Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19140HR3 MRF6S19140HSR3 1930 - 1990 MHz, 29 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S19140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S19140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 77°C, 29 W CW RθJC 0.33 0.38 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2007. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19140HR3 MRF6S19140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1150 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 2 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16 18 dB Drain Efficiency ηD 26 27.5 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19140HR3 MRF6S19140HSR3 2 RF Device Data Freescale Semiconductor + VBIAS C5 C9 C11 C15 Z8 Z9 VSUPPLY B1 R3 + C13 R1 C7 C3 Z5 Z6 Z7 Z10 R5 C2 Z1 RF INPUT Z2 Z3 RF OUTPUT Z4 C1 DUT VBIAS VSUPPLY B2 R4 C6 + C14 R2 C8 C10 C12 C4 R6 Z1 Z2 Z3 Z4 Z5 Z6 0.864″ 1.373″ 0.282″ 0.103″ 0.094″ 0.399″ x 0.082″ x 0.082″ x 0.900″ x 0.900″ x 1.055″ x 1.055″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 PCB 0.115″ x 0.569″ Microstrip 0.191″ x 0.289″ Microstrip 0.681″ x 0.081″ Microstrip 1.140″ x 0.081″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.5 Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Beads, Surface Mount 2743019447 Fair - Rite C1, C2 39 pF Chip Capacitors ATC100B390JT500XT ATC C3, C4, C5, C6 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C7, C8, C9, C10, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C13, C14 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon C15 470 μF, 63 V Electrolytic Capacitor ESMG630ELL471MK205 United Chemi - Con R1, R2 560 kΩ, 1/4 W Chip Resistors CRCW12065600FKTA Vishay R3, R4 1.0 kΩ, 1/4 W Chip Resistors CRCW12061001FKTA Vishay R5, R6 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKTA Vishay MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 3 6S19140 C13 R3 C5 B1 R1 R5 C9 C11 C3 C7 C15 C1 CUT OUT AREA C2 C8 R2 R4 B2 R6 C4 C6 C14 C10 C12 © Motorola, Inc. 2002 DS1464 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout MRF6S19140HR3 MRF6S19140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 16 30 20 Gps 14 12 10 8 IRL VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1150 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 0 −10 −20 IM3 6 4 10 −40 −60 ACPR −80 2 0 1910 1920 1930 1940 1950 1960 1970 1980 1990 −100 2000 −10 −12 −14 −16 −18 −20 −22 −24 −26 −28 −30 IRL, INPUT RETURN LOSS (dB) 18 ηD, DRAIN EFFICIENCY (%) 40 ηD IM3 (dBc), ACPR (dBc) 20 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg. 14 40 Gps 12 10 VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 30 20 0 IRL −20 8 IM3 6 −40 ACPR 4 2 1910 −60 1920 1930 1940 1950 1960 1970 1980 1990 −80 2000 −10 −12 −14 −16 −18 −20 −22 −24 −26 −28 −30 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 16 ηD, DRAIN EFFICIENCY (%) 50 ηD IM3 (dBc), ACPR (dBc) 18 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 75 Watts Avg. 18 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1700 mA Gps, POWER GAIN (dB) 17 1500 mA 1150 mA 16 900 mA 15 600 mA 14 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing 13 12 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 900 mA −30 IDQ = 1700 mA 600 mA −40 −50 1150 mA 1500 mA −60 1 10 100 400 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 5 0 58 −10 Pout, OUTPUT POWER (dBm) VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1150 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −20 3rd Order −30 5th Order −40 7th Order −50 −60 0.1 1 10 100 Ideal 57 56 55 P3dB = 53.1 dBm (204 W) 54 P1dB = 52.3 dBm (171 W) 53 52 Actual 51 50 49 48 47 46 VDD = 28 Vdc, IDQ = 1150 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 50 −20 VDD = 28 Vdc, IDQ = 1150 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) TC = 25°C 40 30 IM3 −30 ηD −40 ACPR 20 −50 Gps 10 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −60 −70 100 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 70 17 Gps 50 14 40 13 30 12 20 VDD = 28 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C ηD 10 1 10 100 10 0 300 16 Gps, POWER GAIN (dB) 15 11 17 60 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 18 VDD = 32 V 15 14 28 V 13 24 V 12 11 10 IDQ = 1150 mA f = 1960 MHz 9 8 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 250 MRF6S19140HR3 MRF6S19140HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 10 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) −20 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK −TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Zload Zo = 5 Ω f = 1900 MHz Zsource f = 1900 MHz f = 2020 MHz VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg. f MHz Zsource Ω Zload Ω 1900 2.27 - j3.95 1.13 - j0.67 1930 2.00 - j4.24 1.11 - j0.60 1960 1.72 - j3.96 1.07 - j0.46 1990 1.80 - j3.51 1.06 - j0.30 2020 1.69 - j3.17 1.01 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19140HR3 MRF6S19140HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. M B (FLANGE) 3 K 2 bbb M D T A M B M M bbb M T A M B M ccc M T A M B M N R (INSULATOR) ccc M T A M aaa M T A M (LID) B S (LID) M (INSULATOR) B M H C T A A INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F E DIM A B C D E F G H K M N Q R S aaa bbb ccc SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF6S19140HR3 (FLANGE) B 1 B (FLANGE) K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 bbb M D T A M B M M bbb M T A M B ccc M T A M B ccc M N R (INSULATOR) M T A M aaa M B S (LID) M T A M B (LID) M (INSULATOR) M H C F E T A A SEATING PLANE DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465C - 02 ISSUE D NI - 880S MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 5 May 2007 Description • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet as functionality is standard, p. 1 • Added “Optimized for Doherty Applications” bullet to Features section, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S19140HR3 MRF6S19140HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004-2007. All rights reserved. MRF6S19140HR3 MRF6S19140HSR3 Document Number: RF Device Data MRF6S19140H Rev. 5, 5/2007 Freescale Semiconductor 11