2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO –70 –70 V Collector to emitter voltage VCEO –50 –60 V Emitter to base voltage VEBO –5 –5 V Collector current IC –4 –4 A Collector peak current I C(peak) –8 –8 A 40 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 150 °C Storage temperature Tstg –45 to +150 –45 to +150 °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — –70 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — –60 — — V I C = –50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1 — — –1 µA VCB = –50 V, IE = 0 60 — 320 60 — 320 VCE = I C = –1 A*2 hFE2 35 — — 35 — — –4 V I C = –0.1 A*2 VCE(sat) — — –1 — — –1 V I C = –2 A, IB = –0.2 A*2 Base to emitter voltage VBE — — –1 — — –1 V VCE = –4 V, IC = –1 A*2 Gain bandwidth product f T — 15 — — 15 — MHz VCE = –4 V, I C = –0.5 A*2 DC current transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation (–10 V, –4 A) D C O pe ra tio (–20 V, –2 A) n 40 TC = 25°C –1.0 –0.5 50 100 Case Temperature TC (°C) 150 –0.05 –1 A) –0.1 .15 (–50 V, –0.24 A) –0.2 , –0 20 –2 0V Collector Current IC (A) IC max (Continuous) 0 2 –5 (–6 Collector power dissipation Pc (W) 60 2SB857 2SB858 –2 –5 –10 –20 –50 –100 Collector to emitter Voltage VCE (V) 2SB857, 2SB858 Typical Transfer Characteristics Typical Output Characteristics –5 VCE = –4 V –2 –30 –2 –20 –10 mA –1 Collector to Emitter Saturation Voltage vs. Collector Current VCE = –4 V 100 25 50 Collector to emitter saturation voltage VCE (sat) (V) DC current transfer ratio hFE 1,000 TC = 75°C –25 20 10 5 –0.01–0.02 –0.05–0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –0.05 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 200 –0.1 –0.01 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 500 –0.2 –0.02 IB = 0 0 –0.5 TC = 75 °C –40 –3 –1.0 25 –25 Collector current IC (A) Collector Current IC (A) –4 –70 –60 –50 0W =4 Pc TC = 25°C –5 –4 –1.4 –1.2 –1.0 IC = 10 IB TC = 75°C 25 –0.8 –25 –0.6 –0.4 –0.2 0 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –5 3 2SB857, 2SB858 Package Dimensions Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 4 TO-220AB Conforms Conforms 1.8 g 2SB857, 2SB858 Cautions 1. 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