MMBTA1xLT1 Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc IC 300 mAdc Collector Current — Continuous SOT–23 COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C R θJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C R θJA T J , T stg 2 EMITTER DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14 LT1 = 1N; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 — Vdc I CBO — 100 nAdc I EBO — 100 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-11 WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistors ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 (I C = 100mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) –– 5,000 10,000 10,000 20,000 — — — — VCE(sat) –– 1.5 Vdc V BE — 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) fT (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) 125 — MHz 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4. f T = |h f e | *f test . RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2012-11 WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistors NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 2.0 100 I n , NOISE CURRENT (pA) S 200 10 µA 50 100µA 20 IC=1.0mA 10 5.0 V T, TOTAL WIDEBAND NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz R ~ ~0 1.0 0.7 0.5 IC=1.0mA 0.3 0.2 100µA 0.1 10µA 0.03 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 10 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 3. Noise Current 200 500 BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 I C = 10 µA 50 100 µA 30 20 1.0 mA 2.0 50k 100k BANDWIDTH = 10 Hz TO 15.7 kHz 200 10 µA 100 50 100 µA 20 I C = 1.0 mA 10 10 1.0 5.0k 10k 20k Figure 2. Noise Voltage 5.0 10 20 50 100 200 500 R S , SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage 2012-11 BANDWIDTH = 1.0 Hz 0.07 0.05 NF, NOISE FIGURE (dB) e n , NOISE VOLTAGE (nV) 500 1.0k 5.0 1.0 2.0 5.0 10 20 50 100 200 500 1.0k R S , SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistors SMALL–SIGNAL CHARACTERISTICS T J =25°C 10 7.0 C ibo C obo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 4.0 |h fe |, SMALL– SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 V CE = 5.0 V f = 100 MHz T J = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 1.0 70k 25°C 30k 20k 10k –55°C V CE= 5.0V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 500 V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B = 1000 V BE(on) @ V CE = 5.0 V 1.0 V CE(sat) @ I C /I B = 1000 10 20 30 50 70 100 200 300 C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages 2012-11 500 T J= 25°C 2.5 I C = 10mA 50 mA 250mA 500mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I B , BASE CURRENT (µA) 1.2 7.0 200 Figure 9. Collector Saturation Region 1.4 5.0 100 Figure 8. DC Current Gain T J = 25°C 0.6 50 I C , COLLECTOR CURRENT (mA) 1.6 0.8 V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 100k 5.0k 20 3.0 500 R θV , TEMPERATURE COEFFICIENTS (mV/°C) h FE , DC CURRENT GAIN T J= 125°C 7.0k 10 Figure 7. High Frequency Current Gain Figure 6. Capacitance 50k 5.0 I C , COLLECTOR CURRENT (mA) V R, REVERSE VOLTAGE (VOLTS) 200k 2.0 –1.0 –2.0 *APPLIES FOR I C /I B <h FE /3.0 +25°C TO +125°C * R θVC for V CE(sat) –55°C TO +25°C –3.0 +25°C TO +125°C –4.0 θ VB for V BE –5.0 –55°C TO +25°C –6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients WILLAS ELECTRONIC CORP. MMBTA1xLT1 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) Darlington Amplifier Transistors 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.05 SINGLE PULSE SINGLE PULSE 0.07 0.05 0.03 Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z 0.02 Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) θJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response I C , COLLECTOR CURRENT (mA) 1.0k 1.0 ms 700 FIGURE A 500 300 T C = 25°C T A = 25°C 200 tP 100µs 1.0 s PP P 100 70 50 t 30 CURRENT LIMIT 20 THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 1/f DUTY CYCLE =t 1 f = 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13.Active Region Safe Operating Area 2012-11 P 40 t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistors .110(2.80) .063(1.60) .047(1.20) .122(3.10) .106(2.70) .083(2.10) .006(0.15)MIN. SOT-23 .008(0.20) .080(2.04) .070(1.78) .003(0.08) .055(1.40) .035(0.89) .004(0.10)MAX. .020(0.50) .012(0.30) Dimensions in inches and (millimeters) 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-11 inches mm WILLAS ELECTRONIC CORP.