Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) 52m 0.55 ID = -4.1 A +0.1 1.3-0.1 +0.1 2.4-0.1 VDS (V) = -30V 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Gate-Source Voltage VDS -30 V Drain-Source Voltage VGS 20 V Continuous Drain Current *1 TA=25 -4.1 ID Pulsed Drain Current *2 Power Dissipation *1 A -3.5 TA=70 -20 IDM TA=25 1.4 PD W 1 TA=70 Junction and Storage Temperature Range TJ, TSTG -55 to 150 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Symbol t 10s Maximum Junction-to-Ambient *1 Steady-State Maximum Junction-to-Lead *2 Steady-State RèJA RèJL Typ Max Unit 65 90 /W 85 125 /W 43 60 /W 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 Transistors IC SMD Type KO3407 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Testconditons ID=250ìA, VGS=0V Min Max -30 Unit V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V ,TJ=55 -5 IGSS VDS=0V, VGS= 20V 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250ìA -1 -1.8 -3 V On state drain current ID(ON) VGS=-4.5V, VDS=-5V -10 40.5 52 57 73 64 87 mÙ -1 V -2.2 A Gate-Body leakage current VGS=-10V, ID=4.1A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A TJ=125 VGS=-4.5V, ID=-3A Forward Transconductance gFS VDS=-5V, ID=-4A Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 5.5 Ciss Gate resistance Coss Input Capacitance Crss Output Capacitance Rg Total Gate Charge(10V) Qg Total Gate Charge (4.5V) Qg VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A ìA A 8.2 -0.77 IS Reverse Transfer Capacitance mÙ S 700 pF 120 pF 75 pF 10 Ù 14.3 nC 7 nC Gate Source Charge Qgs 3.1 nC Gate Drain Charge Qgd 3 nC Turn-On Rise Time tD(on) 8.6 ns Turn-Off DelayTime 5 ns tD(off) 28.2 ns tf 13.5 ns tr Turn-Off Fall Time Turn-On DelayTime VGS=-10V, VDS=-15V, RL=3.6Ù,RGEN=3Ù Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/µs 27 ns Body Diode Reverse Recovery Charge Qrr IF=-4A, dI/dt=100A/µs 15 nC Marking Marking 2 Typ www.kexin.com.cn A7