Order this document by MKP1V120/D SEMICONDUCTOR TECHNICAL DATA . . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: • • • • • SIDACs 0.9 AMPERES RMS 110 thru 280 VOLTS High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators MT1 MT2 CASE 59-04 (DO-41) Polarity denoted by cathode band MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off-State Repetitive Voltage On-State Current RMS (TL = 80°C, Lead Length = 3/8″, conduction angle = 180°, 60 Hz Sine Wave) On-State Surge Current (Non-repetitive) (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature (Lead Length ≥ 1/16″ from Case, 10 s Max) Symbol MKP1V120 MKP1V130 Unit VDRM ±90 Volts IT(RMS) 0.9 Amp ITSM 4 Amps TJ –40 to +125 °C Tstg –40 to +150 °C TL 230 °C Symbol Max Unit RθJL 40 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead Lead Length = 3/8″ REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions) Characteristic Symbol Breakover Voltage Max Unit 110 120 — — 130 140 IDRM — — — — 5 50 µA VTM — 1.3 1.5 Volts Dynamic Holding Current IH — — 100 mA Switching Resistance RS 0.1 — — kΩ Breakover Current IBO — — 200 µA di/dt — 90 — A/µs Repetitive Peak Off-State Current (60 Hz Sine Wave, VD = Rated VDRM) TJ = 125°C Forward “On” Voltage (ITM = 1 A) Maximum Rate-of-Change of On-State Current MKP1V120, 130, 1.0 140 130 I T(RMS), ON-STATE CURRENT (AMPS) T L , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) Typ Volts MKP1V120 MKP1V130 TL 120 3ń ″ 8 110 3ń ″ 8 100 TJ = 125°C Sine Wave Conduction Angle = 180° 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT(RMS) ON-STATE CURRENT (AMPS) 1.8 2.0 TJ = 125°C Sine Wave Conduction Angle = 180° 0.8 Assembled in PCB Lead Length = 3ń8″ 0.6 0.4 0.2 0 Figure 1. Maximum Lead Temperature 20 40 60 80 100 120 TA, MAXIMUM AMBIENT TEMPERATURE (°C) 140 Figure 2. Maximum Ambient Temperature 10 7.0 5.0 1.25 PRMS , POWER DISSIPATION (WATTS) I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) Min VBO 3.0 2.0 TJ = 25°C 125°C 1.0 0.7 0.5 0.3 0.2 TJ = 25°C Conduction Angle = 180°C 1.00 0.75 0.50 0.25 0.1 0 1.0 2.0 3.0 4.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical On-State Voltage 2 5.0 0 0.2 0.4 0.6 0.8 IT(RMS), ON-STATE CURRENT (AMPS) 1.0 Figure 4. Power Dissipation Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) THERMAL CHARACTERISTICS 1.0 0.7 0.5 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steadystate conditions are achieved. Using the measured value of T L, the junction temperature may be determined by: 0.3 0.2 ZθJL(t) = RθJL • r(t) ∆TJL = Ppk RθJL[r(t)] tp where: TIME ∆TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 TJ = TL + ∆TJL 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 5. Thermal Response 1.4 I H , HOLDING CURRENT (NORMALIZED) VBO, BREAKOVER VOLTAGE (NORMALIZED) TYPICAL CHARACTERISTICS 1.0 0.9 0.8 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 6. Breakover Voltage 1.0 0.8 0.6 0.4 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 7. Holding Current ITM 100 IPK , PEAK CURRENT (AMPS) 1.2 VTM Slope = RS IH IS 10 IDRM IPK VS I(BO) VDRM 10% tw RS 1.0 0.1 1.0 tw, PULSE WIDTH (ms) 10 Figure 8. Pulse Rating Curve Motorola Thyristor Device Data +( V (BO) V(BO) * VS ) ( IS * I(BO) ) 100 Figure 9. V-I Characteristics 3 PACKAGE DIMENSIONS B NOTES: 1. POLARITY DENOTED BY CATHODE BAND. 2. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. K D DIM A B D K A MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 ––– INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 ––– K CASE 59–04 (DO–41) ISSUE M DATE 09/25/84 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MKP1V120/D* MKP1V120/D