MOTOROLA MHPM7A10S120DC3

Order this document
by MHPM7A10S120DC3/D
SEMICONDUCTOR TECHNICAL DATA
Integrated Power Stage for 2.0 hp
460 VAC Motor Drive
Motorola Preferred Device
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 2.0 hp general purpose 3–phase induction motor drive
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) matched with fast soft free–wheeling
diodes to give optimum performance. The solderable top connector
pins are designed for easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 125°C, 720 V
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• Independent Brake Circuit Connections
• UL Recognition Pending
10 AMP, 1200 VOLT
HYBRID POWER MODULE
ORDERING INFORMATION
Device
Voltage
Rating
Current
Rating
Equivalent
Horsepower
PHPM7A10S120DC3
1200
10
2.0
CASE 464D–01
ISSUE O
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)
VRRM
900
V
Non–Repetitive Peak Input Rectifier Reverse Voltage (1)
(TJ = 25°C to 150°C)
VRSM
1600
V
IGBT Reverse Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
± 20
V
Continuous IGBT Collector Current (TC = 25°C)
ICmax
10
A
Repetitive Peak IGBT Collector Current (2)
IC(pk)
20
A
Continuous Free–Wheeling Diode Current (TC = 25°C)
IFmax
10
A
Rating
Continuous Free–Wheeling Diode Current (TC = 80°C)
IF80
8.6
A
Repetitive Peak Free–Wheeling Diode Current (2)
IF(pk)
20
A
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C)
IOmax
16
A
IGBT Power Dissipation per die (TC = 95°C)
PD
29
W
Free–Wheeling Diode Power Dissipation per die (TC = 95°C)
PD
13
W
Junction Temperature Range
TJ
– 40 to +150
°C
tsc
10
ms
VISO
2500
Vac
Operating Case Temperature Range
TC
– 40 to +95
°C
Storage Temperature Range
Tstg
– 40 to +150
°C
—
12
lb–in
Short Circuit Duration (VCE = 720 V, TJ = 125°C)
Isolation Voltage, pin to baseplate
Mounting Torque — Heat Sink Mounting Holes
(1) Half–Sine 60 Hz, maximum reverse voltage capability decreases by 0.1% per °C at lower temperature
(2) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
IGBT
Device
Motorola
Motorola, Inc.
1998
Data
1
MHPM7A10S120DC3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VF
—
1.02
1.25
V
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
—
±20
mA
Collector–Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
ICES
—
5.0
100
mA
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 10 A)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
6.0
8.0
V
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
V(BR)CES
1200
—
—
V
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
VCE(sat)
—
2.5
3.5
V
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
VF
1.8
2.0
2.4
V
Cies
—
1200
—
pF
QT
—
65
—
nC
Thermal Resistance — IGBT
RqJC
—
1.4
1.9
°C/W
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
RqJC
—
3.2
4.2
°C/W
Thermal Resistance — Input Rectifier
RqJC
—
3.2
4.2
°C/W
VF
1.983
2.024
2.066
V
TCVF
—
–8.64
—
mV/°C
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)
THERMAL CHARACTERISTICS, EACH DIE
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
2
Motorola IGBT Device Data
MHPM7A10S120DC3
TYPICAL CHARACTERISTICS
20
20
TJ = 25°C
16
14
12
10
8.0
6.0
4.0
16
14
25°C
12
10
8.0
6.0
4.0
2.0
0
2.0
0
0.2
0
0.4
0.8
0.6
1.0
1.2
0
0.5
1.0
1.5
2.0
2.5
VF, FORWARD VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Characteristics —
Input Rectifier
Figure 2. Forward Characteristics —
Free–Wheeling Diode
20
20
15 V
16
12 V
14
12
10
8.0
6.0
TJ = 25°C
4.0
2.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGE = 18 V
18
IC , COLLECTOR CURRENT (AMPS)
VGE = 18 V
18
IC , COLLECTOR CURRENT (AMPS)
TJ = 125°C
18
IF, FORWARD CURRENT (AMPS)
IF, FORWARD CURRENT (AMPS)
18
15 V
12 V
16
14
12
10
8.0
6.0
TJ = 125°C
4.0
2.0
0
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Characteristics, TJ = 25°C
Figure 4. Forward Characteristics, TJ = 125°C
+15 V
MBRS130T3
220 W
MC33153
RG(on)
20 W
RG(off)
MBRS130T3
MBRS130T3
Figure 5. Recommended Gate Drive Circuit
Motorola IGBT Device Data
3
MHPM7A10S120DC3
TYPICAL CHARACTERISTICS
V F, FORWARD VOLTAGE @ 1 mA (VOLTS)
2.5
+15 V
R1
12.4 kW
A/D INPUT
14
MAXIMUM
TYPICAL
MINIMUM
2.0
1.5
1.0
TYPICAL
VF = 2.240 – 0.00864 T
MIN: 2.199 – 0.00864 T
MAX: 2.282 – 0.00864 T
0.5
0
20
0
15
40
60
80
100
140
120
160
T, TEMPERATURE (°C)
Figure 6. Recommended Temperature Sense
Bias Circuit
MOTOR OUTPUT
Figure 7. BAV99LT1 Temperature Sense Diode
Performance: VF = 2.59 – 7.31E–3 TC
BRAKE RESISTOR
U
R
V
S 3 PHASE INPUT
W
T
1
2
3
4
5
6
7
8
9
10
11
12
D7
D1
Q1
Q3
D3
D8
D10 D12
D9
D11 D13
Q5
D5
TEMP
SENSE
D14
Q2
D2
D4
24
R1
SENSE
RESISTOR
Q4
Q7
Q6
D6
23
22
R2
21
20
19
18
17
16
15
14
13
FILTER
R3
+
R NTC
C1
FILTER
Figure 8. Schematic of Module, Showing Pin–Out and
External Connections
4
Motorola IGBT Device Data
MHPM7A10S120DC3
KEEP–OUT ZONES (x4)
0.585
0.250
0.066
0.175
0.450
1.850
0.925
0.270
0.140
NON–PLATED
THRU–HOLE
PLATED THRU–HOLES (x24)
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
NOTES:
1. Package is symmetrical, except for a polarizing plastic post near pin 1,
indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Access holes for mounting screws may or may not be necessary depending on
assembly plan for finished product.
Figure 9. Package Footprint (Dimensions in Inches)
Motorola IGBT Device Data
5
MHPM7A10S120DC3
PACKAGE DIMENSIONS
A
AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...)
ARE TO THE CENTER OF THE LEAD.
Q 3 PL
U
Y 2 PL
1
B
2
3
4
5
6
7
8
9
10
11
MILLIMETERS
DIM MIN
MAX
A 111.51 112.52
B
50.93
51.94
C
12.32
13.59
D
0.89
1.65
E
8.64
9.65
F
0.13
0.64
G
5.97
6.73
H
46.48
47.50
J
0.41
1.22
K
16.26
17.27
L
3.71
4.72
M
5.46
6.48
N
10.92
11.94
P
37.60
38.60
Q
2.01
2.62
R
23.24
23.75
S
14.35
15.37
U
99.10 100.08
V
81.28
82.55
W
42.67
43.69
Y
5.15
5.77
X
11.30
12.07
AA
2.01
2.72
AB 16.26
17.27
12
H
P N
R
24
23
22
21
20
19
18
17
16
15
14
13
S
M
G 22 PL
4 PL
J
INCHES
MIN
MAX
4.390
4.430
2.005
2.045
0.485
0.535
0.035
0.065
0.340
0.380
0.005
0.025
0.235
0.265
1.830
1.870
0.016
0.048
0.640
0.680
0.146
0.186
0.215
0.255
0.430
0.470
1.480
1.520
0.079
0.103
0.915
0.935
0.565
0.605
3.900
3.940
3.200
3.240
1.680
1.720
0.203
0.227
0.445
0.475
0.079
0.107
0.640
0.680
F
DETAIL Z
DETAIL Z
24 PL
D 24 PL
AB
C
X
V
K
E
L
W
CASE 464D–01
ISSUE O
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6
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MotorolaMHPM7A10S120DC3/D
IGBT Device Data