MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector −Base Voltage MPSA28 MPSA29 VCBO 80 100 Vdc Emitter −Base Voltage EMITTER 1 VEBO 12 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range BASE 2 MARKING DIAGRAM TO−92 CASE 29−11 STYLE 1 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS A2x AYWW G G 3 MPSA2x = Device Code x = 8 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA28 MPSA28G MPSA28RLRP MPSA28RLRPG MPSA29 MPSA29G MPSA29RLRP MPSA29RLRPG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Package Shipping TO−92 5,000 Units/Box TO−92 (Pb−Free) 5,000 Units/Box TO−92 2,000/Ammo Pack TO−92 (Pb−Free) 2,000/Ammo Pack TO−92 5,000 Units/Box TO−92 (Pb−Free) 5,000 Units/Box TO−92 2,000/Ammo Pack TO−92 (Pb−Free) 2,000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPSA28/D MPSA28, MPSA29 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 − − − − 80 100 − − − − 12 − − − − − − 100 100 − − − − 500 500 − − 100 10,000 10,000 − − − − − − 0.7 0.8 1.2 1.5 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES MPSA28 MPSA29 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO MPSA28 MPSA29 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA28 MPSA29 Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) MPSA28 MPSA29 Vdc ICBO nAdc ICES Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) − 1.4 2.0 Vdc fT 125 200 − MHz Cobo − 5.0 8.0 pF Vdc SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe S ftest. http://onsemi.com 2 MPSA28, MPSA29 200 1.8 TA = 125°C 100 50 TA = 25°C 20 TA = −55°C V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (k) VCE = 5.0 V 10 5.0 2.0 5.0 10 20 100 50 200 1.0 VCE(S) @ IC/IB = 1.0 k 1.0 2.0 5.0 10 20 100 50 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “ON” Voltages 500 1k 2.4 25°C to 125°C −1.0 qVC for VCE(S) −55°C to 25°C −2.0 −3.0 25°C to 125°C −55°C to 25°C −4.0 qVB for VBE −5.0 1.0 2.0 5.0 10 20 100 50 200 TA = 25°C 2.0 IC = 500 mA 1.6 1.2 IC = 100 mA IC = 10 mA IC = 250 mA 0.8 0.4 500 1.0 2.0 0.2 10 20 100 200 1 k 1.5 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Temperature Coefficients Figure 4. Collector Saturation Region 10 500 1.0 ms h fe , HIGH FREQUENCY CURRENT GAIN 1k I C , COLLECTOR CURRENT (mA) VBE(ON) @ VCE = 5.0 V 1.2 0.6 1k 500 VCE , COLLECTOR VOLTAGE (VOLTS) qV, TEMPERATURE COEFFICIENT (mV/° C) 1.0 0 100 ms 1.0 s 200 TC = 25°C TA = 25°C 100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE v 10% MPSA29 50 20 10 TA = 25°C 1.4 0.8 2.0 1.0 VBE(S) @ IC/IB = 1.0 k 1.6 1.0 2.0 5.0 10 20 50 100 5.0 VCE = 5.0 V TA = 25°C f = 100 MHz 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 5. Active Region − Safe Operating Area Figure 6. High Frequency Current Gain http://onsemi.com 3 200 300 MPSA28, MPSA29 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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