GaAs Infrared Emitter OPE5594A 8.7 7.7 24.0 Min 1.3 Max FEATURES • High-output power • Narrow beam angle • High reliability and long term stability • Available for pulse operating APPLICATIONS • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission 5.7 5.0 The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high reliability, high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. 2-0.5 2.0 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS (Ta=25°C ) Item Symbol Rating Unit Power Dissipation PD 150 Forward current IF 100 1 IFP 1.0 A Pulse forward current Reverse voltage VR 5.0 Operating temp. Topr. -25~ +85 °C Tsol. 260. °C Soldering temp. 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item (Ta=25°C) Symbol Conditions Forward voltage VF IF =100mA Reverse current IR VR= 5V Capacitance Ct f = 1MHz 20 pF Radiant intensity Ie IF=100mA 80 mW/ Peak emission wavelength p IF= 50mA 940 nm IF= 50mA 45 nm IF=100mA ±10 deg. Spectral bandwidth 50% Half angle Min. Typ. Max. Unit 1.4 1.7 V 10 µA OPE5594A GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 400 200 100 50 30 100 80 Ta=25 Ta=25 10 5 3 60 40 1 0.5 0.3 20 0 -20 RADIANT INTENSITY Vs. FORWARD CURRENT. 0.1 0 20 40 60 80 Ambient Temperature Ta( ) 1 100 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. 3 5 10 30 50 100 200 Forward Current IF(mA) 500 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 IF=50mA Ta=25 0.8 3 2 0.6 1 0.8 0.5 0.3 0.2 0.1 0.4 0.2 -20 0 20 40 60 80 100 0.0 800 Ambient Temperature Ta( ) FORWARD CURRENT Vs. FORWARD VOLTAGE 850 900 950 1000 1050 Emission Wavelength (nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 100 Ta=25 Ta=25 50 -20° 30 20 -30° 0° 10° 20° 30° 40° -40° -50° 10 5 4 3 2 1 1.0 -10° 50° 60° -60° 70° -70° -80° -90° 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 1.0 0.5 0 0.5 Relative Radiant intensity 80° 90° 1.0