Midium Power Transistors (-30V / -1A) 2SAR293P Dimensions (Unit : mm) Structure PNP Silicon epitaxial planar transistor MPT3 (SC-63) <SOT-428> Features Low saturation voltage VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Applications Driver (1) Base (2) Collector (3) Emitter Packaging specifications Type (2) (3) Abbreviated symbol : ML Inner circuit Package MPT3 Code T100 Basic ordering unit (pieces) 1000 (3) (1) Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO Limits Unit -30 -30 V V -6 -1 IC ICP *1 -2 PD *2 0.5 PD *3 2.0 150 Tj Tstg -55 to 150 (1) Base (2) Collector (3) Emitter (2) V A A W W °C °C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land *3 Mounted on a 40×40×0.7 [mm] ceramic substrate www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A Data Sheet 2SAR293P Electrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Collector-base breakdown voltage BVCBO -30 - - V IC= -10μA Emitter-base breakdown voltage BVEBO -6 - - V IE= -10μA Collector cut-off current ICBO - - -100 nA VCB= -30V Emitter cut-off current IEBO - - -100 nA VEB= -6V VCE(sat)*1 - -150 -350 mV IC= -500mA, I B= -25mA hFE 270 - 680 Collector-emitter staturation voltage DC current gain Transition frequency fT *1 - - 320 - - 7 - pF Collector output capacitance Cob Turn-on time ton *2 - 60 - ns Storage time tstg *2 - 160 - ns tf *2 - 50 - ns Fall time VCE= -2V, I C= -100mA VCE= -2V, I E=100mA MHz f=100MHz VCB= -10V, I E=0A f=1MHz IC= -500mA, I B1= -25mA _ -10V IB2=25mA, VCC~ *1 Pulsed *2 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A 2SAR293P Data Sheet lElectrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current(Ⅰ) -5.0mA -4.0mA -3.0mA 1000 -0.50 Ta=25°C -2.0mA -0.45 COLLECTOR CURRENT :IC[A] -0.40 -1.5mA DC CURRENT GAIN :hFE -0.35 -0.30 -1.0mA -0.25 -0.20 -0.15 IB=-0.5mA VCE=-5V -2V 100 -0.10 -0.05 Ta=25C 0.00 10 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -1 -10 Fig.3 DC Current Gain vs. Collector Current(Ⅱ) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ) 1000 -10 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] DC CURRENT GAIN :hFE -1000 COLLECTOR CURRENT :IC[mA] COLECTOR TO EMITTER VOLTAGE:VCE[V] Ta=125°C 100 75°C 25°C -40°C VCE=-2V Pulsed 10 Ta=25°C Pulsed -1 IC/IB=50 20 10 -0.1 -0.01 -1 -10 -100 -1000 -1 -10 -100 -1000 COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ) Fig.6 Ground Emitter Propagation Characteristics -1000 -1 VCE=-2V Pulsed COLLECTOR CURRENT :IC[mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] -100 -0.1 Ta=125°C Ta=125°C -100 75°C 25°C -40°C -10 75°C 25°C IC/IB=20 Pulsed -40°C -1 -0.01 -1 -10 -100 0 -1000 -1 -1.5 BASE TO EMITTER VOLTAGE :VBE[V] COLLECTOR CURRENT :IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. -0.5 3/5 2010.11 - Rev.A 2SAR293P Data Sheet Fig8. Gain Bandwidth Productvs. Emitter Current Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs.Collector-Base Voltage 1000 Ta=25°C f=1MHz IC=0A Cib TRANSITION FREQUENCY : f T [MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 100 10 Cob 1 Ta=25°C VCE=-2V f=100MHz 100 10 -0.1 -1 -10 -100 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT :IE[mA] Fig9. SAFE OPERATING AREA -10 COLLECTOR CURRENT : IC (A) 1ms 10ms -1 100ms -0.1 DC （Mounted on a recommended land) DC （Mounted on a ceramic board) -0.01 Ta=25°C Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A Data Sheet 2SAR293P Switching time test circuit RL=10Ω IB1 VIN IC Pw VCC ~_-5V IB2 Pw _ ~ 50μs DUTY CYCLE≦1% IB2 BASE CURENT WAVEFORM IB1 ton tstg tf 90% COLLECTOR CURRENT WAVEFORM IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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