PANASONIC MA742

Schottky Barrier Diodes (SBD)
MA3J742 (MA742)
Silicon epitaxial planar type
Unit: mm
For switching
0.3+0.1
–0
0.15+0.1
–0.05
1
2
(0.65) (0.65)
5°
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
IF
30
mA
Forward current (DC)
Single
Series * Peak forward current Single
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
IFM
SMini3-F1 Package
Marking Symbol: M1U
20
150
Series * (0.15)
Rating
0 to 0.1
Symbol
0.9±0.1
1.3±0.1
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
1.25±0.1
2.1±0.1
• Two MA3X716 (MA716) is contained in one package (series
connection)
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 3-pin package
(0.425)
3
■ Features
Internal Connection
mA
110
3
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *: Value per chip
1
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
1
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
h
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00056AED
1
MA3J742
IF  V F
IR  V R
103
102
−20°C
10
1
Reverse current IR (µA)
Forward current IF (mA)
Ta = 125°C
1.0
10−1
0.8
Ta = 125°C
10
75°C
1
25°C
10−1
0
0.2
0.4
0.6
0.8
1.0
10−2
1.2
0
5
10
15
20
25
30
Ct  VR
2.4
f = 1 MHz
Ta = 25°C
Reverse current IR (µA)
10
1
10−1
10−2
−40
1.6
1.2
0.8
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
Terminal capacitance Ct (pF)
2.0
VR = 30 V
15 V
200
0.4
3 mA
1 mA
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00056AED
0
−40
0
40
80
120
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR  T a
102
IF = 30 mA
0.6
0.2
Forward voltage VF (V)
103
Forward voltage VF (V)
75°C 25°C
102
10−2
VF  Ta
103
30
160
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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2001 MAR
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