2.68 0.002 178.63 0.965 –3.46 300.0 0.826 –8.25 4.047 –19.24 0.001 85.27 0.960 –4.74 400.0 0.823 –10.98 3.944 –32.66 0.002 81.51 0.957 –6.19 500.0 0.818 –13.69 3.811 –43.77 0.002 96.73 0.954 –7.65 600.0 0.813 –16.49 3.742 –53.51 0.001 139.53 0.950 –8.87 700.0 0.808 –19.25 3.565 –62.73 0.002 122.83 0.945 –10.31 800.0 0.802 –22.02 3.510 –70.82 0.002 119.07 0.941 –11.55 900.0 0.796 –24.75 3.362 –78.70 0.002 132.88 0.937 –12.91 1000.0 0.789 –27.55 3.339 –85.73 0.003 141.62 0.932 –14.08 1100.0 0.781 –30.33 3.105 –93.15 0.004 145.54 0.928 –15.36 1200.0 0.770 –33.16 3.050 –99.64 0.004 148.84 0.922 –16.66 1300.0 0.761 –35.86 2.945 –105.81 0.004 160.42 0.920 –17.82 1400.0 0.750 –38.93 2.877 –111.89 0.005 167.88 0.912 –19.06 1500.0 0.737 –41.28 2.709 –118.68 0.007 167.34 0.909 –19.98 1600.0 0.723 –44.23 2.629 –124.25 0.009 167.54 0.906 –21.15 1700.0 0.713 –47.11 2.547 –129.31 0.010 168.93 0.901 –22.12 1800.0 0.696 –49.54 2.419 –135.82 0.010 171.82 0.898 –23.36 1900.0 0.690 –52.26 2.315 –141.51 0.013 167.51 0.893 –23.98 2000.0 0.663 –55.32 2.285 –145.96 0.016 169.19 0.885 –25.32 2100.0 0.645 –57.91 2.227 –151.50 0.016 170.19 0.882 –26.00 2200.0 0.629 –60.52 2.091 –157.05 0.019 165.87 0.875 –27.26 2300.0 0.610 –62.96 2.006 –162.57 0.022 169.05 0.874 –28.24 2400.0 0.589 –66.12 1.971 –167.19 0.025 165.57 0.867 –28.90 2500.0 0.571 –68.72 1.875 –171.67 0.028 165.24 0.866 –30.12 2600.0 0.551 –70.99 1.801 –176.77 0.031 162.81 0.864 –30.61 2700.0 0.532 –73.75 1.742 178.62 0.034 161.97 0.856 –31.85 2800.0 0.508 –76.47 1.706 173.98 0.038 160.90 0.858 –32.49 2900.0 0.484 –79.35 1.671 169.70 0.041 160.05 0.853 –33.54 3000.0 0.462 –81.93 1.608 164.43 0.046 157.80 0.850 –34.74 8/13 ¡ electronic components KGF1191 Typical S Parameters VDD = 3 V, VG = 0 V, ID = 3.56 mA Frequency : 0.1 to 3.0 GHz Z0 = 50 W 9/13 ¡ electronic components KGF1191 Typical S Parameters VDD = 5 V, VG = 0 V, ID = 3.60 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 100.0 0.821 –2.46 3.840 27.87 0.001 106.42 0.970 –2.14 200.0 0.824 –5.35 4.257 –1.07 0.001 14.24 0.966 –3.35 300.0 0.821 –8.20 4.265 –17.53 0.001 111.02 0.963 –4.61 400.0 0.819 –10.93 4.173 –30.85 0.001 102.62 0.960 –5.99 500.0 0.814 –13.64 4.041 –41.88 0.001 107.82 0.957 –7.42 600.0 0.810 –16.52 3.984 –51.44 0.002 104.70 0.952 –8.74 700.0 0.805 –19.23 3.803 –60.76 0.002 119.01 0.948 –10.13 800.0 0.799 –22.06 3.755 –68.89 0.001 118.47 0.946 –11.33 900.0 0.792 –24.80 3.609 –76.94 0.002 142.84 0.940 –12.76 1000.0 0.786 –27.81 3.601 –83.94 0.003 153.34 0.933 –13.87 1100.0 0.775 –30.47 3.355 –91.50 0.003 147.32 0.929 –15.16 1200.0 0.765 –33.34 3.309 –98.33 0.004 148.53 0.925 –16.33 1300.0 0.755 –36.06 3.208 –104.65 0.005 156.44 0.922 –17.45 1400.0 0.743 –39.21 3.128 –110.68 0.006 163.77 0.914 –18.75 1500.0 0.729 –41.61 2.946 –117.74 0.007 168.64 0.909 –19.67 1600.0 0.714 –44.53 2.882 –123.29 0.009 169.40 0.905 –20.74 1700.0 0.700 –47.43 2.792 –128.77 0.010 173.81 0.903 –21.84 1800.0 0.684 –49.85 2.659 –135.06 0.010 170.88 0.896 –22.79 1900.0 0.667 –52.61 2.532 –140.91 0.013 168.32 0.888 –23.52 2000.0 0.646 –55.60 2.502 –145.68 0.015 170.35 0.887 –24.80 2100.0 0.629 –58.35 2.434 –151.11 0.018 168.88 0.880 –25.51 2200.0 0.613 –60.75 2.279 –156.84 0.019 166.36 0.874 –26.69 2300.0 0.593 –63.14 2.192 –162.33 0.023 167.44 0.874 –27.52 2400.0 0.570 –66.00 2.137 –167.16 0.025 168.58 0.865 –28.22 2500.0 0.551 –68.61 2.050 –171.55 0.027 163.96 0.866 –29.33 2600.0 0.530 –70.87 1.959 –176.76 0.030 161.14 0.860 –29.76 2700.0 0.509 –73.62 1.898 178.81 0.033 161.94 0.856 –30.88 2800.0 0.486 –76.19 1.749 173.93 0.036 161.44 0.855 –31.65 2900.0 0.462 –78.64 1.810 169.62 0.040 158.20 0.852 –32.56 3000.0 0.440 –81.11 1.734 164.47 0.044 157.30 0.850 –33.67 10/13 ¡ electronic components KGF1191 Typical S Parameters VDD = 5 V, VG = 0 V, ID = 3.60 mA Frequency : 0.1 to 3.0 GHz Z0 = 50 W 11/13 ¡ electronic components KGF1191 Test Circuit and Bias Configuration for KGF1191 at 850 MHz CB CF CB RFC CF VD1 RG T1 T2 IN CC T3 (2) (1) KGF (3) 1191 (4) VDD T4 T6 T5 OUT CC T7 C1 C2 T1: Z0 = 130 W, E = 50 deg T4: Z0 = 100 W, E = 62 deg T2: Z0 = 100 W, E = 15 deg T5: Z0 = 100 W, E = 18 deg T3 = T7: Z0 = 100 W, E = 6 deg T6: Z0 = 60 W, E = 15 deg C1 = 0.6 pF, C2 = 5.0 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 200 nH, RG = 1000 W Test Circuit and Bias Configuration for KGF1191 at 1.5 GHz CB CF CB CF VD1 RG IN CC T1 T2 (2) T3 (1) (3) KGF 1191 (4) T5 VDD T6 T7 RFC OUT CC T4 T8 T9 C1 C2 C3 T1: Z0 = 75 W, E = 31 deg T5: Z0 = 100 W, E = 61 deg T2: Z0 = 100 W, E = 10 deg T6: Z0 = 100 W, E = 16 deg T3: Z0 = 100 W, E = 65 deg T7: Z0 = 75 W, E = 31 deg T4: Z0 = 100 W, E = 8 deg T8 = T9: Z0 = 100 W, E = 12 deg C1 = 2.0 pF, C2 = 2.5 pF, C3 = 2.7 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG = 1000 W 12/13 ¡ electronic components KGF1191 Test Circuit and Bias Configuration for KGF1191 at 1.9 GHz CB CF CB CF VD1 RG IN CC T1 T2 (2) T3 (1) (3) KGF 1191 (4) T5 VDD T6 T7 RFC OUT CC T4 T8 C1 C2 T1: Z0 = 75 W, E = 40 deg T5: Z0 = 100 W, E = 88 deg T2: Z0 = 100 W, E = 35 deg T6: Z0 = 100 W, E = 35 deg T3: Z0 = 100 W, E = 88 deg T7: Z0 = 75 W, E = 40 deg T4 = T8: Z0 = 100 W, E = 12 deg C1 = 0.7 pF, C2 = 1.4 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG = 1000 W 13/13