NCP5355 12 V Synchronous Buck Power MOSFET Driver The NCP5355 is a dual MOSFET gate driver optimized to drive the gates of both high− and low−side Power MOSFETs in a Synchronous Buck converter. The NCP5355 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor’s NCP5314 or NCP5316. This architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs. Driving MOSFETs with a 12 V source as opposed to a 5.0 V can significantly reduce conduction losses. Optimized internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs. The floating top driver design can accommodate MOSFET drain voltages as high as 26 V. Both gate outputs can be driven low by applying a low logic level to the Enable (EN) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection. The NCP5355 has the same pinout as the NCP5351 5.0 V Gate Driver. http://onsemi.com MARKING DIAGRAMS 8 SO−8 D SUFFIX CASE 751 8 1 1 8 • • • • 8.0 V − 14 V Gate Drive Capability 2.0 A Peak Drive Current Rise and Fall Times < 15 ns Typical into 3300 pF Propagation Delay from Inputs to Outputs < 30 ns Adaptive Nonoverlap Time Optimized for Large Power MOSFETs Floating Top Driver Accommodates Applications Up to 26 V Undervoltage Lockout to Prevent Switching when the Input Voltage is Low Thermal Shutdown Protection Against Overtemperature TG to DRN Pull−Down Resistor Prevents HV Supply−Induced Turn−On of Top MOSFET BG to PGND Pull−Down Resistor Prevents Transient Turn On of Bottom MOSFET Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost SO−8 EP D SUFFIX CASE 751AC 8 1 5355 ALYW 1 Features • • • • • • • 5355 ALYW A L Y W = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS DRN 1 8 PGND TG BST BG VS CO EN ORDERING INFORMATION Device NCP5355D NCP5355DR2 NCP5355PDR2 Package Shipping† SO−8 98 Units/Rail SO−8 2500 / Tape & Reel SO−8 EP 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 6 1 Publication Order Number: NCP5355/D NCP5355 5V VS 5 V Regulator BST 5V Overtemp. Shutdown 5V 5V 5V VS TG Level Shift 5V Driver − + 100 k DRN 5V UVLO 8.0/7.0 V 30 k Nonoverlap 30 ns PGND 20 k 5V 5V CO 20 k Nonoverlap 30 ns 5V 30 k 5V 2.0 A 5V VS VS 5V BG Level Shift Driver EN Figure 1. Block Diagram PACKAGE PIN DESCRIPTION Pin Pin Symbol Description 1 DRN The switching node common to the high and low−side FETs. The high−side (TG) driver and supply (BST) are referenced to this pin. 2 TG Driver output to the high−side MOSFET gate. 3 BST Bootstrap supply voltage input. In conjunction with an internal diode to VS, a 0.1 F to 1.0 F ceramic capacitor connected between BST and DRN develops supply voltage for the high−side driver (TG). 4 CO Logic level control input produces complementary output states − no inversion at TG; inversion at BG. 5 EN Logic level enable input forces TG and BG low when EN is low. When EN is high (5.0 V), normal operation ensues. No connect defaults EN high. Note: maximum high input is 5.0 V. 6 VS Power supply input. A 0.1 F to 1.0 F ceramic capacitor should be connected from this pin to PGND. 7 BG Driver output to the low−side (synchronous rectifier) MOSFET gate. 8 PGND Ground. http://onsemi.com 2 NCP5355 MAXIMUM RATINGS Rating Value Unit Internally Limited °C Package Thermal Resistance: SO−8 Junction−to−Case, RJC Junction−to−Ambient, RJA 45 165 °C/W °C/W Package Thermal Resistance: SO−8 EP Junction−to−Ambient, RJA (Note 2) 50 °C/W −65 to 150 °C 230 peak °C 1 − Operating Junction Temperature, TJ Storage Temperature Range, TS Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) JEDEC Moisture Sensitivity Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: This device is ESD sensitive. Use standard ESD precautions when handling. 1. 60 seconds maximum above 183°C. 2. Ratings applies when soldered to an appropriate thermal area on the PCB. MAXIMUM RATINGS Pin Symbol Pin Name VMAX VMIN ISOURCE ISINK VS Main Supply Voltage Input 15 V −0.3 V NA 2.0 A Peak (< 100 s) 250 mA DC BST Bootstrap Supply Voltage Input 30 V wrt/PGND 15 V wrt/DRN −0.3 V wrt/DRN NA 2.0 A Peak (< 100 s) 250 mA DC DRN Switching Node (Bootstrap Supply Return) 26 V −1.0 V DC −5.0 V for 100 ns −6.0 V for 20 ns 2.0 A Peak (< 100 s) 250 mA DC NA TG High−Side Driver Output (Top Gate) 30 V wrt/PGND 15 V wrt/DRN −0.3 V wrt/DRN 2.0 A Peak (< 100 s) 250 mA DC 2.0 A Peak (< 100 s) 250 mA DC BG Low−Side Driver Output (Bottom Gate) 15 V −0.3 V 2.0 A Peak (< 100 s) 250 mA DC 2.0 A Peak (< 100 s) 250 mA DC CO TG and BG Control Input 5.5 V −0.3 V 1.0 mA 1.0 mA EN Enable Input 5.5 V −0.3 V 1.0 mA 1.0 mA PGND Ground 0V 0V 2.0 A Peak (< 100 s) 250 mA DC NA NOTE: All voltages are with respect to PGND except where noted. http://onsemi.com 3 NCP5355 ELECTRICAL CHARACTERISTICS (Note 3) (0°C < TJ < 125°C; 9.2 V < VS <13.2 V; 9.2 V < VBST < 26 V; VEN = Float; CLOAD = 3.3 nF; unless otherwise noted.) Test Conditions Min Typ Max Unit VS Quiescent Current, Operating VCO = 0 V or 4.5 V; No output switching − 1.0 2.0 mA VBST Quiescent Current, Operating VCO = 0 V or 4.5 V; No output switching − 3.8 5.0 mA Start Threshold VCO = 0 V 7.0 8.0 9.2 V Stop Threshold VCO = 0 V 6.0 7.0 8.0 V Hysteresis VCO = 0 V 0.70 1.00 1.60 V High Threshold − 2.0 − − V Low Threshold − − − 0.8 V 0 < VCO < 5.0 V − 0 1.0 A High Threshold Both outputs respond to CO 2.0 − − V Low Threshold Both outputs are low independent of CO − − 0.8 V 0 < VEN < 5.0 V −7.0 −3.0 +2.0 A Overtemperature Trip Point Note 4 150 170 − °C Hysteresis Note 4 − 20 − °C Note 4 − 2.0 − A Output Resistance (Sourcing) Duty Cycle < 2.0%, Pulse Width < 100 s, TJ = 125°C, VBST − VDRN = 12 V, VTG = 10 V + VDRN − 1.0 − Output Resistance (Sinking) Duty Cycle < 2.0%, Pulse Width < 100 s, TJ = 125°C, VBST − VDRN = 12 V, VTG = 2.0 V + VDRN − 1.0 − Note 4 − 2.0 − A Output Resistance (Sourcing) Duty Cycle < 2.0%, Pulse Width < 100 s, TJ = 125°C, VS = 12 V, VBG = 10 V − 1.1 − Output Resistance (Sinking) Duty Cycle < 2.0%, Pulse Width < 100 s, TJ = 125°C, VS = 12 V, VBG = 2.0 V − 1.0 − ID = 100 mA − 1.1 1.4 V Parameter DC OPERATING SPECIFICATIONS POWER SUPPLY UNDERVOLTAGE LOCKOUT CO INPUT CHARACTERISTICS Input Bias Current EN INPUT CHARACTERISTICS Input Bias Current THERMAL SHUTDOWN HIGH−SIDE DRIVER Peak Output Current LOW−SIDE DRIVER Peak Output Current CHARGE PUMP DIODE Forward Voltage Drop 3. All limits at temperature extremes are guaranteed by characterization using Standard Statistical Quality Control methods. 4. Guaranteed by design, not 100% tested in production. http://onsemi.com 4 NCP5355 ELECTRICAL CHARACTERISTICS (Note 5) (0°C < TJ < 125°C; 9.2 V < VS <13.2 V; 9.2 V < VBST < 26 V; VEN = Float; CLOAD = 3.3 nF; unless otherwise noted.) Parameter Symbol Test Conditions Min Typ Max Unit AC OPERATING SPECIFICATIONS HIGH−SIDE DRIVER Rise Time trTG VBST − VDRN = 12 V, VS = 12 V (Note 6) − 15 25 ns Fall Time tfTG VBST − VDRN = 12 V, VS = 12 V (Note 6) − 15 25 ns Propagation Delay Time, TG Going High (Nonoverlap Time) tpdhTG VBST − VDRN = 12 V, VS = 12 V (Note 6) 15 30 55 ns Propagation Delay Time, TG Going Low tpdlTG VBST − VDRN = 12 V, VS = 12 V (Note 6) − 45 60 ns Rise Time trBG (Note 6) − 10 20 ns Fall Time tfBG (Note 6) − 10 20 ns Propagation Delay Time, BG Going High (Nonoverlap Time) tpdhBG (Note 6) 15 30 55 ns Propagation Delay Time, BG Going Low tpdlBG (Note 6) − 35 55 ns LOW−SIDE DRIVER 5. All limits at temperature extremes are guaranteed by characterization using Standard Statistical Quality Control methods. 6. AC specifications are guaranteed by characterization, not 100% tested in production. VCO tpdlTG tpdlBG tfTG VTG−VDRN trTG tpdhTG (Non−overlap) VBG trBG tfBG tpdhBG (Non−overlap) VDRN 5.0 V Figure 2. Timing Diagram http://onsemi.com 5 ATX 12 V + 12 V 3.3 V BST TG DRN PGND BG NCP5355 3 4 5 6 SGND Near Socket VFFB Connection 26 27 28 29 30 25 23 22 21 20 19 6 VS 4 CO 5 EN 8 3 2 1 7 6 VS 4 CO 5 EN 8 3 2 1 7 6 VS 4 CO 5 EN 8 3 2 1 7 BST TG DRN PGND BG NCP5355 18 17 16 15 14 13 12 VCORE ILIM 24 ROSC VCC GATE1 GATE2 GATE3 GATE4 GND NCP5314 + GND SGND VDRP VFB COMP CS4N CS4P CS3N CS3P 8 VID2 VID3 VID4 PWRLS VFFB SS PWRGD DRVON 9 PWRGD 7 VID1 VID0 VID5 ENABLE CS2N CS2P CS1N CS1P 2 11 3.3 V 1 10 VID2 VID3 VID4 32 VID5 VID0 VID1 31 ENABLE 3 2 1 7 NCP5355 6 http://onsemi.com Figure 3. Application Diagram, 12 V to 1.4 V, 60 Amp, Four−Phase Converter 6 VS 4 CO 5 EN 8 BST TG DRN PGND BG NCP5355 NTC Near Inductor BST TG DRN PGND BG NCP5355 NCP5355 APPLICATIONS INFORMATION Enable Pin where QTtopFETs is the sum of the Top MOSFETs total gate charge, VBST is the maximum change in voltage across the bootstrap capacitor and is typically designed for a drop of less than a 1.0 V. For example, a circuit using one Top MOSFET with a typical QTtopFETs of 60 nC (at 12 V Vgs) and 1.0 V of droop would give a minimum value for CBST of 60 nF. The Enable pin allows logic level On/Off control of the NCP5355. A Logic Level Low (< 0.8 V) disables the part by forcing both TG and BG low. Bringing both gates low prevents the output voltage from ringing below ground at turn−off. A Logic Level High (> 2.0 V) enables the part by allowing CO to control TG and BG. If the Enable function is not being used, the Enable pin should be left unconnected. This will Enable the part by default, as the Enable pin will be internally pulled high by a 2.0A current. The maximum high voltage level is 5.0 V. Voltages greater than this may damage the part. Internal or External Bootstrap Diode For convenience, a bootstrap diode is internally provided by the NCP5355. This internal diode reduces system cost and parts count. However, this diode will have higher losses than a standard small signal switching or Schottky diode. By using an external Schottky diode (DBST in Figure 4) a small improvement in efficiency can be achieved as illustrated by the graph in Figure 5. While the difference in efficiency is relatively small, this difference represents heat loss in the driver and on average driver temperature may be reduced by about 10°C if using an external diode. If an external diode is used, it should be a Schottky or switching diode. (For example: ON Semiconductor Part Number BAT54HT1 or BAS16HT1.) Undervoltage Lockout Gates TG and BG are both held low until Vs reaches the UVLO Start Threshold of 8.0 V during startup. Vs exceeding the UVLO threshold allows CO to take control of both gates. If Vs falls below the UVLO Stop Threshold of 7.0 V, both gates are then forced low until Vs again exceeds the Start Threshold. Supply Capacitor Selection A 1.0 F ceramic capacitor (CVS in Figure 4) should be located close to the Vs supply pins to provide peak current and to reduce noise. A small 1.0 to 5.0 resistor (RVS in Figure 4) may also be added in series with CVS to provide additional filtering in noisy environments. Adaptive Nonoverlap Bootstrap Capacitor Selection The NCP5355 includes adaptive nonoverlap protection to prevent top and bottom MOSFET cross conduction. When CO goes low signaling TG to turn off the top MOSFET, BG does not go high until the switch node (DRN pin) has fallen below 5.0 V and a fixed amount of delay (tpdhBG) has elapsed. This ensures that the top MOSFET is off before the bottom MOSFET is turned on. The size of the Top MOSFET bootstrap capacitor (CBST in Figure 4 ) is determined from the following equation: CBST QTtopFETs VBST http://onsemi.com 7 NCP5355 VIN = 12 V DBST (Optional) CBST 1.0 RVS 2.2 4 CO 5 EN 6 VS CO BST TG DRN PGND BG U1 NCP5355 CVS 1.0 3 2 1 8 7 Switch Node Qtop NTD60N03 RGU 2.2 VCORE = 1.40 V CSN 4700 p Qbottom1 NTD80N02 + CIN 4.7 Qbottom2 NTD80N02 LOUT COUT RSN 2.2 Figure 4. Typical NCP5355 Application 86 85 84 Internal Diode External Diode 83 Efficiency (%) 82 Internal Diode 81 External Diode 80 200 kHz, Series 2 400 kHz, Series 4 79 600 kHz, Series 8 78 77 External Diode Internal Diode 76 75 74 73 10 15 20 25 IO (A) Figure 5. Efficiency With and Without an Added External Bootstrap Diode, See Figure 4 for Test Circuit http://onsemi.com 8 NCP5355 Switch Node Overshoot and Ringing When CO goes high signaling BG turn off the Bottom MOSFET, TG does not go high until BG has fallen below a threshold of 5.0 V and a fixed amount of time has elapsed (tpdhTG). However, caution must be observed if too much gate resistance and inductance is introduced into the path between the IC and the gate of the low MOSFET. A condition can occur where the NCP5355 will sense that BG has fallen below 5.0 V while the gate end of the MOSFET still has not fallen low enough to turn off the device. This parasitic gate impedance between the driver and MOSFET can reduce the nonoverlap time, and result in shoot−through currents. Due to the high current sourcing capability of the NCP5355, increased overshoot and ringing may be noticed at the switch node (DRN pin). This can be reduced in several ways. One is by adding a low ESR 1.0 F−10 F ceramic capacitor (CIN in Figure 4) from VIN to ground near each Qtop. This capacitor should be located in such a manner as to reduce the loop area of the switch node as shown in Figure 6. A smaller loop area from CIN+ to Qtop to Qbottom and back to CIN− will reduce the amount of ringing by reducing the PCB inductance. If further reduction in overshoot and ringing is desired, a Top MOSFET gate drive resistor may be added (RGU in Figure 4) to slow the turn−on of the Top MOSFET without increasing the turn−off time. Power Dissipation Driver power dissipation may be approximated by the following equation: Layout Guidelines Ploss fSW Vs (1.5 QTtopFETs QTbottomFETs) Vs Is When designing any switching regulator, the layout is very important for proper operation. Gate drivers experience high di/dt during switching, and the inductance of the gate drive traces need to be minimized. Gate drive traces should be kept as short and wide (25 to 30 mils) as practical, and should have a return path directly below the gate trace. The use of a ground plane is a desirable way to return ground signals. Component location is very important. The boost and the Vs capacitor are the most critical, and need to be placed as close as possible to the driver IC pins (CVS and CBST in Figure 4) as shown in Figure 6. Higher frequency designs will magnify any layout problems, and added attention to these guidelines should be observed in designs above 250 kHz. where fSW Vs QTtopFETs is the switching frequency, is the supply voltage, is the sum of the Top MOSFETs total gate charge, QTbottomFETs is the sum of the Bottom MOSFETs total gate charge Is is the supply quiescent current, typically around 5.0 mA The 1.5 factor is a result of the internal bootstrap diode whose loss is equivalent to the charge lost in turning on the Top MOSFET. If an external diode is used to improve efficiency, the 1.5 factor is replaced with 1.0 as this loss will now occur outside the package. Safe design practice requires limiting the SO8 device power dissipation to around 700 mW. Higher frequency designs may require limiting the supply voltage (Vs) to less than 12 V to maintain this limit. QTOP CIN CVS RVS DBST U1 RGU QBOTTOM CBST Figure 6. Typical NCP5355 PCB Layout http://onsemi.com 9 NCP5355 PACKAGE DIMENSIONS SO−8 D SUFFIX CASE 751−07 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B 1 Y M M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 http://onsemi.com 10 mm inches MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 NCP5355 PACKAGE DIMENSIONS SO−8 EP CASE 751AC−01 ISSUE O 2X 0.10 C A−B D D A 8 E1 2X 0.10 C D ÉÉ ÉÉ PIN ONE LOCATION DETAIL A F EXPOSED PAD 5 5 8 G E 2X 1 0.20 C 4 e 4 8X b 0.25 C A−B D B h 1 BOTTOM VIEW A END VIEW TOP VIEW 0.10 C A2 8X 0.10 C ÇÇÇ ÉÉÉ ÉÉÉ ÇÇÇ (b) A c SEATING PLANE SIDE VIEW c1 b1 A1 C A SECTION A−A H GAUGE PLANE 0.25 L (L1) DETAIL A http://onsemi.com 11 NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS (ANGLES IN DEGREES). 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 MM TOTAL IN EXCESS OF THE “b” DIMENSION AT MAXIMUM MATERIAL CONDITION. 4. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. DIM A A1 A2 b b1 c c1 D E E1 e L L1 F G h MILLIMETERS MIN MAX 1.35 1.75 0.00 0.10 1.35 1.65 0.31 0.51 0.28 0.48 0.17 0.25 0.17 0.23 4.90 BSC 6.00 BSC 3.90 BSC 1.27 BSC 0.40 1.27 1.04 REF 2.24 3.20 1.55 2.51 0.25 0.50 0 8 NCP5355 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 For additional information, please contact your local Sales Representative. NCP5355/D