VISHAY LVB14A

New Product
LVB14A
Vishay General Semiconductor
Low VF Surface Mount Transient Voltage Suppressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 µs)
• Ideal for automated placement
• Low forward voltage
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Solder dip 260 °C, 40 s
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VBR
13.2 - 14.8 V
IPPM with 10 x 1000 µs
31 A
IPPM with 1.4 x 6.5 µs
17.5 A
VF at IF = 1.0 A
0.35 V
IFSM
100 A
TJ max.
150 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs sensor units specifically for protecting
12 V supplied sensitive equipment against transient
overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
VALUE
UNIT
L14
Peak power pulse current with a 10/1000 µs waveform (Fig. 1) (1)(2)
IPPM
31
A
Peak pulse current with a 1.4/6.5 µs waveform (Fig. 2)
IPPM
17.5
A
Peak forward surge current 8.3 ms single half sine-wave (2)
IFSM
100
A
Power dissipation on infinite heatsink, TL = 50 °C
PD
5
W
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 1
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal
Document Number: 88483
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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New Product
LVB14A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
TYP.
MAX.
UNIT
Breakdown voltage
at IZ = 1 mA
VBR
13.2
-
14.8
V
Max. clamping voltage with 10 x 1000 µs
at IPPM = 31 A
VC
-
-
19.5
V
Max. clamping voltage with 1.4 x 6.5 µs
at IPPM = 17.5 A
VC
-
-
15.8
V
Instantaneous forward voltage (1)
at IF = 1.0 A
VF
-
0.45
0.35
0.5
-
V
Reverse leakage current (1)
at VWM = 12.0 V
IR
-
-
100
µA
TJ = 25 °C
TJ = 125 °C
Note:
(1) Measured on a 300 µs square pulse width
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to lead
RθJL
20
Typical thermal resistance, junction to ambient (1)
RθJA
100
UNIT
°C/W
Note:
(1) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
LVB14A-E3/52
0.096
52
750
7" diameter plastic tape and reel
LVB14A-E3/5B
0.096
5B
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
IPPM - Peak Pulse Current, % IRSM
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
1.0
2.0
3.0
t - Time (ms)
Figure 1. Pulse Waveform
www.vishay.com
2
100
50
Pulse Waveform 1.4/6.5 µs
0
0
0
% IPPM (IPPM = 17.5 A)
1.4 µs
4.0
6.5 µs
t - Time (µs)
Figure 2. Pulse Waveform
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88483
Revision: 20-Oct-08
New Product
LVB14A
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
100
75
50
25
1000
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
100
0
0
25
50
75
100
125
150
175
0
200
5
10
15
Reverse Voltage (V)
TJ - Initial Temperature (°C)
Figure 3. Pulse Poweror Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88483
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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