CEL NE851M03

NEC's NPN SILICON TRANSISTOR NE851M03
OUTLINE DIMENSIONS (Units in mm)
FEATURES
•
PACKAGE OUTLINE M03
NEW MINIATURE M03 PACKAGE:
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
•
IDEAL FOR ≤ 3 GHz OSCILLATORS
•
LOW 1/f NOISE
•
LOW PUSHING FACTOR
1.2±0.05
0.8±0.1
2
80
1.4 ±0.1
0.45
(0.9)
0.45
0.3 +0.1
-0
3
1
+0.1
0.2 -0
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage
operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal
for today's portable wireless applications.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
fT
|S21E|2
|S21E|2
PARAMETERS AND CONDITIONS
NE851M03
2SC5800
M03
UNITS
MIN
TYP
MAX
GHz
GHz
3.0
5.0
4.5
6.5
–
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
dB
dB
3.0
4.5
4.0
5.5
–
–
2.5
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt
dB
–
1.9
CRE
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
pF
–
0.6
0.8
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
–
–
600
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
–
–
600
hFE
DC Current Gain at VCE = 1 V, IC = 5 mA
100
120
145
2
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
NE851M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
5.5
VEBO
V
1.5
Collector Current
Emitter to Base Voltage
mA
100
PT2
Total Power Dissipation
mW
200
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
IC
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE851M03-T1-A
3 k pcs./reel
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy
board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Reverse Transfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
300
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0 mm(t) )
250
200
150
100
50
0
25
50
75
100
125
1.0
0.8
0.6
0.4
0.2
0
150
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
3
4
60
VCE = 1 V
Collector Current, IC (mA)
Collector Current, IC (mA)
2
5
6
7
8
9
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
60
40
20
0
1
Collector to Base Voltage, VCB (V)
Ambient Temperature, TA (°C)
100
f = 1 MHz
400 µ A
360 µ A
50
320 µ A
280 µ A
40
240 µ A
200 µ A
30
160 µ A
20
120 µ A
80 µ A
10
IB = 40 µA
0.2
0.4
0.6
0.8
Base to Emitter Voltage, VBE (V)
1.0
0
1
2
3
4
5
6
7
Collector to Emitter Voltage, VCE (V)
NE851M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
Gain Bandwidth Product, fT (GHz)
Gain Bandwidth Product, fT (GHz)
10
8
6
4
2
0
1
10
Collector Current, IC (mA)
VCE = 2 V
f = 2 GHz
8
6
4
2
0
100
1
INSERTION POWER GAIN vs.
FREQUENCY
35
VCE = 1 V
IC = 5 mA
30
25
20
15
10
5
0
0.1
1
25
20
15
10
5
Insertion Power Gain, |S21e|2 (dB)
Insertion Power Gain, |S21e|2 (dB)
35
VCE = 1 V
IC = 15 mA
30
25
20
15
10
5
0
0.1
1
Frequency, f (GHz)
1
10
Frequency, f (GHz)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
FREQUENCY
35
VCE = 2 V
IC = 5 mA
30
0
0.1
10
Frequency, f (GHz)
100
INSERTION POWER GAIN vs.
FREQUENCY
Insertion Power Gain, |S21e|2 (dB)
Insertion Power Gain, |S21e|2 (dB)
35
10
Collector Current, IC (mA)
10
VCE = 2 V
IC = 15 mA
30
25
20
15
10
5
0
0.1
1
Frequency, f (GHz)
10
NE851M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
20
2
|S21e|
10
5
VCE = 1 V
f = 1 GHz
1
100
10
2
|S21e|
10
5
VCE = 2 V
f = 1 GHz
1
100
10
Collector Current, IC (mA)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 2 GHz
MAG
2
|S21e|
5
0
1
10
MAG
10
2
|S21e|
5
0
-5
100
VCE = 2 V
f = 2 GHz
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MSG vs.
COLLECTOR CURRENT
10
10
VCE = 1 V
f = 4 GHz
MAG
MSG
5
0
2
|S21e|
-5
-10
MAG
15
Collector Current, IC (mA)
10
-5
MSG
0
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
15
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
MAG
15
0
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
MSG
1
10
Collector Current, IC (mA)
100
Insertion Power Gain, |S21e|2 (dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
20
VCE = 2 V
f = 4 GHz
MSG
5
0
2
|S21e|
-5
-10
1
10
Collector Current, IC (mA)
100
NE851M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
12
2
8
0
1
4
0
100
10
Collector Current, IC (mA)
3
12
2
8
0
Ga
2
8
NF
1
4
0
1
Noise Figure, NF (dB)
12
Collector Current, IC (mA)
Collector Current, IC (mA)
12
Ga
2
8
NF
1
4
1
10
Collector Current, IC (mA)
15
80
25
70
20
60
50
Pout
5
40
0
30
-5
20
IC
-10
-15
-20
-15
-10
-5
0
Input Power, PIN (dBm)
5
10
Output Power, POUT (dBm)
VCE = 2 V, f = 1 GHz
ICq = 5 mA (RF OFF)
10
0
100
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
Collector Current, IC (mA)
Output Power, POUT (dBm)
20
18
3
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
25
0
100
VCE = 2 V
f = 2 GHz
0
0
100
10
10
4
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
3
1
4
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
VCE = 1 V
f = 2 GHz
NF
1
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
Ga
80
VCE = 2 V, f = 2 GHz
ICq = 5 mA (RF OFF)
70
15
60
10
50
5
40
Pout
0
30
-5
10
-10
0
-15
-20
20
IC
-15
-10
-5
10
0
Input Power, PIN (dBm)
5
10
0
Collector Current, IC (mA)
NF
1
16
VCE = 2 V
f = 1 GHz
Associated Gain, Ga (dB)
3
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Ga
4
Associated Gain, Ga (dB)
16
VCE = 1 V
f = 1 GHz
Associated Gain, Ga (dB)
4
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
S21
j100
j25
+45˚
+135˚
S11
S12
j10
0
10
25
100
50
2
+180˚
0
4
6
8
1
0˚
2
S2
-j10
-135˚
-j50
-90˚
0.100 to 6.000 GHz by 0.100
0.100 to 6.000 GHz by 0.100
NE851M03
VC = 1 V, IC = 5 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.500
4.000
4.500
5.000
5.500
6.000
-45˚
-j100
-j25
S11
MAG
0.824
0.748
0.705
0.679
0.673
0.666
0.664
0.665
0.664
0.665
0.664
0.665
0.666
0.666
0.666
0.666
0.666
0.667
0.667
0.667
0.668
0.669
0.669
0.670
0.669
0.669
0.671
0.670
0.672
0.671
0.673
0.675
0.680
S21
ANG
-46.13
-80.11
-104.73
-121.76
-141.72
-155.88
-168.35
-171.53
-174.29
-176.88
-179.25
178.52
176.60
174.50
172.69
170.70
169.07
167.34
165.53
163.82
162.04
160.31
158.48
156.71
154.91
152.89
151.05
141.05
130.96
120.95
111.68
103.60
96.09
MAG
13.999
11.531
9.279
7.580
6.194
4.587
3.313
3.030
2.794
2.593
2.424
2.274
2.145
2.029
1.928
1.835
1.754
1.677
1.610
1.548
1.491
1.440
1.391
1.347
1.305
1.265
1.228
1.075
0.959
0.870
0.802
0.752
0.718
S12
ANG
152.23
131.89
118.04
108.36
98.80
89.15
78.69
75.69
72.95
70.20
67.64
65.18
62.84
60.56
58.37
56.25
54.18
52.01
50.17
48.31
46.50
44.69
42.95
41.25
39.67
38.08
36.56
29.73
24.15
19.76
16.38
13.83
11.88
MAG
0.033
0.051
0.062
0.067
0.068
0.072
0.078
0.081
0.083
0.086
0.090
0.094
0.098
0.103
0.109
0.115
0.121
0.128
0.135
0.143
0.152
0.160
0.169
0.179
0.189
0.199
0.209
0.266
0.326
0.387
0.445
0.498
0.545
S22
ANG
66.48
52.70
43.78
39.96
35.59
37.14
43.34
45.75
48.31
51.04
53.34
55.84
58.31
60.46
62.48
64.26
66.01
67.42
68.65
69.81
70.84
71.44
72.05
72.44
72.75
72.87
72.79
71.32
67.81
62.94
57.33
51.29
45.24
MAG
0.903
0.745
0.620
0.537
0.410
0.356
0.331
0.327
0.325
0.326
0.329
0.332
0.335
0.340
0.345
0.351
0.356
0.362
0.370
0.377
0.383
0.391
0.397
0.405
0.412
0.420
0.427
0.463
0.493
0.518
0.538
0.553
0.563
ANG
-21.08
-34.82
-42.24
-46.40
-53.91
-57.66
-62.07
-64.09
-65.91
-68.31
-70.20
-72.21
-74.41
-76.60
-78.64
-80.85
-83.15
-85.49
-87.59
-89.58
-91.66
-93.66
-95.62
-97.78
-99.60
-101.42
-103.43
-112.30
-121.04
-130.14
-139.86
-150.11
-160.44
K
MAG1
0.089
0.187
0.283
0.368
0.510
0.677
0.872
0.924
0.976
1.010
1.039
1.056
1.065
1.071
1.066
1.064
1.056
1.039
1.021
1.004
0.983
0.959
0.944
0.920
0.903
0.888
0.868
0.808
0.775
0.778
0.798
0.830
0.865
(dB)
26.32
23.51
21.75
20.54
19.57
18.03
16.26
15.75
15.26
14.15
13.11
12.40
11.82
11.31
10.91
10.49
10.17
9.96
9.87
9.96
9.93
9.53
9.15
8.77
8.39
8.03
7.68
6.07
4.69
3.52
2.56
1.79
1.19
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
S21
j100
j25
+45˚
+135˚
S11
S12
j10
0
10
100
50
25
2
2
+180˚
0
4
6
8
1
0˚
S2
-j10
-135˚
-45˚
-j100
-j25
-j50
-90˚
0.100 to 6.000 GHz by 0.100
NE851M03
VC = 2 V, IC = 10 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.100 to 6.000 GHz by 0.100
S11
MAG
0.695
0.624
0.595
0.582
0.609
0.608
0.608
0.610
0.609
0.608
0.608
0.608
0.609
0.609
0.608
0.607
0.606
0.607
0.606
0.605
0.606
0.606
0.605
0.606
0.604
0.603
0.604
0.602
0.604
0.607
0.614
0.625
0.638
S21
ANG
-61.64
-100.58
-123.61
-137.95
-154.61
-165.54
-175.12
-177.63
-179.89
178.01
176.04
174.19
172.64
170.81
169.29
167.57
166.16
164.68
163.12
161.63
160.05
158.52
156.89
155.28
153.71
151.89
150.23
141.17
131.89
122.66
114.03
106.41
99.10
MAG
23.158
17.024
12.782
10.071
8.021
5.858
4.192
3.830
3.528
3.271
3.057
2.866
2.703
2.556
2.429
2.313
2.211
2.115
2.031
1.954
1.884
1.821
1.760
1.706
1.654
1.605
1.561
1.375
1.233
1.119
1.026
0.949
0.887
S12
ANG
144.21
122.63
110.30
102.30
95.02
87.23
78.55
76.03
73.70
71.35
69.13
66.99
64.95
62.92
60.94
59.01
57.16
55.16
53.46
51.71
50.01
48.31
46.64
44.97
43.40
41.82
40.28
33.08
26.63
20.91
15.94
11.68
8.19
MAG
0.026
0.038
0.044
0.049
0.052
0.060
0.075
0.080
0.086
0.091
0.097
0.104
0.110
0.117
0.124
0.131
0.138
0.146
0.154
0.162
0.170
0.178
0.186
0.196
0.205
0.214
0.223
0.272
0.323
0.376
0.428
0.477
0.523
S22
ANG
61.44
50.73
47.67
47.72
47.72
52.69
59.31
61.10
62.79
64.04
65.34
66.51
67.27
68.13
68.82
69.46
70.00
70.12
70.56
70.80
70.94
70.87
70.86
70.87
70.66
70.49
69.98
68.05
64.75
60.65
55.85
50.70
45.37
MAG
0.821
0.610
0.480
0.405
0.289
0.245
0.226
0.223
0.221
0.223
0.226
0.229
0.232
0.237
0.241
0.247
0.252
0.258
0.266
0.271
0.278
0.285
0.291
0.299
0.306
0.314
0.321
0.357
0.391
0.421
0.448
0.471
0.489
ANG
-29.68
-44.71
-51.39
-54.57
-65.42
-68.86
-72.02
-73.72
-75.21
-77.34
-78.57
-80.20
-81.76
-83.43
-85.04
-86.60
-88.61
-90.25
-91.95
-93.42
-94.93
-96.56
-98.07
-99.75
-101.10
-102.50
-104.02
-111.13
-118.23
-126.11
-134.94
-144.72
-154.78
K
MAG1
0.183
0.335
0.469
0.583
0.727
0.876
0.984
1.005
1.026
1.039
1.044
1.045
1.043
1.040
1.033
1.027
1.023
1.011
0.999
0.990
0.979
0.966
0.957
0.941
0.931
0.922
0.907
0.862
0.823
0.805
0.799
0.805
0.821
(dB)
29.48
26.51
24.63
23.13
21.91
19.91
17.48
16.36
15.15
14.33
13.69
13.12
12.63
12.18
11.81
11.45
11.11
10.96
11.21
10.82
10.45
10.10
9.75
9.41
9.08
8.76
8.45
7.04
5.81
4.73
3.80
2.99
2.30
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
S21
j100
j25
+45˚
+135˚
S11
j10
S12
0
10
25
2
100
50
2
+180˚
0
4
6
8
1
0˚
S2
-j10
-135˚
-j50
-90˚
0.100 to 6.000 GHz by 0.100
0.100 to 6.000 GHz by 0.100
NE851M03
VC = 3 V, IC = 20 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.500
4.000
4.500
5.000
5.500
6.000
-45˚
-j100
-j25
S11
MAG
0.555
0.525
0.519
0.518
0.570
0.572
0.573
0.574
0.573
0.573
0.572
0.572
0.571
0.571
0.570
0.568
0.567
0.566
0.566
0.564
0.564
0.563
0.562
0.562
0.559
0.558
0.558
0.554
0.555
0.558
0.567
0.581
0.599
S21
ANG
-83.93
-123.08
-141.74
-152.59
-165.20
-173.28
179.45
177.46
175.59
173.85
172.20
170.60
169.35
167.72
166.42
164.85
163.64
162.32
160.87
159.57
158.12
156.71
155.22
153.77
152.31
150.61
149.11
140.64
132.00
123.35
115.32
108.18
101.26
MAG
33.100
21.477
15.332
11.824
9.286
6.730
4.793
4.376
4.030
3.736
3.490
3.272
3.086
2.918
2.772
2.641
2.524
2.415
2.321
2.233
2.155
2.082
2.013
1.953
1.895
1.840
1.791
1.583
1.426
1.300
1.196
1.109
1.034
S12
ANG
134.57
114.01
103.82
97.41
91.94
85.52
78.07
75.85
73.81
71.72
69.72
67.80
65.92
64.09
62.29
60.52
58.79
56.94
55.35
53.71
52.12
50.51
48.91
47.33
45.82
44.30
42.79
35.66
29.06
22.97
17.43
12.40
7.97
MAG
0.020
0.028
0.035
0.040
0.045
0.058
0.078
0.085
0.092
0.099
0.106
0.113
0.121
0.129
0.136
0.144
0.152
0.160
0.167
0.176
0.184
0.192
0.200
0.209
0.218
0.227
0.235
0.280
0.327
0.374
0.421
0.465
0.507
S22
ANG
59.16
53.63
55.51
58.95
60.56
64.80
68.73
69.69
70.12
70.66
71.00
71.20
71.30
71.48
71.38
71.29
71.21
71.07
70.95
70.63
70.33
69.89
69.69
69.30
68.85
68.41
67.76
65.12
61.75
57.82
53.51
48.92
44.18
MAG
0.705
0.469
0.355
0.295
0.203
0.170
0.156
0.154
0.153
0.156
0.159
0.162
0.164
0.169
0.173
0.177
0.182
0.188
0.194
0.200
0.205
0.212
0.218
0.225
0.231
0.238
0.245
0.280
0.313
0.345
0.374
0.400
0.423
ANG
-40.19
-55.38
-61.29
-63.99
-82.72
-87.94
-90.92
-92.65
-93.73
-95.63
-96.09
-97.01
-97.84
-98.85
-99.61
-100.52
-101.75
-102.94
-103.84
-104.57
-105.29
-106.25
-107.15
-108.26
-108.94
-109.85
-110.73
-115.50
-120.66
-127.21
-134.94
-143.93
-153.49
K
MAG1
0.304
0.529
0.680
0.790
0.896
0.977
1.020
1.024
1.032
1.033
1.031
1.030
1.027
1.022
1.018
1.015
1.010
1.004
0.997
0.990
0.982
0.974
0.968
0.958
0.952
0.946
0.937
0.903
0.870
0.850
0.834
0.826
0.828
(dB)
32.17
28.79
26.43
24.68
23.15
20.68
17.03
16.18
15.34
14.66
14.09
13.54
13.07
12.65
12.28
11.89
11.61
11.40
11.42
11.04
10.69
10.35
10.02
9.70
9.39
9.10
8.82
7.52
6.39
5.41
4.54
3.77
3.09
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to
result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for
all damages resulting from such improper use or sale.
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
NE851M03
NONLINEAR MODEL
SCHEMATIC
CCBPKG
0.15 pF
CCB
0.04 pF
LBPKG
Base
0.6 nH
LCPKG
0.7 nH
LB
0.004 nH
Collector
CCE
Q1
0.28 pF
LE
0.004 nH
CCEPKG
0.08 pF
LEPKG
0.65 nH
CBEPKG
0.005 pF
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Parameters
Q1
IS
734.5e-18
MJC
0.122
0.1
BF
166.6
XCJC
NF
1.00
CJS
0
VAF
41
VJS
0.75
IKF
0.597
MJS
0
ISE
39.37e-15
FC
0.5
NE
2.258
TF
13e-12
BR
28.67
XTF
0.39
NR
1.000
VTF
0.668
VAR
2.541
ITF
0.06
IKR
23.22e-3
PTF
20
ISC
27.52e-18
TR
0
NC
2.0
EG
1.11
RE
1.7
XTB
0
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
CBEPKG
LBPKG
LCPKG
LEPKG
NE851M03
0.04 pF
0.28 pF
0.004 nH
0.004 nH
0.15 pF
0.08 pF
0.005 pF
0.6 nH
0.7 nH
0.65 nH
AF and KF are 1/f noise parameters and are bias dependent.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
IC = 5 mA
IC = 10 mA
IC = 15 mA
RB
3.0
XTI
3
AF
1.40
2.551
2.626
RBM
1.0
KF*
0
KF
4.547e-15
855.6e-12
1.735e-9
IRB
759e-6
AF*
1
RC
4.0
CJE
2.51e-12
VJE
0.887
MJE
0.332
CJC
498.2e-15
VJC
0.367
For a better understanding on AF and KF parameters,
please refer to AN1026.
MODEL TEST CONDITIONS
Frequency: 0.1 to 6.0 GHz
Bias:
VCE = 1.5 V, IC = 1 mA to 9 mA
Date:
09/2003
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to
result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for
all damages resulting from such improper use or sale.
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
3-238
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
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In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
3-239