MITSUBISHI SEMICONDUCTORS <HVIC> M81719FP RY INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81719FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT .............................. +120mA/–250mA ¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for Automotive, PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. 1. VCC 8. VB 2. HIN 7. HO 3. LIN 6. VS 4. GND 5. LO Outline:8P2S BLOCK DIAGRAM HV LEVEL SHIFT VREG HIN 2 FILTER VREG/VCC LEVEL SHIFT 3 FILTER VREG/VCC LEVEL SHIFT VB 7 HO 6 VS 1 VCC 5 LO 4 GND RQ INTER LOCK R S PULSE GEN UV DETECT FILTER LIN 8 UV DETECT FILTER DELAY Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> RY INA ELIM M81719FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 624 Unit V V V VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 VBS = VB–VS V V V V –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 0.6 6.0 HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board W mW/°C °C/W °C °C 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 °C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Test conditions VB High Side Floating Supply Absolute Voltage VS High Side Floating Supply Offset Voltage High Side Floating Supply Voltage VBS VHO VCC VLO VIN 10 VS VBS = VB–VS High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Min. VS+10 0 HIN, LIN Limits Typ. — — — 10 0 — — — 0 — Max. VS+20 500 Unit V V 20 VB V V 20 VCC 7 V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta (°C) Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> RY INA ELIM M81719FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol Parameter Test conditions Limits Typ.* — Max. 1.0 0.2 0.5 mA Unit IFS Floating Supply Leakage Current VB = VS = 600V Min. — IBS VBS Standby Current HIN = LIN = 0V — ICC VCC Standby Current HIN = LIN = 0V 0.2 0.6 1.0 mA VOH High Level Output Voltage IO = –20mA, LO, HO 13.6 14.2 — V VOL Low Level Output Voltage IO = 20mA, LO, HO — 0.3 0.6 V VIH High Level Input Threshold Voltage HIN, LIN 2.7 — — V VIL Low Level Input Threshold Voltage HIN, LIN — — 0.8 V IIH High Level Input Bias Current VIN = 5V — 5 20 µA IIL Low Level Input Bias Current VIN = 0V — — 2 µA VBSuvr VBS Supply UV Reset Voltage 8.0 8.9 9.8 V VBSuvt VBS Supply UV Trip Voltage 7.4 8.2 9.0 V VBSuvh VBS Supply UV Hysteresis Voltage 0.4 0.6 — V tVBSuv VBS Supply UV Filter Time — 7.5 — µs VCCuvr VCC Supply UV Reset Voltage 8.0 8.9 9.8 V VCCuvt VCC Supply UV Trip Voltage 7.4 8.2 9.0 V VCCuvh VCC Supply UV Hysteresis Voltage 0.4 0.6 — V tVCCuv VCC Supply UV Filter Time — 7.5 — µs IOH Output High Level Short Circuit Pulsed Current VO = 0V, VIN = 5V, PW < 10µs** 120 200 — mA IOL Output Low Level Short Circuit Pulsed Current VO = 15V, VIN = 0V, PW < 10µs** 250 350 — mA ROH Output High Level On Resistance IO = –20mA, ROH = (VOH–VO)/IO — 40 70 Ω ROL Output Low Level On Resistance IO = 20mA, ROL = VO/IO — 15 30 Ω tdLH(HO) High Side Turn-On Propagation Delay CL = 1000pF between HO-VS — 250 350 ns tdHL(HO) High Side Turn-Off Propagation Delay CL = 1000pF between HO-VS — 250 350 ns trH High Side Turn-On Rise Time CL = 1000pF between HO-VS — 130 220 ns tfH High Side Turn-Off Fall Time CL = 1000pF between HO-VS — 50 80 ns tdLH(LO) Low Side Turn-On Propagation Delay CL = 1000pF between LO-GND — 250 350 ns tdHL(LO) Low Side Turn-Off Propagation Delay CL = 1000pF between LO-GND — 250 350 ns trL Low Side Turn-On Rise Time CL = 1000pF between LO-GND — 130 220 ns tfL Low Side Turn-Off Fall Time CL = 1000pF between LO-GND — 50 80 ns ∆tdLH Delay Matching, High Side and Low Side Turn-On |tdLH(HO)–tdLH(LO)| — 0 30 ns ∆tdHL Delay Matching, High Side and Low Side Turn-Off |tdHL(HO)–tdHL(LO)| — 0 30 ns CONVEX PULSE 60 80 100 ns CONCAVE PULSE 110 150 190 ns CONVEX PULSE 60 80 100 ns CONCAVE PULSE 110 150 190 ns — — 100 ns tinon Input Filter Time (ON) tinoff Input Filter Time (OFF) ∆PWIO I/O Pulse Width Difference |PW(IN)–PW(OUT)| µA * Typ. is not specified. ** It is recommended not to input short pulse continuously. Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> RY INA ELIM M81719FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER TIMING REQUIREMENT IN 50% tdLH 50% tr tdHL 90% OUT tf 90% 10% 10% FUNCTION TABLE (X: H or L) HIN LIN VBS UV VCC UV HO LO L L H H X X L H L H L H L H X X H H H H L L H H H H H H H H L L L L H H L L L L L H L H L H L L Behavioral state LO = HO = Low LO = High HO = High LO = HO = High HO = Low, VBS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped Note : “L” state of VBS UV, VCC UV means that UV trip voltage. TIMING DIAGRAM 1.Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) Because there is not interlock circuit, in the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “H”. HIN LIN HO LO Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> RY INA ELIM M81719FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER 2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes “H”. VCCuvh VCC VCCuvr VCCuvt tVCCuv LO LIN When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output signal HO becomes “H”. VBS(H) LIN(L) VCCuvh VCC VCCuvr VCCuvt tVCCuv HO HIN When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output signal becomes “L”. And then, VBS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until next input signal HIN is “H”. VBSuvh VBS VBSuvr VBSuvt tVBSuv HO HIN Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> RY INA ELIM M81719FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER 3.Allowable Supply Voltage Transient It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, shutting off VBS firstly and shutting off VCC secondly. At the time of starting VCC and VBS, power supply should be increased slowly. If it is increased rapidly, output signal (HO or LO) may be “H”. Consideration As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: VS). Therefore, pin insulation space distance should be taken enough. PACKAGE OUTLINE e 8 b2 E Recommended Mount Pad 1 Symbol F 4 A D G b x M A2 e A1 y L L1 HE e1 I2 5 c z Z1 Detail G Detail F A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 Dimension in Millimeters Min Nom Max – – 1.9 0.05 – – – 1.5 – 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 – 1.27 – 5.9 6.2 6.5 0.2 0.4 0.6 – 0.9 – – 0.595 – – – 0.745 – – 0.25 – – 0.1 0° – 10° – 0.76 – – 5.72 – 1.27 – – Mar. 2006