MMDT5P333 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector (Output) Base (Input) R1 R2 Emitter (Common) SOT-23 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage VEBO - 20, 6 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 56 - - - -ICBO - - 0.1 µA -IBE - - 2.4 mA -VCE(sat) - - 0.3 V -VI(on) - - 2 V -VI(off) 0.3 - - V Input Resistor R1 2.31 3.3 4.29 KΩ Input Resistor R2 7.5 10 12.5 KΩ R 2 / R1 2.4 3 3.7 - fT - 200 - MHz DC Current Gain at -VCE = 5 V, -IC = 50 mA Collector Base Cutoff Current at -VCB = 50 V Base Emitter Current at -VBE = 5 V Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 2.5 mA Input On Voltage at -VCE = 0.3 V, -IC = 20 mA Input Off Voltage at -VCE = 5 V, -IC = 100 µA Resistance Ratio Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/01/2008