19-4293; Rev 0; 10/08 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer The MAX19999 dual-channel downconverter provides 8.3dB of conversion gain, +24dBm input IP3, +11.4dBm 1dB input compression point, and a noise figure of 10.5dB for 3000MHz to 4000MHz WiMAX™ and LTE diversity receiver applications. With an optimized LO frequency range of 2650MHz to 3700MHz, this mixer is ideal for low-side LO injection architectures. In addition to offering excellent linearity and noise performance, the MAX19999 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, and a pair of differential IF output amplifiers. Integrated onchip baluns allow for single-ended RF and LO inputs. The MAX19999 requires a nominal LO drive of 0dBm and a typical supply current of 388mA at VCC = +5.0V or 279mA at VCC = +3.3V. The MAX19999 is pin compatible with the MAX19997A 1800MHz to 2900MHz mixer and pin similar with the MAX19985/MAX19985A and MAX19995/MAX19995A series of 700MHz to 2200MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19999 is available in a compact 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40°C to +85°C. Applications 3.5GHz WiMAX and LTE Base Stations Features o o o o o o o o o o o o o o o o o 3000MHz to 4000MHz RF Frequency Range 2650MHz to 3700MHz LO Frequency Range 50MHz to 500MHz IF Frequency Range 8.3dB Conversion Gain +24dBm Input IP3 10.5dB Noise Figure +11.4dBm Input 1dB Compression Point 74dBc Typical 2 x 2 Spurious Rejection at PRF = -10dBm Dual Channels Ideal for Diversity Receiver Applications Integrated LO Buffer Integrated LO and RF Baluns for Single-Ended Inputs Low -3dBm to +3dBm LO Drive Pin Compatible with the MAX19997A 1800MHz to 2900MHz Mixer Pin Similar to the MAX9995/MAX9995A and MAX19995/MAX19995A 1700MHz to 2200MHz Mixers and the MAX9985/MAX9985A and MAX19985/MAX19985A 700MHz to 1000MHz Mixers 39dB Channel-to-Channel Isolation Single +5.0V or +3.3V Supply External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode Fixed Broadband Wireless Access Ordering Information Microwave Links Wireless Local Loop Private Mobile Radios Military Systems Pin Configuration/Functional Diagram and Typical Application Circuit appear at end of data sheet. TEMP RANGE PIN-PACKAGE MAX19999ETX+ PART -40°C to +85°C 36 Thin QFN-EP* MAX19999ETX+T -40°C to +85°C 36 Thin QFN-EP* +Denotes a lead-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. WiMAX is a trademark of WiMAX Forum. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX19999 General Description MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer ABSOLUTE MAXIMUM RATINGS VCC to GND ...........................................................-0.3V to +5.5V RF_, LO to GND.....................................................-0.3V to +0.3V IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M, LO_ADJ_D to GND.................................-0.3V to (VCC + 0.3V) RF_, LO Input Power ......................................................+15dBm RF_, LO Current (RF and LO are DC shorted to GND through balun).................................................................50mA Continuous Power Dissipation (Note 1) ..............................8.7W θJA (Notes 2, 3)..............................................................+38°C/W θJC (Note 3).....................................................................7.4°C/W Operating Case Temperature Range (Note 4) ...................................................TC = -40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150°C. Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150°C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, no input RF or LO signals applied, VCC = +4.75V to +5.25V, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, TC = +25°C, unless otherwise noted. R1 = R4 = 750Ω, R2 = R5 = 698Ω.) PARAMETER SYMBOL Supply Voltage VCC Supply Current ICC CONDITIONS MIN TYP MAX UNITS 4.75 5 5.25 V 388 420 mA Total supply current +3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS ( Typical Application Circuit , no input RF or LO signals applied, T C = -40°C to +85°C. Typical values are at VCC = +3.3V, TC = +25°C, unless otherwise noted. R1, R4 = 1.1kΩ; R2, R5 = 845Ω.) (Note 5) PARAMETER SYMBOL CONDITIONS Supply Voltage VCC (Note 6) Supply Current ICC Total supply current MIN TYP MAX UNITS 3 3.3 3.6 V 279 mA RECOMMENDED AC OPERATING CONDITIONS MAX UNITS RF Frequency PARAMETER fRF (Notes 5, 7) 3000 4000 MHz LO Frequency fLO (Notes 5, 7) 2650 3700 MHz 100 500 fIF Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Notes 5, 7) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Notes 5, 7) 50 250 (Note 7) -3 +3 IF Frequency LO Drive Level 2 SYMBOL PLO CONDITIONS MIN TYP MHz _______________________________________________________________________________________ dBm Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.) (Note 8) PARAMETER Conversion Gain SYMBOL GC Conversion Gain Flatness CONDITIONS TC = +25°C (Notes 6, 9) MIN TYP MAX UNITS 7.3 8.3 9.3 dB fRF = 3200MHz to 3900MHz, over any 100MHz band 0.15 dB -0.01 dB/°C dBm Gain Variation Over Temperature TCCG fRF = 3200MHz to 3900MHz, TC = -40°C to +85°C Input Compression Point IP1dB (Notes 6, 9, 10) 9.8 11.4 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone (Notes 6, 9) 21.6 24.3 Third-Order Input Intercept Point IIP3 Third-Order Input Intercept Point Variation Over Temperature Noise Figure NFSSB fRF = 3550MHz, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = +25°C (Notes 6, 9) Single sideband, no blockers present (Notes 5, 6) 10.5 10.5 0.018 Noise Figure Under Blocking Conditions NFB fBLOCKER = 3700MHz, PBLOCKER = 8dBm, fRF = 3450MHz, fLO = 3100MHz, PLO = 0dBm, VCC = 5.0V, TC = +25°C (Notes 5, 6, 11) 2x2 PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + PRF = -5dBm, 175MHz, TC = +25°C (Notes 6, 9) PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + 116.67MHz, TC = +25°C PRF = -5dBm, (Notes 6, 9) RF Input Return Loss LO on and IF terminated into a matched impedance LO Input Return Loss IF Output Impedance ZIF dBm 13 dB Single sideband, no blockers present, fRF = 3500MHz, TC = +25°C (Notes 5, 6) Single sideband, no blockers present, TC = -40°C to +85°C 3x3 24.3 ±0.3 TCNF 3RF-3LO Spurious Rejection 22 fRF1 - fRF2 = 1MHz, TC = -40°C to +85°C Noise Figure Temperature Coefficient 2RF-2LO Spurious Rejection dBm 21 68 11.5 dB/°C 25 dB 74 dBc 63 69 77 86 67 76 dBc 15.4 dB RF and IF terminated into a matched impedance 14 dB Nominal differential impedance at the IC’s IF outputs 200 Ω _______________________________________________________________________________________ 3 MAX19999 +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.) (Note 8) PARAMETER SYMBOL IF Output Return Loss CONDITIONS MIN TYP RF terminated into 50Ω, LO driven by a 50Ω source, IF transformed to 50Ω using external components shown in the Typical Application Circuit 18 (Notes 6, 9) -31 RF-to-IF Isolation MAX dB 28 LO Leakage at RF Port UNITS dB -24 dBm 2LO Leakage at RF Port -30 dBm LO Leakage at IF Port -23 dBm 39 dB RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50Ω (Notes 6, 9) Channel Isolation 36 +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.) (Note 8) PARAMETER Conversion Gain SYMBOL GC Conversion Gain Flatness Gain Variation Over Temperature TCCG Input Compression Point IP1dB Third-Order Input Intercept Point CONDITIONS IIP3 Third-Order Input Intercept Variation Over Temperature MIN TYP MAX UNITS 8.0 dB fRF = 3200MHz to 3900MHz, over any 100MHz band 0.15 dB fRF = 3200MHz to 3900MHz, TC = -40°C to +85°C -0.01 dB/°C 8.4 dBm fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone 20.3 dBm fRF1 - fRF2 = 1MHz, TC = -40°C to +85°C ±0.3 dBm Noise Figure NFSSB Single sideband, no blockers present 10.5 dB Noise Figure Temperature Coefficient TCNF Single sideband, no blockers present, TC = -40°C to +85°C 0.018 dB/°C 2RF-2LO Spurious Rejection 2x2 fSPUR = fLO + 175MHz 3RF-3LO Spurious Rejection 3x3 fSPUR = fLO + 116.67MHz PRF = -10dBm 74 PRF = -5dBm 69 PRF = -10dBm 75 PRF = -5dBm 65 RF Input Return Loss LO on and IF terminated into a matched impedance LO Input Return Loss RF and IF terminated into a matched impedance 4 dBc dBc 16 dB 15.5 dB _______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer (Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.) (Note 8) PARAMETER IF Output Impedance IF Output Return Loss SYMBOL ZIF CONDITIONS MIN TYP MAX UNITS Nominal differential impedance at the IC’s IF outputs 200 Ω RF terminated into 50Ω, LO driven by a 50Ω source, IF transformed to 50Ω using external components shown in the Typical Application Circuit 19 dB RF-to-IF Isolation 28 dB LO Leakage at RF Port -36 dBm 2LO Leakage at RF Port -34 dBm LO Leakage at IF Port -27 dBm 38.5 dB Channel Isolation RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50Ω Not production tested. Guaranteed by design and characterization. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics section. Note 8: All limits reflect losses of external components, including a 0.9dB loss at fIF = 350MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 9: 100% production tested for functional performance. Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source. Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. Note 5: Note 6: Note 7: _______________________________________________________________________________________ 5 MAX19999 +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) Typical Operating Characteristics (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) 8 7 MAX19999 toc02 10 9 CONVERSION GAIN (dB) 9 CONVERSION GAIN (dB) CONVERSION GAIN (dB) MAX19999 toc01 TC = -30°C TC = +25°C CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 10 8 PLO = -3dBm, 0dBm, +3dBm MAX19999 toc03 CONVERSION GAIN vs. RF FREQUENCY 10 9 8 VCC = 4.75V, 5.0V, 5.25V 7 7 TC = +85°C 6 6 3400 3600 3800 4000 3000 3200 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 3800 3000 4000 PRF = -5dBm/TONE 26 INPUT IP3 (dBm) TC = +25°C 25 24 25 24 26 3400 3600 3800 4000 25 24 VCC = 4.75V, 5.0V, 5.25V 22 3000 RF FREQUENCY (MHz) 3400 3600 3800 3000 4000 3400 3600 3800 4000 NOISE FIGURE vs. RF FREQUENCY 13 MAX19999 toc08 12 3200 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 13 MAX19999 toc07 TC = +85°C 12 3200 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 13 4000 23 22 3200 3800 PRF = -5dBm/TONE 23 22 3600 27 PLO = -3dBm, 0dBm, +3dBm TC = -30°C 23 3400 INPUT IP3 vs. RF FREQUENCY INPUT IP3 vs. RF FREQUENCY INPUT IP3 (dBm) 26 3000 3200 RF FREQUENCY (MHz) 27 MAX19999 toc04 PRF = -5dBm/TONE 12 NOISE FIGURE (dB) TC = +25°C 11 10 9 NOISE FIGURE (dB) INPUT IP3 (dBm) 3600 RF FREQUENCY (MHz) 27 TC = +85°C 3400 MAX19999 toc09 3200 MAX19999 toc05 3000 MAX19999 toc06 6 NOISE FIGURE (dB) MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer 11 10 PLO = -3dBm, 0dBm, +3dBm 9 11 10 VCC = 4.75V, 5.0V, 5.25V 9 TC = -30°C 7 7 7 3200 3375 3550 3725 RF FREQUENCY (MHz) 6 8 8 8 3900 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 3200 3375 3550 3725 RF FREQUENCY (MHz) _______________________________________________________________________________________ 3900 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer TC = +25°C 60 PLO = 0dBm 80 70 PLO = +3dBm PLO = -3dBm 60 PRF = -5dBm 2RF-2LO RESPONSE (dBc) TC = +85°C 70 90 MAX19999 toc11 MAX19999 toc10 80 PRF = -5dBm 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) PRF = -5dBm 2RF-2LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY 90 MAX19999 toc12 2RF-2LO RESPONSE vs. RF FREQUENCY 90 80 70 60 VCC = 4.75V, 5.0V, 5.25V TC = -30°C 3000 3RF-3LO RESPONSE vs. RF FREQUENCY 3000 4000 3RF-3LO RESPONSE (dBc) 85 PRF = -5dBm 75 TC = -30°C, +25°C, +85°C 65 3200 3400 3600 3800 RF FREQUENCY (MHz) 85 75 PLO = -3dBm, 0dBm, +3dBm 65 4000 PRF = -5dBm 3400 3600 3800 RF FREQUENCY (MHz) TC = +25°C 10 9 3400 3600 3800 RF FREQUENCY (MHz) 4000 MAX19999 toc17 13 VCC = 5.25V 12 11 PLO = -3dBm, 0dBm, +3dBm 11 VCC = 5.0V VCC = 4.75V 10 9 9 3900 3200 INPUT P1dB vs. RF FREQUENCY 10 3375 3550 3725 RF FREQUENCY (MHz) VCC = 4.75V, 5.0V, 5.25V 65 3000 INPUT P1dB (dBm) INPUT P1dB (dBm) 11 3200 75 4000 12 TC = -30°C 85 INPUT P1dB vs. RF FREQUENCY MAX19999 toc16 TC = +85°C 3200 13 12 4000 55 3000 INPUT P1dB vs. RF FREQUENCY 13 3400 3600 3800 RF FREQUENCY (MHz) 95 55 3000 3200 3RF-3LO RESPONSE vs. RF FREQUENCY 3RF-3LO RESPONSE vs. RF FREQUENCY 55 INPUT P1dB (dBm) 3400 3600 3800 RF FREQUENCY (MHz) 95 MAX19999 toc13 PRF = -5dBm 3200 MAX19999 toc15 4000 3RF-3LO RESPONSE (dBc) 3400 3600 3800 RF FREQUENCY (MHz) MAX19999 toc14 3200 95 3RF-3LO RESPONSE (dBc) 50 50 3000 MAX19999 toc18 50 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900 3200 3375 3550 3725 RF FREQUENCY (MHz) _______________________________________________________________________________________ 3900 7 MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) TC = -30°C, +25°C, +85°C 30 40 PLO = -3dBm, 0dBm, +3dBm 35 3400 3600 3800 RF FREQUENCY (MHz) 4000 3000 TC = -30°C -20 -30 TC = +25°C, +85°C -40 -50 -60 MAX19999 toc23 -10 -20 -30 PLO = -3dBm, 0dBm, +3dBm -40 -50 3600 TC = -30°C 10 3000 3200 3400 LO FREQUENCY (MHz) 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 MAX19999 toc21 -20 -30 VCC = 4.75V, 5.0V, 5.25V -40 -50 2600 3600 30 PLO = -3dBm, 0dBm, +3dBm 20 10 3000 -10 RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION (dB) 20 2800 40 MAX19999 toc25 TC = +85°C TC = +25°C 4000 -60 2600 RF-TO-IF ISOLATION vs. RF FREQUENCY 3400 3600 3800 RF FREQUENCY (MHz) 0 2800 3000 3200 3400 LO FREQUENCY (MHz) 3600 RF-TO-IF ISOLATION vs. RF FREQUENCY 40 VCC = 4.75V, 5.0V, 5.25V RF-TO-IF ISOLATION (dB) 3000 3200 3400 LO FREQUENCY (MHz) 3200 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc26 2800 40 8 3000 4000 -60 2600 30 3400 3600 3800 RF FREQUENCY (MHz) 0 LO LEAKAGE AT IF PORT (dBm) MAX19999 toc22 LO LEAKAGE AT IF PORT (dBm) -10 VCC = 4.75V, 5.0V, 5.25V 35 LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY 0 3200 LO LEAKAGE AT IF PORT (dBm) 3200 40 30 30 3000 45 MAX19999 toc24 35 45 CHANNEL ISOLATION (dB) 40 50 MAX19999 toc20 MAX19999 toc19 CHANNEL ISOLATION (dB) CHANNEL ISOLATION (dB) 45 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY 50 MAX19999 toc27 CHANNEL ISOLATION vs. RF FREQUENCY 50 RF-TO-IF ISOLATION (dB) MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer 30 20 10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) _______________________________________________________________________________________ 4000 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer LO LEAKAGE AT RF PORT vs. LO FREQUENCY -40 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 3100 3500 LO FREQUENCY (MHz) -30 -40 PLO = -3dBm, 0dBm, +3dBm -20 3100 3500 LO FREQUENCY (MHz) 3900 -30 -40 3100 3500 LO FREQUENCY (MHz) -10 VCC = 4.75V, 5.0V, 5.25V -20 -30 -40 3900 2700 3100 3500 LO FREQUENCY (MHz) 3900 IF PORT RETURN LOSS vs. IF FREQUENCY 0 MAX19999 toc34 fLO = 3200MHz 5 IF PORT RETURN LOSS (dB) fIF = 350MHz 5 3900 -50 2700 RF PORT RETURN LOSS vs. RF FREQUENCY 0 3100 3500 LO FREQUENCY (MHz) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -50 -50 2700 2700 3900 -10 2LO LEAKAGE AT RF PORT (dBm) MAX19999 toc31 TC = -30°C, +25°C, +85°C -40 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -20 RF PORT RETURN LOSS (dB) 2LO LEAKAGE AT RF PORT (dBm) -10 -30 MAX19999 toc33 2700 3900 2LO LEAKAGE AT RF PORT (dBm) 3100 3500 LO FREQUENCY (MHz) MAX19999 toc32 2700 VCC = 4.75V, 5.0V, 5.25V -50 -50 -50 MAX19999 toc30 MAX19999 toc29 -30 -20 10 15 20 PLO = -3dBm, 0dBm, +3dBm 25 MAX19999 toc35 -40 PLO = -3dBm, 0dBm, +3dBm -20 -10 LO LEAKAGE AT RF PORT (dBm) -30 LO LEAKAGE AT RF PORT vs. LO FREQUENCY -10 LO LEAKAGE AT RF PORT (dBm) TC = -30°C, +25°C, +85°C -20 MAX19999 toc28 LO LEAKAGE AT RF PORT (dBm) -10 LO LEAKAGE AT RF PORT vs. LO FREQUENCY VCC = 4.75V, 5.0V, 5.25V 10 15 20 25 30 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000 50 140 230 320 410 IF FREQUENCY (MHz) 500 _______________________________________________________________________________________ 9 MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) LO PORT RETURN LOSS vs. LO FREQUENCY SUPPLY CURRENT vs. TEMPERATURE (TC) VCC = 5.25V 390 SUPPLY CURRENT (mA) 5 PLO = -3dBm 10 15 PLO = 0dBm 20 380 370 VCC = 4.75V VCC = 5.0V 360 PLO = +3dBm 25 2650 MAX19999 toc37 400 MAX19999 toc36 LO PORT RETURN LOSS (dB) 0 350 2900 3150 3400 LO FREQUENCY (MHz) 3650 -35 -15 5 25 45 TEMPERATURE (°C) 65 85 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) CONVERSION GAIN (dB) 9 8 7 9 8 7 MAX19999 toc40 VCC = 3.3V 10 CONVERSION GAIN (dB) VCC = 3.3V TC = -30°C MAX19999 toc38 TC = +25°C CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 10 MAX19999 toc39 CONVERSION GAIN vs. RF FREQUENCY 10 CONVERSION GAIN (dB) MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer 9 8 7 PLO = -3dBm, 0dBm, +3dBm VCC = 3.0V, 3.3V, 3.6V TC = +85°C 6 3200 3400 3600 RF FREQUENCY (MHz) 10 6 6 3000 3800 4000 3000 3200 3400 3600 RF FREQUENCY (MHz) 3800 4000 3000 3200 3400 3600 RF FREQUENCY (MHz) ______________________________________________________________________________________ 3800 4000 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer INPUT IP3 vs. RF FREQUENCY 21 20 21 20 18 3600 3800 4000 3200 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 3600 3800 4000 3000 MAX19999 toc44 VCC = 3.3V 11 10 9 VCC = 3.3V 11 10 PLO = -3dBm, 0dBm, +3dBm MAX19999 toc43 11 10 9 VCC = 3.0V, 3.3V, 3.6V 8 3900 7 3200 3375 RF FREQUENCY (MHz) 3550 90 MAX19999 toc47 PRF = -5dBm 2RF-2LO RESPONSE (dBc) PRF = -5dBm VCC = 3.3V TC = +85°C 70 60 VCC = 3.3V PLO = 0dBm 80 PLO = +3dBm TC = +25°C 3800 3900 PRF = -5dBm 80 VCC = 3.6V 70 60 VCC = 3.3V VCC = 3.0V 50 50 3600 3725 2RF-2LO RESPONSE vs. RF FREQUENCY 70 60 3550 90 PLO = -3dBm 50 3400 3375 RF FREQUENCY (MHz) 2RF-2LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY RF FREQUENCY (MHz) 3200 3900 RF FREQUENCY (MHz) 90 TC = -30°C 3725 MAX19999 toc49 3725 2RF-2LO RESPONSE (dBc) 3550 MAX19999 toc48 3375 3200 4000 12 7 3000 3800 13 8 7 80 3600 NOISE FIGURE vs. RF FREQUENCY 12 9 3400 TC = +25°C TC = -30°C 3200 3200 RF FREQUENCY (MHz) 13 NOISE FIGURE (dB) NOISE FIGURE (dB) 3400 NOISE FIGURE vs. RF FREQUENCY 12 8 VCC = 3.0V, 3.3V, 3.6V RF FREQUENCY (MHz) 13 TC = +85°C 20 18 3000 NOISE FIGURE (dB) 3400 MAX19999 toc45 3200 21 19 18 3000 2RF-2LO RESPONSE (dBc) 22 PLO = -3dBm, 0dBm, +3dBm 19 TC = -30°C PRF = -5dBm/TONE MAX19999 toc46 19 22 23 INPUT IP3 (dBm) TC = +25°C PRF = -5dBm/TONE VCC = 3.3V INPUT IP3 (dBm) INPUT IP3 (dBm) 22 MAX19999 toc41 PRF = -5dBm/TONE VCC = 3.3V TC = +85°C INPUT IP3 vs. RF FREQUENCY 23 MAX19999 toc42 INPUT IP3 vs. RF FREQUENCY 23 4000 3000 3200 3400 3600 RF FREQUENCY (MHz) 3800 4000 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) ______________________________________________________________________________________ 11 MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) TC = +25°C 45 75 65 PLO = -3dBm, 0dBm, +3dBm 55 45 3200 3400 3600 3800 4000 3200 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 3600 3800 4000 3000 MAX19999 toc53 VCC = 3.3V TC = +25°C VCC = 3.6V 8 PLO = -3dBm, 0dBm, +3dBm 3725 3900 3375 3550 3725 3900 40 TC = -30°C, +25°C, +85°C 30 MAX19999 toc57 VCC = 3.3V 45 40 35 PLO = -3dBm, 0dBm, +3dBm 3600 RF FREQUENCY (MHz) 3800 4000 3725 MAX19999 toc52 3900 50 45 40 VCC = 3.0V, 3.3V, 3.6V 35 30 30 3400 3550 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION (dB) 45 3200 3375 RF FREQUENCY (MHz) 50 CHANNEL ISOLATION (dB) MAX19999 toc56 VCC = 3.3V 3000 3200 RF FREQUENCY (MHz) CHANNEL ISOLATION vs. RF FREQUENCY 35 VCC = 3.3V VCC = 3.0V 6 3200 RF FREQUENCY (MHz) 50 4000 8 7 6 3550 3800 9 7 6 3600 INPUT P1dB vs. RF FREQUENCY VCC = 3.3V TC = -30°C 3400 10 INPUT P1dB (dBm) 8 3375 3200 RF FREQUENCY (MHz) 9 3200 VCC = 3.0V, 3.3V, 3.6V 55 INPUT P1dB vs. RF FREQUENCY INPUT P1dB (dBm) INPUT P1dB (dBm) 3400 10 9 7 65 RF FREQUENCY (MHz) 10 TC = +85°C 75 45 3000 MAX19999 toc54 3000 12 PRF = -5dBm MAX19999 toc58 TC = -30°C VCC = 3.3V MAX19999 toc55 65 55 PRF = -5dBm 3RF-3LO RESPONSE vs. RF FREQUENCY 85 3RF-3LO RESPONSE (dBc) TC = +85°C 75 MAX19999 toc50 VCC = 3.3V 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) PRF = -5dBm 3RF-3LO RESPONSE vs. RF FREQUENCY 85 MAX19999 toc51 3RF-3LO RESPONSE vs. RF FREQUENCY 85 CHANNEL ISOLATION (dB) MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer 3000 3200 3400 3600 RF FREQUENCY (MHz) 3800 4000 3000 3200 3400 3600 RF FREQUENCY (MHz) ______________________________________________________________________________________ 3800 4000 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer TC = +85°C -40 TC = +25°C -50 -20 -30 PLO = -3dBm, 0dBm, +3dBm -40 3000 3200 3400 3600 2600 2800 3000 LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY 3400 MAX19999 toc61 2600 3600 2800 30 TC = +25°C 3200 3400 3600 RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION vs. RF FREQUENCY VCC = 3.3V RF-TO-IF ISOLATION (dB) TC = +85°C 3000 LO FREQUENCY (MHz) 40 MAX19999 toc62 VCC = 3.3V RF-TO-IF ISOLATION (dB) VCC = 3.0V, 3.3V, 3.6V -40 LO FREQUENCY (MHz) 40 20 3200 40 PLO = -3dBm, 0dBm, +3dBm RF-TO-IF ISOLATION (dB) 2800 -30 -60 -60 2600 -20 -50 -50 -60 -10 30 20 MAX19999 toc64 -30 -10 0 LO LEAKAGE AT IF PORT (dBm) -20 VCC = 3.3V MAX19999 toc60 TC = -30°C 0 MAX19999 toc63 LO LEAKAGE AT IF PORT (dBm) VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) 0 -10 LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19999 toc59 LO LEAKAGE AT IF PORT vs. LO FREQUENCY VCC = 3.0V, 3.3V, 3.6V 30 20 TC = -30°C 10 3200 3400 3600 3800 4000 3000 3200 3400 3600 3800 3200 3400 3600 3800 LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT vs. LO FREQUENCY -30 -40 -50 -20 PLO = -3dBm, 0dBm, +3dBm -30 -40 3500 LO FREQUENCY (MHz) 3900 MAX19999 toc67 4000 -20 VCC = 3.0V, 3.3V, 3.6V -30 -40 -50 -50 3100 -10 LO LEAKAGE AT RF PORT (dBm) TC = -30°C, +25°C, +85°C VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 -10 MAX19999 toc66 RF FREQUENCY (MHz) MAX19999 toc65 RF FREQUENCY (MHz) VCC = 3.3V 2700 3000 4000 RF FREQUENCY (MHz) -10 LO LEAKAGE AT RF PORT (dBm) 10 10 3000 2700 3100 3500 LO FREQUENCY (MHz) 3900 2700 3100 3500 3900 LO FREQUENCY (MHz) ______________________________________________________________________________________ 13 MAX19999 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25°C, unless otherwise noted.) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -20 TC = -30°C, +25°C, +85°C -30 -40 -50 3100 -20 PLO = -3dBm, 0dBm, +3dBm -30 -40 -50 2700 3900 3500 3100 LO FREQUENCY (MHz) 3500 MAX19999 toc70 3100 3500 LO FREQUENCY (MHz) 15 20 fLO = 3200MHz 5 IF PORT RETURN LOSS (dB) RF PORT RETURN LOSS (dB) PLO = -3dBm, 0dBm, +3dBm VCC = 3.0V, 3.3V, 3.6V 10 15 20 25 30 3200 3400 3600 3800 140 230 320 410 RF FREQUENCY (MHz) IF FREQUENCY (MHz) LO PORT RETURN LOSS vs. LO FREQUENCY SUPPLY CURRENT vs. TEMPERATURE (TC) 300 5 PLO = 0dBm 10 PLO = -3dBm 15 20 PLO = +3dBm 2900 3150 3400 LO FREQUENCY (MHz) VCC = 3.6V 290 SUPPLY CURRENT (mA) VCC = 3.3V 25 2650 50 4000 MAX19999 toc73 30 3000 LO PORT RETURN LOSS (dB) -40 0 MAX19999 toc71 fIF = 350MHz 25 14 -30 IF PORT RETURN LOSS vs. IF FREQUENCY 5 0 VCC = 3.0V, 3.3V, 3.6V LO FREQUENCY (MHz) VCC = 3.3V 10 -20 -50 2700 3900 RF PORT RETURN LOSS vs. RF FREQUENCY 0 -10 VCC = 3.3V 500 MAX19999 toc74 2700 VCC = 3.3V MAX19999 toc72 2LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -10 MAX19999 toc68 -10 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19999 toc69 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT (dBm) MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer 280 270 VCC = 3.0V 260 250 3650 240 -35 -15 5 25 45 65 TEMPERATURE (°C) ______________________________________________________________________________________ 85 3900 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer PIN NAME FUNCTION 1 RFMAIN 2, 5, 6, 8, 12, 15, 18, 23, 28, 31, 34 GND Ground. Not internally connected. Ground these pins or leave unconnected. 3, 7, 20, 22, 24, 25, 26, 27 GND Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed pad together. 4, 10, 16, 21, 30, 36 VCC Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical Application Circuit). 9 RFDIV Diversity Channel RF Input. This input is internally matched to 50Ω. Requires a DC-blocking capacitor. 11 IFD_SET IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. 13, 14 IFD+, IFD- Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 17 LO_ADJ_D LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. 19 LO Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-blocking capacitor. 29 LO_ADJ_M LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. 32, 33 IFM-, IFM+ Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 35 IFM_SET IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. Detailed Description The MAX19999 provides high linearity and low noise figure for a multitude of 3000MHz to 4000MHz WiMAX and LTE base-station applications. This device operates over an LO range of 2650MHz to 3700MHz and an IF range of 50MHz to 500MHz. Integrated baluns and matching circuitry allow 50Ω single-ended interfaces to the RF and LO ports. The integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the MAX19999’s input to a range of -3dBm to +3dBm. The IF port incorporates a differential output, which is ideal for providing enhanced 2RF-2LO performance. RF Input and Balun The MAX19999’s two RF inputs (RFMAIN and RFDIV) provide a 50Ω match when combined with a series DCblocking capacitor. This DC-blocking capacitor is required because the input is internally DC shorted to ground through each channel’s on-chip balun. When using a 1.5pF DC-blocking capacitor, the RF port input return loss is typically 15dB over the RF frequency range of 3200MHz to 3900MHz. LO Input, Buffer, and Balun A two-stage internal LO buffer allows a wide input power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO input to the IF outputs are integrated on chip. High-Linearity Mixer The core of the MAX19999 is a pair of double-balanced, high-performance passive mixers. Exceptional ______________________________________________________________________________________ 15 MAX19999 Pin Description MAX19999 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer linearity is provided by the large LO swing from the onchip LO buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and NF performance is typically +24dBm, 74dBc, and 10.5dB, respectively, for low-side LO injection architectures covering the 3000MHz to 4000MHz RF band. Differential IF Output Amplifier The MAX19999 mixers have an IF frequency range of 50MHz to 500MHz. The differential, open-collector IF output ports require external pullup inductors to VCC. These pullup inductors are also used to resonate out the parasitic shunt capacitance of the IC, PCB components, and PCB to provide an optimized IF match at the frequency of interest. Note that differential IF outputs are ideal for providing enhanced 2RF-2LO rejection performance. Single-ended IF applications require a 4:1 balun to transform the 200Ω differential output impedance to a 50Ω single-ended output. After the balun, the IF return loss is typically 18dB. Applications Information Input and Output Matching The RF and LO inputs are internally matched to 50Ω. No matching components are required for RF frequencies ranging from 3000MHz to 4000MHz. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200Ω (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance down to a 50Ω singleended output (see the Typical Application Circuit). Reduced-Power Mode Each channel of the MAX19999 has two pins (LO_ADJ, IF_SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger valued resistors can be used to reduce power dissipation at the expense of some performance loss. If ±1% resistors are not readily available, ±5% resistors can be substituted. 16 Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of 3.3V. Doing so reduces the overall power consumption by up to 53%. See the +3.3V Supply AC Electrical Characteristics table and the relevant +3.3V curves in the Typical Operating Characteristics section to evaluate the power vs. performance trade-offs. Layout Considerations A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19999 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin with the capacitors shown in the Typical Application Circuit. Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX19999’s 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19999 is mounted be designed to conduct heat from the exposed pad. In addition, provide the exposed pad with a low-inductance path to electrical ground. The exposed pad MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer DESIGNATION QTY DESCRIPTION SUPPLIER C1, C8, C14 3 1.5pF microwave capacitors (0402) Murata Electronics North America, Inc. C4, C9, C13, C15, C17, C18 6 0.01µF microwave capacitors (0402) Murata Electronics North America, Inc. C10, C11, C12, C19, C20, C21 6 82pF microwave capacitors (0603) Murata Electronics North America, Inc. L1–L4 4 120nH wire-wound high-Q inductors* (0805) Coilcraft, Inc. 750 ±1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. Digi-Key Corp. R1, R4 2 1.1k ±1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense Digi-Key Corp. of some performance loss. See the Typical Operating Characteristics. R2, R5 698 ±1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. Digi-Key Corp. 845 ±1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. Digi-Key Corp. Digi-Key Corp. 2 R3, R6 2 0 resistors (1206). These resistors can be increased in value to reduce power dissipation in the device but will reduce the compression point. Full P1dB performance achieved using 0. T1, T2 2 4:1 IF balun TC4-1W-17+ Mini-Circuits U1 1 MAX19999 IC (36 TQFN-EP) Maxim Integrated Products, Inc. *Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details. ______________________________________________________________________________________ 17 MAX19999 Table 1. Application Circuit Component Values Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999 Typical Application Circuit C19 T1 L1* VCC IF MAIN OUTPUT C21 R3 L2* 4:1 R1 VCC RF MAIN INPUT GND GND VCC VCC C4 GND GND GND GND RFDIV RF DIV INPUT C17 28 GND LO_ADJ_M R2 29 30 VCC GND 31 IFM32 IFM+ 33 GND 34 IFM_SET 35 + RFMAIN 36 VCC C18 C1 VCC C20 27 1 MAX19999 2 26 3 25 4 24 5 23 6 22 21 7 EXPOSED PAD 8 20 9 19 GND GND GND GND GND GND VCC VCC C15 GND LO LO C14 18 17 GND VCC 16 15 GND 14 IFD- 13 IFD+ 12 GND 11 R4 LO_ADJ_D C9 IFD_SET VCC VCC 10 C8 R5 VCC C13 C11 T2 L4* VCC R6 C12 IF DIV OUTPUT L3* *USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY OF 200MHz. CONTACT THE FACTORY FOR DETAILS. 4:1 C10 18 ______________________________________________________________________________________ Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer RFMAIN 28 GND 29 LO_ADJ_M 30 VCC 31 GND 32 IFM- 33 IFM+ 34 GND 35 IFM_SET + 36 VCC TOP VIEW 1 MAX19999 27 GND 26 GND GND 2 GND 3 25 GND VCC 4 24 GND GND 5 23 GND GND 6 22 GND GND 7 21 VCC 20 GND 19 LO 15 16 17 18 VCC LO_ADJ_D GND 14 IFD- GND 13 12 GND IFD+ 11 9 IFD_SET RFDIV 10 8 VCC GND EXPOSED PAD THIN QFN-EP (6mm x 6mm) EXPOSED PAD ON THE BOTTOM OF THE PACKAGE. Package Information Chip Information PROCESS: SiGe BiCMOS For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 36 Thin QFN-EP T3666+2 21-0141 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19 © 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc. MAX19999 Pin Configuration/Functional Diagram