MMDT3906 DUAL SURFACE MOUNT PNP TRANSISTORS This device contains two electrically-isolated 2N3906 PNP transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 FEATURES 6 3 Electrically Isolated Dual PNP Switching Transistor 2 Lead-Free Plating (100% matte tin finish) 1 6 5 4 1 2 3 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: S2A MAXIMUM RATINGS TJ = 25°C Unless otherwise noted Rating Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage Voltage VEB -5.0 V Collector Current IC -200 mA Total Power Dissipation (Note 1) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Units R thja 625 °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/20/2005 Page 1 www.panjit.com MMDT3906 ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Parameter Min Typ Max Units Collector-Emitter Breakdown Voltage V (BR)CEO I C = -1.0mA -40 - - V Collector-Base Breakdown Voltage V (BR)CBO I C = -10uA -40 - - V V (BR)EBO I E = -10uA -5.0 - - V Symbol Emitter-Base Breakdown Voltage Conditions Collector Cutoff Current ICEX VCE= -30V, V EB= -3.0V - - -50 nA Base Cutoff Current IBL VCE= -30V, V EB= -3.0V - - -50 nA I C = -0.1mA, VCE = -1.0V 60 - - I C = -1.0mA, VCE = -1.0V 80 - - I C = -10mA, VCE= -1.0V 100 - 300 I C = -50mA, V CE= -1.0V 60 - - I C = -100mA, VCE= -1.0V 30 - - I C = -10mA, I B = -1.0mA - - -0.25 V I C = -50mA, I B = -5.0mA - - -0.40 V I C = -10mA, I B = -1.0mA -0.65 - -0.85 I C = -50mA, I B = -5.0mA - - -0.95 250 - - MHz h FE DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) fT Gain-Bandwidth Product V CE= -20V, I C = -10mA f = 100MHz - V Collector-Base Capacitance CCBO VCB= -5.0V, f =1.0MHz - - 4.5 pF Emitter-Base Capacitance CEBO VEB = -0.5V, f =1.0MHz - - 10 pF - - 35 ns - - 35 ns - - 225 ns - - 75 ns Delay Time td Rise Time tr Storage Time ts Fall Time tf VCC = -3.0V, I C = -10mA VBE(off) = 0.5V, I B1= -1.0mA V CC= -3.0V, I C= -10mA I B1= I B2= -1.0mA Note 2. Short duration test pulse used to minimize self-heating SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 3V 275Ω 275Ω < 1ns 0 < 1ns +9.1V 10KΩ 0.5V C S * < 4pF -10.9V 1N916 300ns 10KΩ 0 CS* < 4pF -10.9V 1N916 10 to 500us Duty Cycle ~ 2.0% Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit Delay and Rise Tim e Equivalent Test Circuit 9/20/2005 Page 2 www.panjit.com MMDT3906 CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted 300 1.2 TJ = 150° C V CE = 1V 250 1.0 0.8 TJ = 100° C TJ = 25° C V BE (V) hFE 200 150 TJ = 25° C 100 0.6 TJ = 100° C TJ = 150° C 0.4 50 0.2 V CE = 1V 0 0.01 0.1 1 10 100 0.0 0.01 1000 0.1 1 Colle ctor Curre nt, IC (m A) 10 100 1000 Colle ctor Cur r e nt, IC (m A) Fig. 1. hFE vs. Ic Fig. 2. VBE vs. Ic 1.00 1.000 IC/IB = 10 TJ = 25° C 0.10 TJ = 150° C VBE(sat) (V) VCE(sat) (V) TJ = 100° TJ = 150° TJ = 25° IC/IB = 10 0.01 0.01 0.1 1 10 100 0.100 0.01 1000 Colle ctor Curre nt, IC (m A) 0.1 1 10 100 Colle ctor Curr e nt, IC (m A) Fig. 3. VCE(sat) vs. Ic Fig. 4. VBE(sat) vs. Ic 10 Capacitance (pF) CIB (EB) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Capacitances 9/20/2005 Page 3 www.panjit.com MMDT3906 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION MMDT3906 T/R7 - 3,000 units per 7 inch reel MMDT3906 T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/20/2005 Page 4 www.panjit.com