LRC LESD8B5.0ST1G

LESHAN RADIO COMPANY, LTD.
Transient Voltage Suppressors for ESD Protection
General Description
LESD8B5.0ST5G
The ESD8B Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space comes at a premium.
1
2
SOD882
Specification Features
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Low Capacitance 15 pF
Low Clamping Voltage
Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm)
Low Body Height: 0.016″ (0.4 mm)
Stand−off Voltage: 3.3 V, 5 V
Low Leakage
Response Time is < 1 ns
IEC61000−4−2 Level 4 ESD Protection
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
This is a Pb−Free Device
We declare that the material of product
compliance with RoHS requirements.
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
Ordering information
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
Device
Marking
Shipping
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
LESD8B5.0ST1G
M
5000/Tape&Reel
Device Meets MSL 1 Requirements
LESD8B5.0ST3G
M
8000/Tape&Reel
LESD8B5.0ST5G
M
10000/Tape&Reel
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Contact
Air
IEC 61000−4−4 (EFT)
Value
Unit
±18
±18
kV
40
A
300
mW
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
RqJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
°PD°
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
Rev.O 1/4
86-755-83468588 www.fazhanIC.com
LESHAN RADIO COMPANY, LTD.
LESD8B5.0ST5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
IPP
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
C
IT
VC VBR VRWM IR
IR VRWM VBR VC
IT
Working Peak Reverse Voltage
V
Maximum Reverse Leakage Current @ VRWM
VBR
IT
I
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional TVS
Capacitance @ VR = 0 V and f = 1.0 MHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Device
LESD8B5.0ST5G
VRWM
(V)
IR (mA)
@ VRWM
VBR (V) @ IT
(Note 2)
Device
Marking
Max
Max
Min
M
5.0
1.0
5.8
IT
C (pF)
VC
VC (V) @ IPP = 1 A
Max
mA
Typ
Per IEC61000−4−2
(Note 3)
Max Per 8 x 20 ms
(Note 4)
7.8
1.0
15
Figures 1 and 2
See Below
12.5
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Surge current waveforms per Figure 5.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
Rev.O 2/4
86-755-83468588 www.fazhanIC.com
LESHAN RADIO COMPANY, LTD.
LESD8B5.0ST5G
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
80
Figure 5. 8 X 20 ms Pulse Waveform
Rev.O 3/4
86-755-83468588 www.fazhanIC.com
LESHAN RADIO COMPANY, LTD.
LESD8B5.0ST5G
SOD882
DIMENSION OUTLINE:
Unit:mm
Rev.O 4/4
86-755-83468588 www.fazhanIC.com