General Purpose Transistor SMD Diodes Specialist 2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.1 85(4.70 ) 0.1 73(4.40 ) 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0. 135 ( 3. 43) M i n. 0.055(1. 14) 0. 0 20( 0 .51) 0. 0 14( 0. 36) 0.043(1. 10) 0.0 22(0.55 ) 0.0 15(0.38 ) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation MMBT3906-G. Collector 3 0. 01 5( 0. 38) M ax. 0.130(3.30) switching and amplifier application. 0.063(1. 60) Ma x. 1. Emitter 0.0 50(1.27 ) Typ. 2 Base 2. Base 0.1 04(2.64 ) 0.0 96(2.44 ) 1 2 3 1 Emitter 3. Collector Dimensions in inches and (millimeter) Maximum Ratings(T A=25oC unless otherwise noted) Parameter Symbol Min Max Unit Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5 V Collector current-Continuous IC -0.2 A Col lec tor di ssipa tion PC 0. 62 5 W +1 50 O St or ag e tempe rat ur e an d jun ction tempe rat ur e T STG , T J -55 C REV:A QW-BTR05 Page 1 General Purpose Transistor SMD Diodes Specialist O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage I C =-100μA , I E =0 V (BR)CBO -40 V Collector-Emitter breakdown voltage I C =-1mA , I B =0 V (BR)CEO -40 V Emitter-Base breakdown voltage I E =-100μA , I C =0 V (BR)EBO -5 V Collector cut-off current V CB =-40V , I E =0 I CBO -0.1 µA Collector cut-off current V CE =-40V , I B =0 I CEO -0.1 µA Emitter cut-off current V EB =-5V , I C =0 I EBO -0.1 µA DC current gain Collector-Emitter saturation voltage V CE =-1V , I C =-0.1mA h FE(1) 60 V CE =-1V , I C =-1mA h FE(2) 80 V CE =-1V , I C =-10mA h FE(3) 100 V CE =-1V , I C =-50mA h FE(4) 60 V CE =-1V , I C =-100mA h FE(5) 30 I C =-10mA , I B =-1mA 300 -0.25 V -0.4 V -0.85 V -0.95 V V CE (sat) I C =-50mA , I B =-5mA I C =-10mA , I B =-1mA -0.65 Base-Emitter saturation voltage V BE (sat) I C =-50mA , I B =-5mA Output capacitance V CB =-5V , I E =0 , f=100KHz C obo 4.5 pF Input capacitance V EB =-0.5V , I E =0 , f=100KHz C ibo 10 pF NF 4 dB Noise figure V CE =-5V , I C =100μΑ F=1KHz , RS=1KΩ V CE =-20V , I C =-10mA fT Transition frequency 250 MHz f=100MHz Delay time V CC =-3V , V BE =-0.5V td 35 nS Rise time I C =-10mA , I B1 =-1mA tr 35 nS Storage time V CC =-3V , I C =-10mA ts 225 nS Fall time I B1 =I B2 =-1mA tf 75 nS Classification of hFE(3) Rank O Y G Range 100-200 200-300 300-400 REV:A QW-BTR05 Page 2 General Purpose Transistor SMD Diodes Specialist Typical Characteristics (2N3906-G) Fig.1 DC current gain 2 h FE , DC current ga i n (N o rmalized) T j =+125 oC V CE =1.0V T j =25 oC 1 T j =-55 oC 0.1 0.1 10 1 100 200 I C , Collector current (mA) Fig.2 “ON” Voltages 1.0 T j =25 oC V BE(sat) @I C/ I B =10 0.8 V BE @V CE =10V Vo l ta g e (V) 0.6 0.4 V CE(sat) @I C/ I B =10 0.2 0 1.0 10 100 200 I C , Collector current (mA) REV:A QW-BTR05 Page 3