ONSEMI NCV4276BDTADJRKG

NCV4276B
400 mA Low-Drop Voltage
Regulator
The NCV4276B is a 400 mA output current integrated low dropout
regulator family designed for use in harsh automotive environments.
It includes wide operating temperature and input voltage ranges. The
device is offered with adjustable voltage versions available in 2%
output voltage accuracy. It has a high peak input voltage tolerance
and reverse input voltage protection. It also provides overcurrent
protection, overtemperature protection and inhibit for control of the
state of the output voltage. The NCV4276B is available in DPAK
surface mount package. The output is stable over a wide output
capacitance and ESR range. The NCV4276B has improved startup
behavior during input voltage transients.
Features
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MARKING
DIAGRAM
1
DPAK
5−PIN
DT SUFFIX
CASE 175AA
5
1
• Adjustable Voltage Version (from 2.5 V to 20 V) ±2% Output
•
•
•
•
•
•
•
Voltage
400 mA Output Current
500 mV (max) Dropout Voltage (5.0 V Output)
Inhibit Input
Very Low Current Consumption
Fault Protection
♦ +45 V Peak Transient Voltage
♦ −42 V Reverse Voltage
♦ Short Circuit
♦ Thermal Overload
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Controls
These are Pb−Free Devices
I
76BAJG
ALYWW
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Device
*Tab is connected to Pin 3.
ORDERING INFORMATION
See detailed ordering and shipping information in the ordering
information section on page 11 of this data sheet.
Q
Bandgap
Reference
Error
Amplifier
Current Limit and
Saturation Sense
−
+
Thermal
Shutdown
INH
GND
VA
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 0
1
Publication Order Number:
NCV4276B/D
NCV4276B
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Description
1
I
2
INH
Inhibit; Set low−to inhibit.
3
GND
Ground; Pin 3 internally connected to heatsink.
4
VA
Voltage Adjust Input; use an external voltage divider to set the output voltage
5
Q
Output: Bypass with a capacitor to GND. See Figures NO TAG to 3 and Regulator Stability Considerations section.
Input; Battery Supply Input Voltage.
MAXIMUM RATINGS*
Rating
Symbol
Min
Max
Unit
Input Voltage
VI
−42
45
V
Input Peak Transient Voltage
VI
−
45
V
Inhibit INH Voltage
VINH
−42
45
V
Voltage Adjust Input VA
VVA
−0.3
10
V
Output Voltage
VQ
−1.0
40
V
Ground Current
Iq
−
100
mA
Input Voltage Operating Range
VI
VQ + 0.5 V or 4.5 V
(Note 1)
40
V
−
−
4.0
250
−
−
kV
V
Junction Temperature
TJ
−40
150
°C
Storage Temperature
Tstg
−50
150
°C
ESD Susceptibility
(Human Body Model)
(Machine Model)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*During the voltage range which exceeds the maximum tested voltage of I, operation is assured, but not specified. Wider limits may apply. Thermal
dissipation must be observed closely.
LEAD TEMPERATURE SOLDERING REFLOW (Note 2)
Lead Temperature Soldering
Reflow (SMD styles only), Leaded, 60−150 s above 183, 30 s max at peak
Reflow (SMD styles only), Lead Free, 60−150 s above 217, 40 s max at peak
Wave Solder (through hole styles only), 12 sec max
TSLD
−
−
−
240
265
310
°C
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Min Pad Board (Note 3)
1, Pad Board (Note 4)
Junction−to−Tab (psi−JLx, yJLx)
4.2
4.7
C/W
Junction−to−Ambient (RqJA, qJA)
100.9
46.8
C/W
1.
2.
3.
4.
Minimum VI = 4.5 V or (VQ + 0.5 V), whichever is higher.
Per IPC / JEDEC J−STD−020C.
1 oz. copper, 0.26 inch2 (168 mm2) copper area, 0.062″ thick FR4.
1 oz. copper, 1.14 inch2 (736 mm2) copper area, 0.062″ thick FR4.
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NCV4276B
ELECTRICAL CHARACTERISTICS (VI = 13.5 V; −40°C < TJ < 150°C; unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
5.0 mA < IQ < 400 mA
VQ+1 < VI < 40 V
VI > 4.5 V
−2%
−
+2%
V
OUTPUT
Output Voltage
AVQ
Output Current Limitation
IQ
VQ = 90% VQTYP (VQTYP = 2.5 V)
400
700
1100
mA
Quiescent Current (Sleep Mode)
Iq = II − IQ
Iq
VINH = 0 V
−
−
10
mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 1.0 mA
−
130
200
mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 250 mA
−
10
15
mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 400 mA
−
25
35
mA
IQ = 250 mA, VDR = VI − VQ, VI > 4.5 V
−
250
500
mV
IQ = 5.0 mA to 400 mA
−
3.0
20
mV
DVI = 12 V to 32 V,
IQ = 5.0 mA
−
4.0
15
mV
fr = 100 Hz, Vr = 0.5 VPP
−
70
−
dB
−
0.5
−
mV/K
Dropout Voltage
VDR
Load Regulation
DVQ,LO
Line Regulation
DVQ
Power Supply Ripple Rejection
PSRR
Temperature Output Voltage Drift
dVQ/dT
−
INHIBIT
Inhibit Voltage, Output High
VINH
VQ w VQMIN
−
2.3
2.8
V
Inhibit Voltage, Output Low (Off)
VINH
VQ v 0.1 V
1.8
2.2
−
V
Input Current
IINH
VINH = 5.0 V
5.0
10
20
mA
TSD
IQ = 5.0 mA
150
−
210
°C
THERMAL SHUTDOWN
Thermal Shutdown Temperature*
*Guaranteed by design, not tested in production.
VQ = [(R1 + R2) * Vref] / R2
Input
II
CI1
1.0 mF
I 1
CI2
100 nF
2
4
3
Output
IQ
CQ
22 mF
NCV4276B
INH
IINH
5 Q
Cb*
R1
VA
GND
RL
R2
Cb* − Required if usage of low ESR output capacitor CQ is demand, see Regulator Stability Considerations section
Figure 2. Applications Circuit
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NCV4276B
TYPICAL PERFORMANCE CHARACTERISTICS
100
CQ = 22 mF for these
Output Voltages
Unstable Region
ESR (W)
10
1
6V
2.5 V
Stable Region
12 V
0.1
Unstable Region
0.01
Cb capacitor not connected
0
50
100
150 200
250
300
OUTPUT CURRENT (mA)
350
400
Figure 3. Output Stability with Output Capacitor ESR
5.0
2.54
Iq, CURRENT CONSUMPTION (mA)
VQ, OUTPUT VOLTAGE (V)
2.55
VI = 13.5 V, RL = 1 kW
2.53
2.52
2.51
2.50
2.49
2.48
2.47
2.46
2.45
−40
0
40
80
120
160
TJ = 25°C
RL = 20 W
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Output Voltage vs. Junction
Temperature
40
50
Figure 5. Current Consumption vs. Input Voltage
4
2
TJ = 25°C
RL = 20 W
3.5
0
II, INPUT CURRENT (mA)
VQ, OUTPUT VOLTAGE (V)
20
30
VI, INPUT VOLTAGE (V)
3
2.5
2
1.5
1
0.5
2
4
6
VI, INPUT VOLTAGE (V)
8
−4
−6
−8
−10
−12
10
TJ = 25°C
RL = 6.8 kW
−14
−16
−18
−50
0
0
−2
−25
0
25
VI, INPUT VOLTAGE (V)
Figure 6. Low Voltage Behavior
Figure 7. High Voltage Behavior
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50
NCV4276B
TYPICAL PERFORMANCE CHARACTERISTICS
800
500
TJ = 125°C
400
300
TJ = 25°C
200
100
IQ, OUTPUT CURRENT (mA)
VDR, DROPOUT VOLTAGE (mV)
600
700
600
500
TJ = 25°C
VQ = 0 V
400
300
200
100
0
0
50
100
150 200
250 300
IQ, OUTPUT CURRENT (mA)
0
350 400
0
10
60
50
1.6
Iq, CURRENT CONSUMPTION (mA)
Iq, CURRENT CONSUMPTION (mA)
40
Figure 9. Maximum Output Current vs.
Input Voltage
Figure 8. Dropout Voltage vs. Output Current,
Regulator Set at 5.0 V
TJ = 25°C
VI = 13.5 V
50
40
30
20
10
0
20
30
VI, INPUT VOLTAGE (V)
0
100
200
300
400
500
1.2
1.0
0.8
0.6
0.4
0.2
0
600
TJ = 25°C
VI = 13.5 V
1.4
0
10
20
30
40
50
IQ, OUTPUT CURRENT (mA)
IQ, OUTPUT CURRENT (mA)
Figure 10. Current Consumption vs.
Output Current (High Load)
Figure 11. Current Consumption vs. Output
Current (Low Load)
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60
NCV4276B
Circuit Description
The NCV4276B is an integrated low dropout regulator
that provides a regulated voltage at 400 mA to the output.
It is enabled with an input to the inhibit pin. The regulator
voltage is provided by a PNP pass transistor controlled by
an error amplifier with a bandgap reference, which gives it
the lowest possible dropout voltage. The output current
capability is 400 mA, and the base drive quiescent current
is controlled to prevent oversaturation when the input
voltage is low or when the output is overloaded. The
regulator is protected by both current limit and thermal
shutdown. Thermal shutdown occurs above 150°C to
protect the IC during overloads and extreme ambient
temperatures.
ESR characteristics were measured with ceramic
capacitors and additional series resistors to emulate ESR.
Low duty cycle pulse load current technique has been used
to maintain junction temperature close to ambient
temperature.
Calculating Bypass Capacitor
If usage of low ESR ceramic capacitors is demanded,
connect the bypass capacitor Cb between Voltage Adjust
pin and Q pin according to Applications circuit at Figure 4.
Parallel combination of bypass capacitor Cb with the
feedback resistor R1 contributes in the device transfer
function as an additional zero and affects the device loop
stability, therefore its value must be optimized. Attention
to the Output Capacitor value and its ESR must be paid. See
also Stability in High Speed Linear LDO Regulators
Application Note, AND8037/D for more information.
Optimal value of bypass capacitor is given by following
expression
Regulator
The error amplifier compares the reference voltage to a
sample of the output voltage (VQ) and drives the base of a
PNP series pass transistor via a buffer. The reference is a
bandgap design to give it a temperature−stable output.
Saturation control of the PNP is a function of the load
current and input voltage. Oversaturation of the output
power device is prevented, and quiescent current in the
ground pin is minimized. See Figure 2, Test Circuit, for
circuit element nomenclature illustration.
Cb +
2
p
1
fz
R1
@ (F)
where
R1 = the upper feedback resistor
fz = the frequency of the zero added into the device
transfer function by R1 and Cb external components.
Set the R1 resistor according to output voltage
requirement. Chose the fz with regard on the output
capacitance CQ, refer to the table below.
Regulator Stability Considerations
The input capacitors (CI1 and CI2) are necessary to
stabilize the input impedance to avoid voltage line
influences. Using a resistor of approximately 1.0 W in
series with CI2 can stop potential oscillations caused by
stray inductance and capacitance.
The output capacitor helps determine three main
characteristics of a linear regulator: startup delay, load
transient response and loop stability. The capacitor value
and type should be based on cost, availability, size and
temperature constraints. The aluminum electrolytic
capacitor is the least expensive solution, but, if the circuit
operates at low temperatures (−25°C to −40°C), both the
value and ESR of the capacitor will vary considerably. The
capacitor manufacturer’s data sheet usually provides this
information.
The value for the output capacitor CQ, shown in Figure 2,
should work for most applications; see also Figure 3 for
output stability at various load and Output Capacitor ESR
conditions. Stable region of ESR in Figure 3 shows ESR
values at which the LDO output voltage does not have any
permanent oscillations at any dynamic changes of output
load current. Marginal ESR is the value at which the output
voltage waving is fully damped during four periods after
the load change and no oscillation is further observable.
CQ (mF)
10
22
47
100
fz Range (kHz)
20 - 50
14 - 35
10 - 20
7 – 14
Ceramic capacitors and its part numbers listed bellow
have been used as low ESR output capacitors CQ from the
table above to define the frequency ranges of additional
zero required for stability.
GRM31CR71C106KAC7 (10 mF, 16 V, X7R, 1206)
GRM32ER71C226KE18 (22 mF, 16 V, X7R, 1210)
GRM32ER61C476ME15 (47 mF, 16 V, X5R, 1210)
GRM32ER60J107ME20 (100 mF, 6.3 V, X5R, 1210)
Inhibit Input
The inhibit pin is used to turn the regulator on or off. By
holding the pin down to a voltage less than 1.8 V, the output
of the regulator will be turned off. When the voltage on the
Inhibit pin is greater than 2.8 V, the output of the regulator
will be enabled to power its output to the regulated output
voltage. The inhibit pin may be connected directly to the
input pin to give constant enable to the output regulator.
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NCV4276B
Setting the Output Voltage
The output voltage range can be set between 2.5 V and
20 V. This is accomplished with an external resistor divider
feeding back the voltage to the IC back to the error
amplifier by the voltage adjust pin VA. The internal
reference voltage is set to a temperature stable reference of
2.5 V.
The output voltage is calculated from the following
formula. Ignoring the bias current into the VA pin:
Use R2 < 50 k to avoid significant voltage output errors
due to VA bias current.
Connecting VA directly to Q without R1 and R2 creates
an output voltage of 2.5 V.
Designers should consider the tolerance of R1 and R2
during the design phase.
The input voltage range for operation (pin 1) of the
adjustable version is between (VQ + 0.5 V) and 40 V.
Internal bias requirements dictate a minimum input voltage
of 4.5 V. The dropout voltage for output voltages less than
4.0 V is (4.5 V − VQ).
VQ + [(R1 ) R2) * Vref]ńR2
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NCV4276B
Calculating Power Dissipation
in a Single Output Linear Regulator
The maximum power dissipation for a single output
regulator (Figure 12) is:
PD(max) + [VI(max) * VQ(min)] IQ(max)
Heatsinks
A heatsink effectively increases the surface area of the
package to improve the flow of heat away from the IC and
into the surrounding air.
Each material in the heat flow path between the IC and
the outside environment will have a thermal resistance.
Like series electrical resistances, these resistances are
summed to determine the value of RqJA:
(1)
) VI(max)Iq
where
RqJA + RqJC ) RqCS ) RqSA
VI(max)
VQ(min)
IQ(max)
is the maximum input voltage,
is the minimum output voltage,
is the maximum output current for the
application,
Iq
is the quiescent current the regulator
consumes at IQ(max).
Once the value of PD(max) is known, the maximum
permissible value of RqJA can be calculated:
o
T
RqJA + 150 C * A
PD
where
RqJC is the junction−to−case thermal resistance,
RqCS is the case−to−heatsink thermal resistance,
RqSA is the heatsink−to−ambient thermal
resistance.
RqJC appears in the package section of the data sheet.
Like RqJA, it too is a function of package type. RqCS and
RqSA are functions of the package type, heatsink and the
interface between them. These values appear in data sheets
of heatsink manufacturers.
Thermal, mounting, and heatsinking considerations are
discussed in the ON Semiconductor application note
AN1040/D.
(2)
The value of RqJA can then be compared with those in the
package section of the data sheet. Those packages with
RqJA less than the calculated value in Equation 2 will keep
the die temperature below 150°C.
In some cases, none of the packages will be sufficient to
dissipate the heat generated by the IC, and an external
heatsink will be required.
IQ
II
VI
SMART
REGULATOR®
(3)
VQ
} Control
Features
Iq
Figure 12. Single Output Regulator with Key
Performance Parameters Labeled
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NCV4276B
Thermal Model
A discussion of thermal modeling is in the ON Semiconductor web site: http://www.onsemi.com/pub/collateral/BR1487−D.PDF.
Table 1. DPAK 5−Lead Thermal RC Network Models
Drain Copper Area (1 oz thick)
168 mm2
(SPICE Deck Format)
736 mm2
168 mm2
Cauer Network
168
mm2
736 mm2
Foster Network
736
mm2
Units
Tau
Tau
Units
C_C1
Junction
GND
1.00E−06
1.00E−06
W−s/C
1.36E−08
1.361E−08
sec
C_C2
node1
GND
1.00E−05
1.00E−05
W−s/C
7.41E−07
7.411E−07
sec
C_C3
node2
GND
6.00E−05
6.00E−05
W−s/C
1.04E−05
1.029E−05
sec
C_C4
node3
GND
1.00E−04
1.00E−04
W−s/C
3.91E−05
3.737E−05
sec
C_C5
node4
GND
4.36E−04
3.64E−04
W−s/C
1.80E−03
1.376E−03
sec
C_C6
node5
GND
6.77E−02
1.92E−02
W−s/C
3.77E−01
2.851E−02
sec
C_C7
node6
GND
1.51E−01
1.27E−01
W−s/C
3.79E+00
9.475E−01
sec
C_C8
node7
GND
4.80E−01
1.018
W−s/C
2.65E+01
1.173E+01
sec
C_C9
node8
GND
3.740
2.955
W−s/C
8.71E+01
8.59E+01
sec
C_C10
node9
GND
10.322
0.438
W−s/C
168
mm2
736
mm2
sec
R’s
R’s
R_R1
Junction
node1
0.015
0.015
C/W
0.0123
0.0123
C/W
R_R2
node1
node2
0.08
0.08
C/W
0.0585
0.0585
C/W
R_R3
node2
node3
0.4
0.4
C/W
0.0304
0.0287
C/W
R_R4
node3
node4
0.2
0.2
C/W
0.3997
0.3772
C/W
R_R5
node4
node5
2.97519
2.6171
C/W
3.115
2.68
C/W
R_R6
node5
node6
8.2971
1.6778
C/W
3.571
1.38
C/W
R_R7
node6
node7
25.9805
7.4246
C/W
12.851
5.92
C/W
R_R8
node7
node8
46.5192
14.9320
C/W
35.471
7.39
C/W
R_R9
node8
node9
17.7808
19.2560
C/W
46.741
28.94
C/W
R_R10
node9
GND
0.1
0.1758
C/W
NOTE:
C/W
Bold face items represent the package without the external thermal system.
R1
Junction
C1
R2
C2
R3
C3
Rn
Cn
Time constants are not simple RC products. Amplitudes
of mathematical solution are not the resistance values.
Ambient
(thermal ground)
Figure 13. Grounded Capacitor Thermal Network (“Cauer” Ladder)
Junction
R1
C1
R2
C2
R3
C3
Rn
Cn
Each rung is exactly characterized by its RC−product
time constant; amplitudes are the resistances.
Ambient
(thermal ground)
Figure 14. Non−Grounded Capacitor Thermal Ladder (“Foster” Ladder)
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NCV4276B
110
100
qJA (C°/W)
90
80
70
60
1 oz
2 oz
50
40
30
150 200 250 300 350 400 450 500 550 600 650 700 750
COPPER AREA (mm2)
Figure 15. qJA vs. Copper Spreader Area
100
Cu Area 167 mm2
Cu Area 736 mm2
R(t) C°/W
10
1.0
sqrt(t)
0.1
0.01
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
1.0
10
100
1000
TIME (sec)
Figure 16. Single−Pulse Heating Curves
100
RqJA 736 mm2 C°/W
50% Duty Cycle
10
1.0
20%
10%
5%
2%
1%
0.1
Non−normalized Response
0.01
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE WIDTH (sec)
Figure 17. Duty Cycle for 1, Spreader Boards
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NCV4276B
ORDERING INFORMATION
Device
Output Voltage Accuracy
Output Voltage
Package
Shipping†
NCV4276BDTADJRKG
2%
Adjustable
DPAK, 5−Pin
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NCV4276B
PACKAGE DIMENSIONS
DPAK 5, CENTER LEAD CROP
DT SUFFIX
CASE 175AA−01
ISSUE A
−T−
SEATING
PLANE
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
R1
Z
A
S
DIM
A
B
C
D
E
F
G
H
J
K
L
R
R1
S
U
V
Z
1 2 3 4 5
U
K
F
J
L
H
D
G
5 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.020 0.028
0.018 0.023
0.024 0.032
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.045 BSC
0.170 0.190
0.185 0.210
0.025 0.040
0.020
−−−
0.035 0.050
0.155 0.170
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.51
0.71
0.46
0.58
0.61
0.81
4.56 BSC
0.87
1.01
0.46
0.58
2.60
2.89
1.14 BSC
4.32
4.83
4.70
5.33
0.63
1.01
0.51
−−−
0.89
1.27
3.93
4.32
T
SOLDERING FOOTPRINT*
6.4
0.252
2.2
0.086
0.34 5.36
0.013 0.217
5.8
0.228
10.6
0.417
0.8
0.031
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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