SHENZHENFREESCALE MC4611

Freescale
AO4611/ MC4611
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
35 @ VGS = 10V
60
50 @ VGS = 4.5V
57 @ VGS = -10V
-60
77 @ VGS = -4.5V
ID(A)
7.7
6.5
-5.0
-4.3
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
60
-60
VGS
Gate-Source Voltage
±20
±20
TA=25°C
7.7
-4.3
ID
Continuous Drain Current a
TA=70°C
6.5
-3.9
IDM
Pulsed Drain Current b
60
-60
a
I
3
-2.9
Continuous Source Current (Diode Conduction)
S
T
=25°C
2.1
2.1
A
PD
Power Dissipation a
TA=70°C
1.3
1.3
TJ, Tstg
-55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
RθJA
110
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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AO4611/ MC4611
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 20 V, VGS = 0 V
(N-ch)
VDS = -20 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 10 V
(N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 5.4 A
(N-ch)
VGS = 4.5 V, ID = 4.4 A (N-ch)
VGS = -10 V, ID = -5.2 A (P-ch)
VGS = -4.5 V, ID = -4.2 A (P-ch)
VDS = 15 V, ID = 5.4 A
(N-ch)
VDS = -15 V, ID = -5.2 A (P-ch)
IS = 1.5 A, VGS = 0 V
(N-ch)
IS = -1 A, VGS = 0 V
(P-ch)
Dynamic b
N - Channel
VDS = 30 V, VGS = 4.5 V,
ID = 5.4 A
N - Channel
VDD = 30 V, RL = 5.6 Ω, ID = 5.4 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -30 V, VGS = -4.5 V,
ID = -5.2 A
P - Channel
VDD = -30 V, RL = 5.8 Ω,
ID = -5.2 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
Min
Typ
Max
1
-1
±100
1
-1
10
-10
Unit
V
V
nA
uA
A
A
33
50
57
77
22
25
0.72
-0.77
5
3.9
8.2
8
9
49
14
1465
126
114
20
5.6
7.9
6
13
71
27
1817
129
111
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
2
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AO4611/ MC4611
Typical Electrical Characteristics - N-channel
5
0.08
4
0.06
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
3V
0.04
3.5V
0.02
3
2
1
4V,4.5V,6V,8V,10V
0
0
0
2
4
6
0
1
2
3
VGS - Gate-to-Source Voltage (V)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
100
0.1
TJ = 25°C
ID = 5.4A
TJ = 25°C
0.08
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
4
0.06
0.04
0.02
0
10
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
6
3000
F = 1MHz
10V,8V,6V,4.5V,4V
4
Capacitance (pf)
ID - Drain Current (A)
2500
3.5V
3V
2
2000
Ciss
1500
1000
500
0
Coss
Crss
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0
5
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
3
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AO4611/ MC4611
Typical Electrical Characteristics - N-channel
2.5
VDS = 30V
9
ID = 5.4A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
7
6
5
4
3
2
1
2
1.5
1
0.5
0
-50
0
10
20
30
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
1000
10 uS
100
100 uS
1 mS
ID Current (A)
-25
40
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
DC
1
0.1
Idm limit
80
60
40
20
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
0.01
P(pk)
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
4
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AO4611/ MC4611
Typical Electrical Characteristics - P-channel
5
TJ = 25°C
4
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
0.15
0.1
3V
3.5V
0.05
3
2
1
4V,4.5V,6V,8V,10V
0
0
0
2
4
ID-Drain Current (A)
0
6
1
1. On-Resistance vs. Drain Current
3
4
2. Transfer Characteristics
100
0.2
TJ = 25°C
ID = -5.2A
0.18
TJ = 25°C
IS - Source Current (A)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
10
1
0.1
0.02
0
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
3000
6
F = 1MHz
10V,8V,6V,4.5V,4V
2500
3.5V
4
Capacitance (pf)
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
3V
2
Ciss
2000
1500
1000
500
0
Coss
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
5
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Freescale
AO4611/ MC4611
Typical Electrical Characteristics - P-channel
2.5
VDS = -30V
9
ID = -5.2A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
7
6
5
4
3
2
2
1.5
1
1
0
0.5
0
10
20
30
40
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
1000
PEAK TRANSIENT POWER (W)
120
10 uS
100
100 uS
1 mS
ID Current (A)
0
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
DC
1
0.1
Idm limit
Limited by
RDS
100
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
0.01
P(pk)
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
6
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Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
7
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