PANASONIC MA27D27

Schottky Barrier Diodes (SBD)
MA27D27
Silicon epitaxial planar type
For super high speed switching
0.60±0.05
■ Features
0.20±0.05
Unit: mm
0.12+0.05
–0.02
2
0.27+0.05
–0.02
■ Absolute Maximum Ratings Ta = 25°C
Unit
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Forward current (Average)
IF(AV)
100
mA
Peak forward current
IFM
200
mA
Non-repetitive peak forward
surge current *
IFSM
1
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.15 max.
Rating
0.52±0.03
Reverse voltage
5°
Symbol
0 to 0.01
Parameter
0.20±0.05
5°
1.00±0.05
1.40±0.05
1
• Small reverse current IR
• Optimum for high frequency rectification because of its short
reverse recovery time trr
• SSS-Mini type 2-pin package
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: 8L
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Forward voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
VF1
IF = 10 mA
0.38
0.44
VF2
IF = 100 mA
0.54
0.58
Reverse current
IR
VR = 10 V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
11
pF
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
1
ns
Reverse recovery time
*
µA
0.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. * : trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: March 2003
Wave Form
Analyzer
(SAS-8130) V
R
Ri = 50 Ω
A
SKH00122AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10mA
IF = IR = 100 mA
RL = 100 Ω
1
MA27D27
IF  V F
I R  VR
103
103
102
102
Ct  VR
Ta = 25°C
Ta = 150°C
125°C
75°C
25°C
−20°C
10−1
10−2
10−3
75°C
1
10−1
0.4
0.6
25°C
−2
10−3
0.2
Forward voltage VF (V)
2
10
10
0
Terminal capacitance Ct (pF)
10
1
12
125°C
Reverse current IR (µA)
Forward current IF (mA)
Ta = 150°C
0
5
10
15
20
Reverse voltage VR (V)
SKH00122AED
25
8
4
0
0
5
10
15
20
Reverse voltage VR (V)
25
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL