NMSD200B01 Lead-free Green 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE NEW PRODUCT General Description · NMSD200B01 is best suited for switching voltage regulator and power management applications. It improves efficiency and reliability of DC-DC converters used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop. It reduces component count, consumes less space and minimizes parastic losses. The component devices can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features · · · · · · · · Fig. 1: SOT-363 N-MOSFET with ESD Gate Protection N-MOSFET with Low On-Resistance (RDS(ON)) Low Vf Schottky Diode Low Static, Switching and Conduction Losses D_Q1 NC A_D1 6 5 4 Good dynamic performance Surface Mount Package Suited for Automated Assembly Lead Free By Design/ROHS Compliant (Note 1) A D DMN601K "Green" Device (Note 2) SD103AWS Mechanical Data D1 Q1 G SCHOTTKY NMOS C S · · Case: SOT-363 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking & Type Code Information: See Page 7 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 1 2 3 Terminal Connections: See Diagram G_Q1 S_Q1 C_D1 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Fig 2 : Schematic and Pin Configuration Ordering Information: See Last Page Weight: 0.016 grams (approximate) Sub-Components Reference Device Type Figure DMN601K_DIE (ESD Protected) Q1 N-MOSFET 2 SD103AWS_DIE D1 Schottky Diode 2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Symbol Value Pd 200 mW Power Derating Factor above 25 °C Pder 1.6 mW/°C Output Current Iout 200 mA Symbol Value Unit Junction Operation and Storage Temperature Range Tj, Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of N-MOSFET) RqJA 625 °C/W Power Dissipation (Note 3) Unit Thermal Characteristics Characteristic Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30911 Rev. 2 - 2 1 of 8 www.diodes.com NMSD200B1 ã Diodes Incorporated NEW PRODUCT Maximum Ratings: @ TA = 25°C unless otherwise specified Sub-Component Device: ESD Protected N-Channel MOSFET (Q1) Symbol Value Unit Drain Source Voltage Characteristic VDSS 60 V Drain Gate Voltage (RGS <+ 1MOhm VDGR 60 V Gate Source Voltage Continuous +/-20 VGSS Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs=10V) 200 ID Pulsed (tp<10uS, Duty Cycle<1%) Sub-Component Device: Schottky Diode (D1) Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage mA 800 IS Continuous Source Current V +/-40 200 mA @ TA = 25°C unless otherwise specified Symbol Value Unit VRRM VRWM VR 40 V VR(RMS) 28 V Foward Continuous Current (Page 1: Note 3) IFM 350 mA Non-Repetitive Peak Foward Surge Current @ t<1.0 s IFSM 1.5 A RMS Reverse Voltage Electrical Characteristics: ESD Protected N-Channel MOSFET (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max VBR(DSS) IDSS Gate Body Leakage Current, Foward Gate Body Leakage Current, Reverse Unit Test Condition 60 ¾ ¾ V VGS = 0V, ID = 10mA ¾ ¾ 1 mA VGS = 0V, VDS = 60V IGSSF ¾ ¾ 10 mA VGS = 20V, VDS = 0V IGSSR ¾ ¾ -10 mA VGS = -20 V, VDS = 0V OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Foward Transconductance 1 1.6 2.5 V VDS = VGS=10V, ID = 0.25mA 1.65 1.8 3 V VDS = VGS = 10V, ID = 1mA ¾ 0.09 1.5 V VGS = 5V, ID = 50mA ¾ 0.62 1.25 V VGS = 10V, ID = 500mA 500 ¾ ¾ mA VGS = 10V, VDS >=2*VDS(ON) ¾ 1.6 3 1.25 2 W VGS = 5V, ID= 50mA ¾ gFS 80 260 ¾ mS VDS >=2*VDS(ON), ID=200mA VGS(th) VDS(on) ID(on) RDS (on) VGS = 10V, ID = 500mA Dynamic Characteristics Ciss ¾ ¾ 50 pF Output Capacitance COSS ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5 pF Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Switching Characteristics* Turn-On Delay Time td(on) 20 ns Turn-Off Delay Time td(off) 40 ns 1.5 V IS 300 mA ISM 800 mA Drain-Source (Body) Diode Characteristics and Maximum Ratings Drain-Source Diode Foward On-Voltage Maximum Continuous Drain-Source Diode Foward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Foward Current VSD 0.88 VGS = 0V, IS = 300 mA* * Pulse Test: Pulse width, tp <300 us, Duty Cycle, d £2% DS30911 Rev. 2 - 2 2 of 8 www.diodes.com NMSD200B01 Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 40 ¾ ¾ V ¾ ¾ 0.37 ¾ ¾ 0.6 Reverse Breakdown Voltage (Note 4) Foward Voltage Drop (Note 4) VFM Test Condition IR = 10mA IF =20mA V IF =200mA Peak Reverse Current (Note 4) IRM ¾ ¾ 5 mA VR = 30V Total Capacitance CT ¾ 28 ¾ pF VR = 0V, f = 1.0 MHz Reverse Recovery Time trr ¾ 10 ¾ ns IF=IR= 200 mA, Irr= 0.1xIR, RL= 100 W Notes: 4. Short duration test pulse used to minimize self-heating effect. Typical Characteristics PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 150 125 100 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs. Ambient Temperature Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics 1.4 0.8 TA = 150° C VDS = 10V VGS = 10V 0.7 1.2 TA = 125° C TA = -55° C 1.0 ID, DRAIN CURRENT (A) VGS = 6V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics: Schottky Barrier Diode (D1) VGS = 5V VGS = 8V 0.8 VGS = 4V 0.6 0.4 TA = 25° C 0.6 TA = 85° C 0.5 0.4 0.3 0.2 0.2 0.1 VGS = 3V 0 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Output Characteristics DS30911 Rev. 2 - 2 0 1 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE Fig. 5 Transfer Characteristics 3 of 8 www.diodes.com NMSD200B01 10 2 VGS(th), GATE THRESHOLD VOLTAGE (V) VGS = 10V Pulsed VDS = 10V ID = 1mA Pulsed TA = 125° C 1.5 TA = 85° C TA = 150° C 1 1 TA = -55° C TA = 25° C 0.5 0 -50 -25 25 0 75 50 100 125 0.1 0.001 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 Gate Threshold Voltage vs. Junction Temperature 10 TA = 0° C TA = -25° C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 7 Static Drain-Source On-Resistance vs. Drain Current 1 7 VGS = 5V Pulsed TA = 125° C TA = 25° C Pulsed 6 TA = 85° C ID = 300mA 5 TA = 150° C 4 1 3 TA = -55° C TA = 25° C TA = 0° C 2 TA = -25° C ID = 150mA 1 0.1 0.001 0 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 8 Static Drain-Source On-Resistance vs. Drain Current 0 1 4 2 6 8 10 12 16 14 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2.5 1 VGS = 10V Pulsed VGS = 0V Pulsed ID = 300mA 2 ID = 150mA 1.5 1 0.5 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT VDS = VGS TA = 125° C TA = 150° C 0.1 TA = 85° C TA = 25° C TA = 0° C 0.01 TA = -25° C TA = -55° C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 10 Static Drain-Source On-State Resistance vs. Junction Temperature DS30911 Rev. 2 - 2 4 of 8 www.diodes.com 0 0.5 1 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Reverse Drain Current vs. Source-Drain Voltage NMSD200B01 VGS = 10V TA= 25°C Pulsed 0.1 0.01 VGS = 0V 0.001 0.5 0 700 gFS, FORWARD TRANSCONDUCTANCE (mS) NEW PRODUCT IS, REVERSE DRAIN CURRENT (A) 1 600 TA = -25° C 500 TA = -55° C TA = 25° C 400 300 TA = 150° C 200 TA = 125° C T = 85° C A 100 0 1 0.2 0 0.8 0.6 0.4 ID, DRAIN CURRENT (A) Fig. 13 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON)) VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 12 Reverse Drain Current vs. Body Diode Forward Voltage IF, INSTANTANEOUS FORWARD CURRENT (A) Schottky Barrier Diode-D1 Characteristics 1000 1 TA = 125°C 100 TA = 125° C 0.1 TA = 75° C TA = 75°C 10 TA = 25° C 0.01 1 TA = 25°C TA = 0° C 0.001 TA = -40° C TA = 0°C 0.1 TA = -40°C 0.0001 0 200 400 600 0.01 800 1000 5 0 15 10 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 15 Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 14 Forward Characteristics 30 CT, TOTAL CAPACITANCE (pF) f = 1.0MHz 25 20 15 10 5 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 16 Total Capacitance vs. Reverse Voltage DS30911 Rev. 2 - 2 5 of 8 www.diodes.com NMSD200B01 NEW PRODUCT Application Details Drain ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode (SD103AWS) integrated as one in NMSD200B01 can be used as a discrete entity for general applications or part of circuits to function as a low side switch in a Synchronous Rectifier. The N-MOSFET is selected based on the input voltage range as the maximum duty cycles can be greater than 45%. Schottky diode is selected based on instantaneous Vf (less than 0.75 V) at maximum operation current. The Schottky diode dissipates very little power because it is on for only a small portion of the switching cycle. Normally it shows much lower leakage current and smaller on-resistance (RDS(ON)) even compared to its monolithic counterpart. This device is designed to improve efficiency and reliability of synchronous buck converters used in voltage regulator modules (VRM). The lower Vf of the Schottky diode leads to lower static loss. Every time the high side MOSFET is turned on in the buck converter, the low side Schottky diode is forced to recover the stored charge and there will be lower loss due to the lower Reverse Recovery charge of the Schottky diode. Q1 Cathode D1 Gate SD103AWS DMN601K Source Anode Fig 17 : Example Circuit Diagram It is designed to replace a discrete N-MOSFET and a Schottky diode in two separate packages into one small package as shown in Fig. 17. The Schottky diode parallel to the MOSFET body diode is faster and has lower voltage drop compared to the integrated body diode. Overall this device consumes less board space and also helps to minimize conduction or switching losses due to parasitic inductances (e.g. PCB traces) in power supply applications. (Please see Fig. 18 for one example of typical application circuit used in conjunction with DC-DC converter as a part of power management system and Fig. 19 for low side DC load control.) Typical Application Circuits HighSide Q2 VCC Body Diode 0 DMN601K DC-DC Controller and Driver ICS LowSide Main Inductor Load Q1 D1 C1 SD103AWS DMN601K NMSD200B01 0 Fig. 18 Synchronous Buck Converter with Integrated Schottky Diode DS30911 Rev. 2 - 2 6 of 8 www.diodes.com NMSD200B01 NEW PRODUCT 5V R3 1 1k D2 D1 DC Load LED SD103AWS U1 1 2 +Vin + Vref 2 + L1 1 OUT R1 Q1 2 - 10k DMN601K 1/2AP393 0 R2 NMSD200B01 10M (Comparator with Hysteresis) Fig. 19 Low Side DC Load Control Ordering Information Notes: (Note 5) Device Marking Code Packaging Shipping NMSD200B01-7 SR1 SOT-363 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. SR1 YM Marking Information SR1 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September Fig. 20 Date Code Key Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Year 2006 2007 2008 2009 Code T U V W DS30911 Rev. 2 - 2 7 of 8 www.diodes.com NMSD200B01 NEW PRODUCT Mechanical Details SOT-363 A Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 B C G H K M J D F L D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Fig. 21 Suggested Pad Layout: (Based on IPC-SM-782) E Z E Figure 14 Dimensions SOT-363* Z 2.5 C G Y X G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 * Typical dimensions in mm Fig. 22 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30911 Rev. 2 - 2 8 of 8 www.diodes.com NMSD200B01