Light Emitting Diode(InGaN) KLP-32B-X-X DIMENSIONS KLP-32B-x-x is a high bright InGaN blue LED, and has the optimized optical characteristics. 1 Features • Transparent epoxy Encapsulent • High Optical Output n o i t c e ne de no d oh o Ct n aA nC . i. 2 P1 2 Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage (w/o Zener Option) Symbol VR Ratings 5 Unit V Reverse current ( w Zener Option) IR 50 mA Forward current IF 30 mA IFP Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 0.1 A PD 90 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] IF = 20 mA Min 9.00 250 - Typ 3.2 12.00 350 469 Max - Unit V mW mcd nm λd IF = 20 mA 465 - 478 nm Spectral half bandwidth ∆λ IF = 20 mA - 25 - nm Half angle ∆Θ IF = 20 mA - 110 - deg. Optical Output Power Peak emission wavelength Doninant Wave Length Symbol VF Po Iv λP Conditions IF = 20 mA IF = 20 mA 1/2 Light Emitting Diode(InGaN) KLP-32B-X-X Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 40 Relative intensity Forward current IF(mA) (IF) 50 30 20 10 0 0 20 40 60 80 1 0.5 0 (℃) 100 5 0 10 Ambient temperature Ta 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 350 100 (℃) 400 Ambient temperature Ta 450 500 550 600 Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) 0 +60 +4 +20 -20 -4 0 50 0 -80 -100 + 80 10 0 -6 5 0 0 + 10 0 Forward current IF 30 25 20 15 0 100 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 100