MICROCHIP MCP6285-E/MS

MCP6281/1R/2/3/4/5
450 µA, 5 MHz Rail-to-Rail Op Amp
Features
Description
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The Microchip Technology Inc. MCP6281/1R/2/3/4/5
family of operational amplifiers (op amps) provide wide
bandwidth for the current. This family has a 5 MHz Gain
Bandwidth Product (GBWP) and a 65° phase margin.
This family also operates from a single supply voltage
as low as 2.2V, while drawing 450 µA (typical) quiescent
current. Additionally, the MCP6281/1R/2/3/4/5 supports
rail-to-rail input and output swing, with a common mode
input voltage range of VDD + 300 mV to VSS – 300 mV.
This family of operational amplifiers is designed with
Microchip’s advanced CMOS process.
Gain Bandwidth Product: 5 MHz (typical)
Supply Current: IQ = 450 µA (typical)
Supply Voltage: 2.2V to 6.0V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in Single, Dual, and Quad Packages
Single with CS (MCP6283)
Dual with CS (MCP6285)
Applications
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The MCP6285 has a Chip Select (CS) input for dual op
amps in an 8-pin package. This device is manufactured
by cascading the two op amps (the output of op amp A
connected to the non-inverting input of op amp B). The
CS input puts the device in Low-power mode.
Automotive
Portable Equipment
Photodiode Amplifier
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
The MCP6281/1R/2/3/4/5 family operates over the
Extended Temperature Range of -40°C to +125°C. It
also has a power supply range of 2.2V to 6.0V.
Design Aids
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SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer & Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
NC 1
VIN
_
MCP6281
SOT-23-5
8 NC
2
VIN+ 3
VSS 4
7 VDD
VSS 2
6 VOUT
5 NC
MCP6283
PDIP, SOIC, MSOP
NC 1
VSS 4
8 CS
+
7 VDD
6 VOUT
5 NC
MCP6283
VOUT 1
VSS 2
VIN+ 3
6 VDD
-
VIN+ 3
5 CS
_
4 VIN
VOUTA 1
_
14 VOUTD
- + + - 13 VIND_
VINA+ 3
12 VIND+
11 VSS
VDD 4
VINB+ 5
VINB_ 6
VOUTB 7
© 2008 Microchip Technology Inc.
4 VIN–
2
VINA
VINA_ 2
-
MCP6284
PDIP, SOIC, TSSOP
SOT-23-6
+
VIN_ 2
VIN+ 3
VDD 2
-
VOUTA 1
5 VSS
VOUT 1
4 VIN–
VIN+ 3
MCP6282
PDIP, SOIC, MSOP
SOT-23-5
5 VDD
VOUT 1
+
+
MCP6281R
+
MCP6281
PDIP, SOIC, MSOP
10 VINC+
VINA+ 3
8 VDD
7 VOUTB
- +
+ -
VSS 4
6 VINB_
5 VINB+
MCP6285
PDIP, SOIC, MSOP
VOUTA/VINB+ 1
VINA_ 2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
- +
+ -
_
6 VINB
5 CS
-+ +- 9 V _
INC
8 VOUTC
DS21811E-page 1
MCP6281/1R/2/3/4/5
1.0
ELECTRICAL
CHARACTERISTICS
VDD – VSS ........................................................................7.0V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Current at Input Pins ....................................................±2 mA
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
Analog Inputs (VIN+, VIN–) †† ........ VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short Circuit Current .................................Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature....................................–65°C to +150°C
Maximum Junction Temperature (TJ) ......................... .+150°C
ESD Protection On All Pins (HBM; MM) .............. ≥ 4 kV; 400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25 C, VDD = +2.2V to +5.5V, VSS = GND, VOUT ≈ VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset Voltage
VOS
-3.0
—
+3.0
mV
VCM = VSS (Note 1)
Input Offset Voltage
(Extended Temperature)
VOS
-5.0
—
+5.0
mV
TA= -40°C to +125°C,
VCM = VSS (Note 1)
Input Offset Temperature Drift
ΔVOS/ΔTA
—
±1.7
—
Power Supply Rejection Ratio
PSRR
70
90
—
Input Offset
µV/°C TA= -40°C to +125°C,
VCM = VSS (Note 1)
dB
VCM = VSS (Note 1)
Input Bias, Input Offset Current and Impedance
IB
—
±1.0
—
pA
Note 2
At Temperature
IB
—
50
200
pA
TA= +85°C (Note 2)
At Temperature
IB
—
2
5
nA
TA= +125°C (Note 2)
Input Bias Current
Input Offset Current
IOS
—
±1.0
—
pA
Note 3
Common Mode Input Impedance
ZCM
—
1013||6
—
Ω||pF
Note 3
Differential Input Impedance
ZDIFF
—
1013||3
—
Ω||pF
Note 3
Common Mode (Note 4)
Common Mode Input Range
VCMR
VSS − 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
70
85
—
dB
VCM = -0.3V to 2.5V, VDD = 5V
Common Mode Rejection Ratio
CMRR
65
80
—
dB
VCM = -0.3V to 5.3V, VDD = 5V
AOL
90
110
—
dB
VOUT = 0.2V to VDD – 0.2V,
VCM = VSS (Note 1)
VOL, VOH
VSS + 15
—
VDD – 15
mV
0.5V input overdrive
ISC
—
±25
—
mA
VDD
2.2
—
6.0
V
(Note 5)
IQ
300
450
570
µA
IO = 0
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
3:
4:
5:
The MCP6285’s VCM for op amp B (pins VOUTA/VINB+ and VINB–) is VSS + 100 mV.
The current at the MCP6285’s VINB– pin is specified by IB only.
This specification does not apply to the MCP6285’s VOUTA/VINB+ pin.
The MCP6285’s VINB– pin (op amp B) has a common mode range (VCMR) of VSS + 100 mV to VDD – 100 mV.
The MCP6285’s VOUTA/VINB+ pin (op amp B) has a voltage range specified by VOH and VOL.
All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 2.4V and/or 5.5V.
DS21811E-page 2
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VOUT ≈ VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
MHz
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
5.0
—
Phase Margin at Unity-Gain
PM
—
65
—
°
Slew Rate
SR
—
2.5
—
V/µs
Input Noise Voltage
Eni
—
5.2
—
µVP-P
Input Noise Voltage Density
eni
—
16
—
nV/√Hz
f = 1 kHz
Input Noise Current Density
ini
—
3
—
fA/√Hz
f = 1 kHz
G = +1 V/V
Noise
f = 0.1 Hz to 10 Hz
MCP6283/MCP6285 CHIP SELECT (CS) SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VOUT ≈ VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
0.2 VDD
V
CS Input Current, Low
ICSL
—
0.01
—
µA
CS Logic Threshold, High
VIH
0.8 VDD
—
VDD
V
CS Input Current, High
ICSH
—
0.7
2
µA
CS = VDD
GND Current per Amplifier
ISS
—
-0.7
—
µA
CS = VDD
Amplifier Output Leakage
—
—
0.01
—
µA
CS = VDD
CS Low to Valid Amplifier
Output, Turn-on Time
tON
—
4
10
µs
CS Low ≤ 0.2 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.9 VDD/2,
VDD = 5.0V
CS High to Amplifier Output High-Z
tOFF
—
0.01
—
µs
CS High ≥ 0.8 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.1 VDD/2
VHYST
—
0.6
—
V
VDD = 5V
CS Low Specifications
CS = VSS
CS High Specifications
Dynamic Specifications (Note 1)
Hysteresis
Note 1:
The input condition (VIN) specified applies to both op amp A and B of the MCP6285. The dynamic specification is tested
at the output of op amp B (VOUTB).
CS
VIL
VIH
tOFF
tON
VOUT
ISS
ICS
Hi-Z
Hi-Z
-0.7 µA
(typical)
0.7 µA
(typical)
-450 µA
(typical)
10 nA
(typical)
-0.7 µA
(typical)
0.7 µA
(typical)
FIGURE 1-1:
Timing Diagram for the Chip
Select (CS) pin on the MCP6283 and MCP6285.
© 2008 Microchip Technology Inc.
DS21811E-page 3
MCP6281/1R/2/3/4/5
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT-23
θJA
—
256
—
°C/W
Thermal Resistance, 6L-SOT-23
θJA
—
230
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
206
—
°C/W
Conditions
Temperature Ranges
Note
Thermal Package Resistances
Thermal Resistance, 14L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Note:
1.1
The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-2. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VDD
VIN
RN
0.1 µF 1 µF
VOUT
MCP628X
CL
VDD/2 RG
RL
RF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
VDD/2
RN
0.1 µF 1 µF
VOUT
MCP628X
CL
VIN
RG
RL
RF
VL
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS21811E-page 4
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
30%
832 Samples
VCM = VSS
10%
8%
6%
4%
2%
20%
15%
10%
5%
0%
2.8
2.4
2.0
1.6
-10
-8
Input Offset Voltage (mV)
FIGURE 2-4:
35%
70
80
90
Input Offset Voltage Drift.
210 Samples
TA = +125°C
25%
20%
15%
10%
5%
0%
100
Input Bias Current (pA)
FIGURE 2-2:
TA = +85 °C.
Input Bias Current (pA)
FIGURE 2-5:
TA = +125 °C.
Input Bias Current at
300
VDD = 2.2V
Input Offset Voltage (µV)
250
200
150
100
50
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0
-50
VDD = 5.5V
200
150
100
50
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0
-50
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 2.2V.
© 2008 Microchip Technology Inc.
6.0
5.5
5.0
4.5
4.0
2.5
3.5
2.0
3.0
1.5
2.5
1.0
2.0
0.5
Common Mode Input Voltage (V)
1.0
0.0
0.5
-100
0.0
-100
-0.5
Input Bias Current at
250
-0.5
Input Offset Voltage (µV)
300
10
3600
60
8
3200
50
6
2800
0%
40
4
2400
5%
30
2
2000
10%
20
0
1600
15%
10
-2
1200
20%
30%
0
210 Samples
TA = +85°C
Percentage of Occurrences
Percentage of Occurrences
25%
0
-4
800
Input Offset Voltage.
200
FIGURE 2-1:
-6
Input Offset Voltage Drift (µV/°C)
400
1.2
0.8
0.4
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0%
832 Samples
VCM = VSS
TA = -40°C to +125°C
25%
1.5
12%
Percentage of Occurrences
Percentage of Occurrences
14%
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 5.5V.
DS21811E-page 5
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
10,000
VCM = VSS
Representative Part
250
Input Bias, Offset Currents
(pA)
Input Offset Voltage (µV)
300
200
150
100
50
0
VDD = 5.5V
VDD = 2.2V
-50
-100
VCM = VDD
VDD = 5.5V
1,000
Input Bias Current
100
Input Offset Current
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
25
35
45
Output Voltage (V)
FIGURE 2-7:
Output Voltage.
55
65
75
85
95
105 115 125
Ambient Temperature (°C)
Input Offset Voltage vs.
FIGURE 2-10:
Input Bias, Input Offset
Currents vs. Ambient Temperature.
120
110
PSRRCMRR
90
110
PSRR, CMRR (dB)
CMRR, PSRR (dB)
100
PSRR+
80
70
60
50
40
CMRR
100
90
PSRR
VCM = VSS
80
70
30
20
60
1.E+00
1.E+01
1
1.E+02
10
1.E+03
100
1.E+04
1k
1.E+05
10k
1.E+06
100k
-50
1M
-25
Frequency (Hz)
FIGURE 2-8:
Frequency.
CMRR, PSRR vs.
FIGURE 2-11:
Temperature.
2.5
45
Input Bias, Offset Currents
(nA)
Input Bias, Offset Currents
(pA)
55
Input Bias Current
35
25
15
5
Input Offset Current
-5
TA = +85°C
VDD = 5.5V
-15
0
25
50
75
100
125
Ambient Temperature (°C)
2.0
CMRR, PSRR vs. Ambient
TA = +125°C
VDD = 5.5V
1.5
Input Bias Current
1.0
0.5
0.0
Input Offset Current
-0.5
-1.0
-25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
FIGURE 2-9:
Input Bias, Offset Currents
vs. Common Mode Input Voltage at TA = +85°C.
DS21811E-page 6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
FIGURE 2-12:
Input Bias, Offset Currents
vs. Common Mode Input Voltage at TA = +125°C.
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
500
400
300
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1000
100
10
VOL - VSS
VDD - VOH
1
0.01
0.1
Power Supply Voltage (V)
0
100
-30
-90
Phase
0
-180
90
VDD = 5.5V
5
85
VDD = 2.2V
Gain Bandwidth Product
4
3
2
70
VDD = 2.2V
Phase Margin
1
65
-50
-25
0
25
50
75
100
60
125
Ambient Temperature (°C)
Open-Loop Gain, Phase vs.
FIGURE 2-17:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
10
4.5
4.0
VDD = 5.5V
Slew Rate (V/µs)
Maximum Output Voltage
Swing (VP-P)
75
VDD = 5.5V
Frequency (Hz)
FIGURE 2-14:
Frequency.
80
0
-210
10k 100k 1M 10M 100M
1.E+08
1k
1.E+07
100
1.E+06
10
1.E+05
1
1.E+04
0.1
1.E+03
-150
1.E+02
20
1.E+01
-120
1.E+00
40
Gain Bandwidth Product
(MHz)
-60
Open-Loop Phase (°)
6
Gain
80
1.E-01
Open-Loop Gain (dB)
120
-20
10
FIGURE 2-16:
Output Voltage Headroom
vs. Output Current Magnitude.
FIGURE 2-13:
Quiescent Current vs.
Power Supply Voltage.
60
1
Output Current Magnitude (mA)
Phase Margin (°)
200
Ouput Voltage Headroom (mV)
Quiescent Current
(µA/amplifier)
600
VDD = 2.2V
1
3.5
Falling Edge, VDD = 2.2V
Falling Edge, VDD = 5.5V
3.0
2.5
2.0
1.5
Rising Edge, VDD = 5.5V
Rising Edge, VDD = 2.2V
1.0
0.5
1M
1.E+07
100k
1.E+06
10k
1.E+05
1k
1.E+04
1.E+03
0.0
0.1
10M
-50
-25
FIGURE 2-15:
Maximum Output Voltage
Swing vs. Frequency.
© 2008 Microchip Technology Inc.
0
25
50
75
100
125
Ambient Temperature (°C)
Frequency (Hz)
FIGURE 2-18:
Temperature.
Slew Rate vs. Ambient
DS21811E-page 7
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
30
Input Noise Voltage Density
(nV/√Hz)
Input Noise Voltage Density
(nV/√Hz)
1,000
100
10
1.E-01
1.E+00
0.1
1
1.E+01
1.E+02
10
100
1.E+03
1.E+04
1k
10k
1.E+05
1.E+06
100k
f = 1 kHz
VDD = 5.0V
25
20
15
10
5
0
0.0
1M
0.5
Frequency (Hz)
FIGURE 2-19:
vs. Frequency.
Input Noise Voltage Density
30
25
20
15
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.5
4.0
4.5
5.0
3.0
3.5
4.0
4.5
5.0
130
120
110
100
5.5
1
10
100
Frequency (kHz)
FIGURE 2-20:
Output Short Circuit Current
vs. Power Supply Voltage.
FIGURE 2-23:
Channel-to-Channel
Separation vs. Frequency (MCP6282 and
MCP6284 only).
1000
Op-Amp shuts off here
450
900
Quiescent Current
(µA/Amplifier)
Op-Amp turns on here
400
350
300
250
Hysteresis
200
150
CS swept
high to low
100
CS swept
low to high
VDD = 5.5V
800
Hysteresis
700
500
400
300
200
100
VDD = 2.2V
CS swept
low to high
600
CS swept
high to low
500
Quiescent Current
(µA/Amplifier)
2.5
140
Power Supply Voltage (V)
50
2.0
FIGURE 2-22:
Input Noise Voltage Density
vs. Common Mode Input Voltage at 1 kHz.
Channel-to-Channel Separation
(dB)
Ouptut Short Circuit Current
(mA)
35
10
1.0
Common Mode Input Voltage (V)
Op Amp toggles On/Off here
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Chip Select Voltage (V)
FIGURE 2-21:
Quiescent Current vs.
Chip Select (CS) Voltage at VDD = 2.2V
(MCP6283 and MCP6285 only).
DS21811E-page 8
2.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Chip Select Voltage (V)
FIGURE 2-24:
Quiescent Current vs.
Chip Select (CS) Voltage at VDD = 5.5V
(MCP6283 and MCP6285 only).
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
5.0
5.0
G = +1V/V
VDD = 5.0V
4.5
Output Voltage (V)
Output Voltage (V)
3.5
3.0
2.5
2.0
1.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
G = -1V/V
VDD = 5.0V
4.5
4.0
0.E+00
2.E-06
4.E-06
6.E-06
8.E-06
1.E-05
1.E-05
1.E-05
2.E-05
2.E-05
0.0
2.E-05
0.E+00
2.E-06
4.E-06
6.E-06
8.E-06
FIGURE 2-25:
Pulse Response.
Large-Signal, Non-inverting
FIGURE 2-28:
Pulse Response.
Output Voltage (10 mV/div)
Output Voltage (10 mV/div)
G = +1V/V
Small-Signal, Non-inverting
FIGURE 2-29:
Pulse Response.
2.E-05
2.E-05
2.E-05
Large-Signal, Inverting
Small-Signal, Inverting
6.0
VDD = 2.2V
G = +1V/V
VIN = VSS
CS Voltage
2.0
Chip Select, Output Voltages
(V)
Chip Select, Output Voltages
(V)
1.E-05
Time (500 ns/div)
2.5
1.5
VOUT
Output On
1.0
0.5
Output High-Z
0.0
1.E-05
G = -1V/V
Time (500 ns/div)
FIGURE 2-26:
Pulse Response.
1.E-05
Time (2 µs/div)
Time (2 µs/div)
0.0E+00
5.0E-06
1.0E-05
1.5E-05
2.0E-05
2.5E-05
3.5E-05
4.0E-05
4.5E-05
4.5
4.0
3.5
VOUT
3.0
2.5
2.0
1.5
1.0
Output High-Z
Output On
0.5
0.E+00
5.E-06
1.E-05
2.E-05
2.E-05
3.E-05
3.E-05
4.E-05
4.E-05
5.E-05
5.E-05
5.0E-05
Time (5 µs/div)
FIGURE 2-27:
Chip Select (CS) to
Amplifier Output Response Time at VDD = 2.2V
(MCP6283 and MCP6285 only).
© 2008 Microchip Technology Inc.
CS Voltage
5.0
0.0
3.0E-05
VDD = 5.5V
G = +1V/V
VIN = VSS
5.5
Time (5 µs/div)
FIGURE 2-30:
Chip Select (CS) to
Amplifier Output Response Time at VDD = 5.5V
(MCP6283 and MCP6285 only).
DS21811E-page 9
MCP6281/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS is tied low.
6
+125°C
+85°C
+25°C
-40°C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-31:
Measured Input Current vs.
Input Voltage (below VSS).
DS21811E-page 10
Input, Output Voltage (V)
Input Current Magnitude (A)
1.E-02
10m
1.E-03
1m
1.E-04
100µ
1.E-05
10µ
1.E-06
1µ
100n
1.E-07
10n
1.E-08
1n
1.E-09
100p
1.E-10
10p
1.E-11
1p
1.E-12
VDD = 5.0V
G = +2 V/V
5
4
VOUT
VIN
3
2
1
0
-1
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
Time (1 ms/div)
FIGURE 2-32:
The MCP6281/1R/2/3/4/5
Show No Phase Reversal.
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1 (single op amps) and Table 3-2 (dual and quad op amps).
TABLE 3-1:
PIN FUNCTION TABLE FOR SINGLE OP AMPS
MCP6281
MCP6281R
MCP6283
Symbol
PDIP, SOIC,
MSOP
SOT-23-5
SOT-23-5
PDIP, SOIC,
MSOP
SOT-23-6
6
2
3
7
4
—
1,5,8
1
4
3
5
2
—
—
1
4
3
2
5
—
—
6
2
3
7
4
8
1,5
1
4
3
6
2
5
—
TABLE 3-2:
VOUT
VIN–
VIN+
VDD
VSS
CS
NC
MCP6284
MCP6285
Symbol
PDIP, SOIC, MSOP
PDIP, SOIC, TSSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
—
—
3.1
—
Analog Outputs
Analog Inputs
The non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents.
3.3
MCP6285’s VOUTA/VINB+ Pin
For the MCP6285 only, the output of op amp A is
connected directly to the non-inverting input of
op amp B; this is the VOUTA/VINB+ pin. This connection
makes it possible to provide a Chip Select pin for duals
in 8-pin packages.
© 2008 Microchip Technology Inc.
Description
PDIP, SOIC, MSOP
The output pins are low-impedance voltage sources.
3.2
Analog Output
Inverting Input
Non-inverting Input
Positive Power Supply
Negative Power Supply
Chip Select
No Internal Connection
PIN FUNCTION TABLE FOR DUAL AND QUAD OP AMPS
MCP6282
1
2
3
8
5
6
7
—
—
—
4
—
—
—
—
Description
—
2
3
8
—
6
7
—
—
—
4
—
—
—
1
VOUTA
VINA–
VINA+
VDD
VINB+
VINB–
VOUTB
VOUTC
VINC–
VINC+
VSS
VIND+
VIND–
VOUTD
VOUTA/
VINB+
CS
5
3.4
Analog Output (op amp A)
Inverting Input (op amp A)
Non-inverting Input (op amp A)
Positive Power Supply
Non-inverting Input (op amp B)
Inverting Input (op amp B)
Analog Output (op amp B)
Analog Output (op amp C)
Inverting Input (op amp C)
Non-inverting Input (op amp C)
Negative Power Supply
Non-inverting Input (op amp D)
Inverting Input (op amp D)
Analog Output (op amp D)
Analog Output (op amp A)/Noninverting Input (op amp B)
Chip Select
Chip Select Digital Input (CS)
This is a CMOS, Schmitt-triggered input that places the
part into a low-power mode of operation.
3.5
Power Supply Pins
The positive power supply (VDD) is 2.2V to 6.0V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
DS21811E-page 11
MCP6281/1R/2/3/4/5
4.0
APPLICATION INFORMATION
The MCP6281/1R/2/3/4/5 family of op amps is manufactured using Microchip's state-of-the-art CMOS
process. This family is specifically designed for lowcost, low-power and general purpose applications.
The low supply voltage, low quiescent current and
wide bandwidth makes the MCP6281/1R/2/3/4/5 ideal
for battery-powered applications.
VDD, and dump any currents onto VDD. When
implemented as shown, resistors R1 and R2 also limit
the current through D1 and D2.
VDD
D1
D2
V1
4.1
R1
Rail-to-Rail Inputs
4.1.1
V2
PHASE REVERSAL
R2
The MCP6281/1R/2/3/4/5 op amp is designed to
prevent phase reversal when the input pins exceed the
supply voltages. Figure 2-32 shows the input voltage
exceeding the supply voltage without any phase
reversal.
4.1.2
R3
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
VDD Bond
Pad
VIN+ Bond
Pad
Input
Stage
Bond
VIN–
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these op amps, the circuit they are in must limit the
currents and voltages at the VIN+ and VIN– pins (see
Absolute Maximum Ratings † at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-2
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(VIN+ and VIN–) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pins. Diodes D1 and D2 prevent the
input pins (VIN+ and VIN–) from going too far above
DS21811E-page 12
MCP628X
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of
resistors R1 and R2. In this case, current through the
diodes D1 and D2 needs to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN–) should be very small.
A significant amount of current can flow out of the
inputs when the common mode voltage (VCM) is below
ground (VSS); see Figure 2-31. Applications that are
high impedance may need to limit the usable voltage
range.
4.1.3
NORMAL OPERATION
The input stage of the MCP6281/1R/2/3/4/5 op amps
use two differential CMOS input stages in parallel. One
operates at low common mode input voltage (VCM),
while the other operates at high VCM. WIth this
topology, the device operates with VCM up to 0.3V
above VDD and 0.3V below VSS.
There is a transition in input behavior as VCM is
changed. It occurs when VCM is near VDD – 1.2V (see
Figure 2-3 and Figure 2-6). For the best distortion
performance with non-inverting gains, avoid these
regions of operation.
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
4.2
Rail-to-Rail Output
The output voltage range of the MCP6281/1R/2/3/4/5
op amp is VDD – 15 mV (min.) and VSS + 15 mV (max.)
when RL = 10 kΩ is connected to VDD/2 and
VDD = 5.5V. Refer to Figure 2-16 for more information.
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Modify RISO's value until the
response is reasonable. Bench evaluation and simulations with the MCP6281/1R/2/3/4/5 SPICE macro
model are helpful.
4.3
4.4
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity-gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-3) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will generally be lower than the bandwidth
with no capacitive load.
–
RISO
MCP628X
VIN
VOUT
+
CL
MCP628X Chip Select (CS)
The MCP6283 and MCP6285 are single and dual op
amps with Chip Select (CS), respectively. When CS is
pulled high, the supply current drops to 0.7 µA (typical)
and flows through the CS pin to VSS. When this happens, the amplifier output is put into a high-impedance
state. By pulling CS low, the amplifier is enabled. The
CS pin has an internal 5 MΩ (typical) pull-down resistor
connected to VSS, so it will go low if the CS pin is left
floating. Figure 1-1 shows the output voltage and
supply current response to a CS pulse.
4.5
Cascaded Dual Op Amps
(MCP6285)
The MCP6285 is a dual op amp with Chip Select (CS).
The Chip Select input is available on what would be the
non-inverting input of a standard dual op amp (pin 5).
This pin is available because the output of op amp A
connects to the non-inverting input of op amp B, as
shown in Figure 4-5. The Chip Select input, which can
be connected to a microcontroller I/O line, puts the
device in Low-power mode. Refer to Section 4.4
“MCP628X Chip Select (CS)”.
VINB–
VOUTA/VINB+
FIGURE 4-3:
Output Resistor, RISO
stabilizes large capacitive loads.
Figure 4-4 gives recommended RISO values for different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
1
VINA–
VINA+
6
2
B
3
7
VOUTB
A
MCP6285
5
CS
Recommended RISO (:)
1,000
FIGURE 4-5:
The output of op amp A is loaded by the input impedance of op amp B, which is typically 1013Ω||6 pF, as
specified in the DC specification table (Refer to
Section 4.3 “Capacitive Loads” for further details
regarding capacitive loads).
100
GN = 1 V/V
GN = 2 V/V
GN t 4 V/V
10
10
100
1,000
10,000
Normalized Load Capacitance; CL / GN (pF)
FIGURE 4-4:
Recommended RISO Values
for Capacitive Loads.
© 2008 Microchip Technology Inc.
Cascaded Gain Amplifier.
The common mode input range of these op amps is
specified in the data sheet as VSS – 300 mV and
VDD + 300 mV. However, since the output of op amp A
is limited to VOL and VOH (20 mV from the rails with a
10 kΩ load), the non-inverting input range of op amp B
is limited to the common mode input range of
VSS + 20 mV and VDD – 20 mV.
DS21811E-page 13
MCP6281/1R/2/3/4/5
4.6
Supply Bypass
VIN–
With this family of operational amplifiers, the power
supply pin (VDD for single-supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good, high-frequency performance. It also needs a
bulk capacitor (i.e., 1 µF or larger) within 100 mm to
provide large, slow currents. This bulk capacitor can be
shared with nearby analog parts.
4.7
Unused Op Amps
VDD
VDD
VREF
R2
FIGURE 4-7:
for Inverting Gain.
1.
¼ MCP6284 (B)
VDD
R1
VSS
Guard Ring
An unused op amp in a quad package (MCP6284)
should be configured as shown in Figure 4-6. These
circuits prevent the output from toggling and causing
crosstalk. Circuits A sets the op amp at its minimum
noise gain. The resistor divider produces any desired
reference voltage within the output voltage range of the
op amp; the op amp buffers that reference voltage.
Circuit B uses the minimum number of components
and operates as a comparator, but it may draw more
current.
¼ MCP6284 (A)
VIN+
2.
Example Guard Ring Layout
For Inverting Gain and Transimpedance
Amplifiers (convert current to voltage, such as
photo detectors):
a. Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b. Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
Non-inverting Gain and Unity-Gain Buffer:
a. Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b. Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
common mode input voltage.
R2
V REF = V DD ⋅ -----------------R1 + R2
FIGURE 4-6:
4.8
Unused Op Amps.
PCB Surface Leakage
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface-leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA of current to flow, which is greater than the
MCP6281/1R/2/3/4/5 family’s bias current at +25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
DS21811E-page 14
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
4.9
Application Circuits
4.9.1
4.9.3
SALLEN-KEY HIGH-PASS FILTER
The MCP6281/1R/2/3/4/5 op amps can be used in
active-filter applications. Figure 4-8 shows a secondorder Sallen-Key high-pass filter with a gain of 1. The
output bias voltage is set by the VDD/2 reference, which
can be changed to any voltage within the output voltage
range.
R1
VIN
CASCADED OP AMP
APPLICATIONS
The MCP6285 provides the flexibility of Low-power
mode for dual op amps in an 8-pin package. The
MCP6285 eliminates the added cost and space in
battery-powered applications by using two single op
amps with Chip Select lines or a 10-pin device with one
Chip Select line for both op amps. Since the two op
amps are internally cascaded, this device cannot be
used in circuits that require active or passive elements
between the two op amps. However, there are several
applications where this op amp configuration with
Chip Select line becomes suitable. The circuits below
show possible applications for this device.
+
C1
C2
MCP6281
R2
–
VOUT
VDD/2
FIGURE 4-8:
Sallen-Key High-Pass Filter.
4.9.3.1
Load Isolation
With the cascaded op amp configuration, op amp B can
be used to isolate the load from op amp A. In applications where op amp A is driving capacitive or low resistance loads in the feedback loop (such as an integrator
circuit or filter circuit), the op amp may not have
sufficient source current to drive the load. In this case,
op amp B can be used as a buffer.
This filter, and others, can be designed using
Microchip’s Design Aids; see Section 5.2 “FilterLab®
Software” and Section 5.3 “Mindi™ Circuit
Designer & Simulator”.
B
4.9.2
INVERTING MILLER INTEGRATOR
Analog integrators are used in filters, control loops and
measurement circuits. Figure 4-9 shows the most
common implementation, the inverting Miller integrator.
The non-inverting input is at VDD/2 so that the op amp
properly biases up. The switch (SW) is used to zero the
output in some applications. Other applications use a
feedback loop to keep the output within its linear range
of operation.
SW
R
C
VOUT
VIN
+
VDD/2
MCP6281
–
MCP6285
Load
CS
FIGURE 4-10:
Buffer.
4.9.3.2
Isolating the Load with a
Cascaded Gain
Figure 4-11 shows a cascaded gain circuit configuration with Chip Select. Op amps A and B are configured
in a non-inverting amplifier configuration. In this
configuration, it is important to note that the input offset
voltage of op amp A is amplified by the gain of
op amp A and B, as shown below:
V OUT = V IN G A G B + V OSA G A G B + V OSB G B
VOUT
1
=
sRC
VIN
FIGURE 4-9:
VOUTB
A
Miller Integrator.
Where:
GA
=
op amp A gain
GB
=
op amp B gain
VOSA
=
op amp A input offset voltage
VOSB
=
op amp B input offset voltage
Therefore, it is recommended to set most of the gain
with op amp A and use op amp B with relatively small
gain (e.g., a unity-gain buffer).
© 2008 Microchip Technology Inc.
DS21811E-page 15
MCP6281/1R/2/3/4/5
R4
R3
R2
R2
R1
C2
RF
B
A
VIN
VOUT
4.9.3.3
FIGURE 4-13:
Buffered Non-inverting
Integrator with Chip Select.
Cascaded Gain Circuit
4.9.3.5
Difference Amplifier
R4
R2
CS
R 1 C 1 = ( R 2 || R F )C 2
Figure 4-12 shows op amp A configured as a difference
amplifier with Chip Select. In this configuration, it is
recommended to use well-matched resistors (e.g.,
0.1%) to increase the Common Mode Rejection Ratio
(CMRR). Op amp B can be used to provide additional
gain and isolate the load from the difference amplifier.
VIN1
MCP6285
MCP6285
FIGURE 4-11:
Configuration.
R3
Inverting Integrator with Active
Compensation and Chip Select
Figure 4-14 uses an active compensator (op amp B) to
compensate for the non-ideal op amp characteristics
introduced at higher frequencies. This circuit uses
op amp B as a unity-gain buffer to isolate the integration
capacitor C1 from op amp A and drives the capacitor
with low-impedance source. Since both op amps are
matched very well, they provide a higher quality
integrator.
R1
B
R2
A
VOUT
VIN
C1
R1
B
MCP6285
R1
VOUT
A
CS
FIGURE 4-12:
4.9.3.4
VOUT
B
A
C1
CS
VIN2
VIN
R1
MCP6285
Difference Amplifier Circuit.
CS
Buffered Non-inverting Integrator
Figure 4-13 shows a lossy non-inverting integrator that
is buffered and has a Chip Select input. Op amp A is
configured as a non-inverting integrator. In this configuration, matching the impedance at each input is
recommended. RF is used to provide a feedback loop
at frequencies << 1/(2πR1C1) and makes this a lossy
integrator (it has a finite gain at DC). Op amp B is used
to isolate the load from the integrator.
DS21811E-page 16
FIGURE 4-14:
Compensation.
4.9.3.6
Integrator Circuit with Active
Second-Order MFB Low-Pass Filter
with an Extra Pole-Zero Pair
Figure 4-15 is a second-order multiple feedback lowpass filter with Chip Select. Use the FilterLab® software
from Microchip to determine the R and C values for the
op amp A’s second-order filter. Op amp B can be used
to add a pole-zero pair using C3, R6, and R7.
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
4.9.3.8
R6
R1
C1
R3
C3
R7
R2
VIN
R5
C2
B
A
VOUT
MCP6285
R4
CS
FIGURE 4-15:
Second-Order Multiple
Feedback Low-Pass Filter with an Extra
Pole-Zero Pair.
4.9.3.7
Capacitorless Second-Order
Low-Pass filter with Chip Select
Second-Order Sallen-Key Low-Pass
Filter with an Extra Pole-Zero Pair
Figure 4-16 is a second-order Sallen-Key low-pass
filter with Chip Select. Use the FilterLab® software from
Microchip to determine the R and C values for the op
amp A’s second-order filter. Op amp B can be used to
add a pole-zero pair using C3, R5 and R6.
The low-pass filter shown in Figure 4-17 does not
require external capacitors and uses only three external resistors; the op amp's GBWP sets the corner
frequency. R1 and R2 are used to set the circuit gain
and R3 is used to set the Q. To avoid gain peaking in
the frequency response, Q needs to be low (lower
values need to be selected for R3). Note that the amplifier bandwidth varies greatly over temperature and
process. However, this configuration provides a lowcost solution for applications with high bandwidth
requirements.
VIN
R1
R2
R3
A
B
VREF
VOUT
MCP6285
CS
R2
R4
R3
VIN
R1
R5
C3
R6
B
A
FIGURE 4-17:
Capacitorless Second-Order
Low-Pass Filter with Chip Select.
VOUT
MCP6285
C1
C2
CS
FIGURE 4-16:
Second-Order Sallen-Key
Low-Pass Filter with an Extra Pole-Zero Pair and
Chip Select.
© 2008 Microchip Technology Inc.
DS21811E-page 17
MCP6281/1R/2/3/4/5
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6281/1R/2/3/4/5 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP6281/1R/2/
3/4/5 op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range. See
the model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Circuit Designer &
Simulator
Microchip’s Mindi™ Circuit Designer & Simulator aids
in the design of various circuits useful for active filter,
amplifier and power-management applications. It is a
free online circuit designer & simulator available from
the Microchip web site at www.microchip.com/mindi.
This interactive circuit designer & simulator enables
designers to quickly generate circuit diagrams, simulate circuits. Circuits developed using the Mindi Circuit
Designer & Simulator can be downloaded to a personal
computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to
help you achieve faster time to market. For a complete
listing of these boards and their corresponding user’s
guides and technical information, visit the Microchip
web site at www.microchip.com/analogtools.
Two of our boards that are especially useful are:
• P/N SOIC8EV: 8-Pin SOIC/MSOP/TSSOP/DIP
Evaluation Board
• P/N SOIC14EV: 14-Pin SOIC/TSSOP/DIP
Evaluation Board
5.6
Application Notes
The following Microchip Application Notes are available on the Microchip web site at www.microchip. com/
appnotes and are recommended as supplemental reference resources.
ADN003: “Select the Right Operational Amplifier for
your Filtering Circuits”, DS21821
AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
AN723: “Operational Amplifier AC Specifications and
Applications”, DS00723
AN884: “Driving Capacitive Loads With Op Amps”,
DS00884
AN990: “Analog Sensor Conditioning Circuits – An
Overview”, DS00990
These application notes and others are listed in the
design guide:
“Signal Chain Design Guide”, DS21825
MAPS (Microchip Advanced Part
Selector)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip web site at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparison
reports. Helpful links are also provided for Data sheets,
Purchase, and Sampling of Microchip parts.
DS21811E-page 18
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example:
5-Lead SOT-23 (MCP6281 and MCP6281R)
Device
XXNN
Code
MCP6281
CHNN
MCP6281R
EUNN
CH25
Note: Applies to 5-Lead SOT-23.
Example:
6-Lead SOT-23 (MCP6283)
XXNN
CL25
8-Lead MSOP
Example:
XXXXXX
6281E
YWWNNN
722256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
MCP6281
E/P256
0722
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
OR
MCP6281
E/P e3 256
0722
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS21811E-page 19
MCP6281/1R/2/3/4/5
Package Marking Information (Continued)
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Example:
MCP6281
E/SN0722
256
14-Lead PDIP (300 mil) (MCP6284)
MCP6281E
SN e3 0722
256
OR
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
MCP6284-E/P
0722256
MCP6284
E/P e3
0722256
OR
14-Lead SOIC (150 mil) (MCP6284)
Example:
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
MCP6284ESL
0722256
MCP6284
e3
E/SL^^
0722256
OR
14-Lead TSSOP (MCP6284)
XXXXXX
YYWW
NNN
DS21811E-page 20
Example:
6284EST
0437
256
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
5-Lead Plastic Small Outline Transistor (OT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
5
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
1.90 BSC
1.45
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-091B
© 2008 Microchip Technology Inc.
DS21811E-page 21
MCP6281/1R/2/3/4/5
6-Lead Plastic Small Outline Transistor (CH) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
4
N
E
E1
PIN 1 ID BY
LASER MARK
1
2
3
e
e1
D
A
A2
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
6
Pitch
e
0.95 BSC
Outside Lead Pitch
e1
1.90 BSC
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.45
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-028B
DS21811E-page 22
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
8-Lead Plastic Micro Small Outline Package (MS) [MSOP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
N
E
E1
NOTE 1
1
2
e
b
A2
A
c
φ
L
L1
A1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
8
Pitch
e
Overall Height
A
–
0.65 BSC
–
Molded Package Thickness
A2
0.75
0.85
0.95
Standoff
A1
0.00
–
0.15
Overall Width
E
Molded Package Width
E1
3.00 BSC
Overall Length
D
3.00 BSC
Foot Length
L
Footprint
L1
1.10
4.90 BSC
0.40
0.60
0.80
0.95 REF
Foot Angle
φ
0°
–
8°
Lead Thickness
c
0.08
–
0.23
Lead Width
b
0.22
–
0.40
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-111B
© 2008 Microchip Technology Inc.
DS21811E-page 23
MCP6281/1R/2/3/4/5
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N
NOTE 1
E1
1
3
2
D
E
A2
A
L
A1
c
e
eB
b1
b
Units
Dimension Limits
Number of Pins
INCHES
MIN
N
NOM
MAX
8
Pitch
e
Top to Seating Plane
A
–
–
.210
Molded Package Thickness
A2
.115
.130
.195
Base to Seating Plane
A1
.015
–
–
Shoulder to Shoulder Width
E
.290
.310
.325
Molded Package Width
E1
.240
.250
.280
Overall Length
D
.348
.365
.400
Tip to Seating Plane
L
.115
.130
.150
Lead Thickness
c
.008
.010
.015
b1
.040
.060
.070
b
.014
.018
.022
eB
–
–
Upper Lead Width
Lower Lead Width
Overall Row Spacing §
.100 BSC
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-018B
DS21811E-page 24
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
14-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N
NOTE 1
E1
1
3
2
D
E
A2
A
L
A1
c
b1
b
e
eB
Units
Dimension Limits
Number of Pins
INCHES
MIN
N
NOM
MAX
14
Pitch
e
Top to Seating Plane
A
–
–
.210
Molded Package Thickness
A2
.115
.130
.195
Base to Seating Plane
A1
.015
–
–
Shoulder to Shoulder Width
E
.290
.310
.325
Molded Package Width
E1
.240
.250
.280
Overall Length
D
.735
.750
.775
Tip to Seating Plane
L
.115
.130
.150
Lead Thickness
c
.008
.010
.015
b1
.045
.060
.070
b
.014
.018
.022
eB
–
–
Upper Lead Width
Lower Lead Width
Overall Row Spacing §
.100 BSC
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-005B
© 2008 Microchip Technology Inc.
DS21811E-page 25
MCP6281/1R/2/3/4/5
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
e
N
E
E1
NOTE 1
1
2
3
α
h
b
h
A2
A
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
β
MILLIMETERS
MIN
N
NOM
MAX
8
Pitch
e
Overall Height
A
–
1.27 BSC
–
Molded Package Thickness
A2
1.25
–
–
Standoff §
A1
0.10
–
0.25
Overall Width
E
Molded Package Width
E1
3.90 BSC
Overall Length
D
4.90 BSC
1.75
6.00 BSC
Chamfer (optional)
h
0.25
–
0.50
Foot Length
L
0.40
–
1.27
Footprint
L1
1.04 REF
Foot Angle
φ
0°
–
8°
Lead Thickness
c
0.17
–
0.25
Lead Width
b
0.31
–
0.51
Mold Draft Angle Top
α
5°
–
15°
Mold Draft Angle Bottom
β
5°
–
15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-057B
DS21811E-page 26
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
/HDG3ODVWLF6PDOO2XWOLQH61±1DUURZPP%RG\>62,&@
1RWH
)RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW
KWWSZZZPLFURFKLSFRPSDFNDJLQJ
© 2008 Microchip Technology Inc.
DS21811E-page 27
MCP6281/1R/2/3/4/5
14-Lead Plastic Small Outline (SL) – Narrow, 3.90 mm Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
N
E
E1
NOTE 1
1
2
3
e
h
b
A
A2
c
φ
L
A1
β
L1
Units
Dimension Limits
Number of Pins
α
h
MILLIMETERS
MIN
N
NOM
MAX
14
Pitch
e
Overall Height
A
–
1.27 BSC
–
Molded Package Thickness
A2
1.25
–
–
Standoff §
A1
0.10
–
0.25
Overall Width
E
Molded Package Width
E1
3.90 BSC
Overall Length
D
8.65 BSC
1.75
6.00 BSC
Chamfer (optional)
h
0.25
–
0.50
Foot Length
L
0.40
–
1.27
Footprint
L1
1.04 REF
Foot Angle
φ
0°
–
8°
Lead Thickness
c
0.17
–
0.25
Lead Width
b
0.31
–
0.51
Mold Draft Angle Top
α
5°
–
15°
Mold Draft Angle Bottom
β
5°
–
15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-065B
DS21811E-page 28
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm Body [TSSOP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
N
E
E1
NOTE 1
1 2
e
b
A2
A
c
A1
φ
Units
Dimension Limits
Number of Pins
L
L1
MILLIMETERS
MIN
N
NOM
MAX
14
Pitch
e
Overall Height
A
–
0.65 BSC
–
Molded Package Thickness
A2
0.80
1.00
1.05
Standoff
A1
0.05
–
0.15
1.20
Overall Width
E
Molded Package Width
E1
4.30
6.40 BSC
4.40
Molded Package Length
D
4.90
5.00
5.10
Foot Length
L
0.45
0.60
0.75
Footprint
L1
4.50
1.00 REF
Foot Angle
φ
0°
–
8°
Lead Thickness
c
0.09
–
0.20
Lead Width
b
0.19
–
0.30
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-087B
© 2008 Microchip Technology Inc.
DS21811E-page 29
MCP6281/1R/2/3/4/5
NOTES:
DS21811E-page 30
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
APPENDIX A:
REVISION HISTORY
Revision E (February 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Updated notes to Section 1.0 “Electrical Characteristics”.
Increased absolute maximum voltage range of
input pins. Increased maximum operating
supply voltage (VDD).
Added Section 1.1 “Test Circuits”.
Added Figure 2-32.
Updated Table 3-1 and Table 3-2 in Section 3.0
“Pin Descriptions”.
Added Section 4.1.1 “Phase Reversal”,
Section 4.1.2 “Input Voltage and Current
Limits”, and Section 4.1.3 “Normal Operation”.
Added Section 4.7 “Unused Op Amps”.
Updated Section 5.0 “Design AIDS”.
Updated package outline drawings in
Section 6.0 “Packaging Information”.
Revision D (December 2004)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Added SOT-23-5 packages for the MCP6281
and MCP6281R single op amps.
Added SOT-23-6 package for the MCP6283
single op amp.
Added Section 3.0 “Pin Descriptions”.
Corrected application circuits
(Section 4.9 “Application Circuits”).
Added SOT-23-5 and SOT-23-6 packages and
corrected
package
marking
information
(Section 6.0 “Packaging Information”).
Added Appendix A: Revision History.
Revision C (June 2004)
The following is the list of modifications:
1.
Undocumented changes.
Revision B (October 2003)
The following is the list of modifications:
1.
Undocumented changes.
Revision A (June 2003)
• Original data sheet release.
© 2008 Microchip Technology Inc.
DS21811E-page 31
MCP6281/1R/2/3/4/5
NOTES:
DS21811E-page 32
© 2008 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
–
X
/XX
Temperature
Range
Package
Examples:
a)
b)
c)
Device:
MCP6281:
MCP6281T:
MCP6281RT:
MCP6282:
MCP6282T:
MCP6283:
MCP6283T:
MCP6284:
MCP6284T:
MCP6285:
MCP6285T:
Single Op Amp
Single Op Amp
(Tape and Reel)
(SOIC, MSOP, SOT-23-5)
Single Op Amp
(Tape and Reel) (SOT-23-5)
Dual Op Amp
Dual Op Amp
(Tape and Reel) (SOIC, MSOP)
Single Op Amp with CS
Single Op Amp with CS
(Tape and Reel)
(SOIC, MSOP, SOT-23-6)
Quad Op Amp
Quad Op Amp
(Tape and Reel) (SOIC, TSSOP)
Dual Op Amp with CS
Dual Op Amp with CS
(Tape and Reel) (SOIC, MSOP)
Temperature Range:
E
= -40°C to +125°C
Package:
CH = Plastic Small Outline Transistor (SOT-23), 6-lead
(MCP6283 only)
MS = Plastic MSOP, 8-lead
P
= Plastic DIP (300 mil body), 8-lead, 14-lead
OT = Plastic Small Outline Transistor (SOT-23), 5-lead
(MCP6281, MCP6281R only)
SL = Plastic SOIC (3.90 mm body), 14-lead
SN = Plastic SOIC, (3.90 mm body), 8-lead
ST = Plastic TSSOP (4.4 mm body), 14-lead
© 2008 Microchip Technology Inc.
d)
e)
MCP6281-E/SN:
Extended Temperature,
8LD SOIC package.
MCP6281-E/MS:
Extended Temperature,
8LD MSOP package.
MCP6281-E/P:
Extended Temperature,
8LD PDIP package.
MCP6281T-E/OT: Tape and Reel,
Extended Temperature,
5LD SOT-23 package.
MCP6281RT-E/OT: Tape and Reel,
Extended Temperature,
5LD SOT-23 package.
a)
MCP6282-E/SN:
b)
MCP6282-E/MS:
c)
MCP6282-E/P:
d)
MCP6282T-E/SN:
a)
MCP6283-E/SN:
b)
MCP6283-E/MS:
c)
MCP6283-E/P:
d)
MCP6283T-E/CH:
a)
MCP6284-E/P:
b)
MCP6284T-E/SL:
c)
MCP6284-E/SL:
d)
MCP6284-E/ST:
a)
MCP6285-E/SN:
b)
MCP6285-E/MS:
c)
MCP6285-E/P:
d)
MCP6285T-E/SN:
Extended Temperature,
8LD SOIC package.
Extended Temperature,
8LD MSOP package.
Extended Temperature,
8LD PDIP package.
Tape and Reel,
Extended Temperature,
8LD SOIC package.
Extended Temperature,
8LD SOIC package.
Extended Temperature,
8LD MSOP package.
Extended Temperature,
8LD PDIP package.
Tape and Reel,
Extended Temperature,
6LD SOT-23 package.
Extended Temperature,
14LD PDIP package.
Tape and Reel,
Extended Temperature,
14LD SOIC package.
Extended Temperature,
14LD SOIC package.
Extended Temperature,
14LD TSSOP package.
Extended Temperature,
8LD SOIC package.
Extended Temperature,
8LD MSOP package.
Extended Temperature,
8LD PDIP package.
Tape and Reel,
Extended Temperature,
8LD SOIC package.
DS21811E-page 33
MCP6281/1R/2/3/4/5
NOTES:
DS21811E-page 34
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, rfPIC and SmartShunt are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS21811E-page 35
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01/02/08
DS21811E-page 36
© 2008 Microchip Technology Inc.