BB OPT101P

OPT101
SBBS002A – JANUARY 1994 – REVISED OCTOBER 2003
MONOLITHIC PHOTODIODE AND
SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER
FEATURES
DESCRIPTION
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The OPT101 is a monolithic photodiode with on-chip
transimpedance amplifier. Output voltage increases linearly
with light intensity. The amplifier is designed for single or
dual power-supply operation, making it ideal for batteryoperated equipment.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates the
problems commonly encountered in discrete designs such as
leakage current errors, noise pick-up, and gain peaking due
to stray capacitance. The 0.09 x 0.09 inch photodiode is
operated in the photoconductive mode for excellent linearity
and low dark current.
The OPT101 operates from +2.7V to +36V supplies and
quiescent current is only 120µA. It is available in clear
plastic 8-pin DIP, and J-formed DIP for surface mounting.
Temperature range is 0°C to +70°C.
SINGLE SUPPLY: +2.7 to +36V
PHOTODIODE SIZE: 0.090 x 0.090 inch
INTERNAL 1MΩ FEEDBACK RESISTOR
HIGH RESPONSIVITY: 0.45A/W (650nm)
BANDWIDTH: 14kHz at RF = 1MΩ
LOW QUIESCENT CURRENT: 120µA
AVAILABLE IN 8-PIN DIP AND 8-LEAD
SURFACE-MOUNT PACKAGES
APPLICATIONS
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MEDICAL INSTRUMENTATION
LABORATORY INSTRUMENTATION
POSITION AND PROXIMITY SENSORS
PHOTOGRAPHIC ANALYZERS
BARCODE SCANNERS
SMOKE DETECTORS
CURRENCY CHANGERS
V+
SPECTRAL RESPONSIVITY
4
8pF
5
7.5mV
λ
VB
OPT101
8
3
Voltage Output (V/µW)
0.6
1MΩ
0.7
Infrared
0.6
0.5
0.5
Using Internal
1MΩ Resistor
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
200
300
400
500 600 700 800
Wavelength (nm)
900
Photodiode Responsivity (A/W)
Ultraviolet
3pF
Blue
0.7
Red
1
Green
Yellow
2
0
1000 1100
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright © 1994-2003, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
OPT101P
PARAMETER
RESPONSIVITY
Photodiode Current
Voltage Output
vs Temperature
Unit to Unit Variation
Nonlinearity(1)
Photodiode Area
DARK ERRORS, RTO(2)
Offset Voltage, Output
vs Temperature
vs Power Supply
Voltage Noise, Dark, fB = 0.1Hz to 20kHz
CONDITIONS
MIN
650nm
650nm
650nm
FS Output = 24V
(0.090 x 0.090in)
(2.29 x 2.29mm)
+5
VS = +2.7V to +36V
VS = +15V, VPIN3 = –15V
POWER SUPPLY
Operating Voltage Range
Quiescent Current
+7.5
±10
10
300
1
±0.5
±0.5
±50
VOUT = 10Vp-p
VOUT = 10V Step
VOUT = 10V Step
100%, Return to Linear Operation
OUTPUT
Voltage Output, High
Capacitive Load, Stable Operation
Short-Circuit Current
(VS) – 1.3
VS = 36V
UNITS
A/W
V/µW
ppm/°C
%
% of FS
in2
mm2
+10
100
±2
mV
µV/°C
µV/V
µVrms
MΩ
%
%
ppm/°C
14
28
160
80
70
50
kHz
µs
µs
µs
µs
µs
(VS) – 1.15
10
15
V
nF
mA
+2.7
Dark, VPIN3 = 0V
RL = ∞, VOUT = 10V
TEMPERATURE RANGE
Specification
Operating
Storage
Thermal Resistance, θJA
MAX
0.45
0.45
100
±5
±0.01
0.008
5.2
TRANSIMPEDANCE GAIN
Resistor
Tolerance, P
W
vs Temperature
FREQUENCY RESPONSE
Bandwidth
Rise Fall Time, 10% to 90%
Settling Time, 0.05%
0.1%
1%
Overload Recovery
TYP
120
220
0
0
–25
+36
240
V
µA
µA
+70
+70
+85
°C
°C
°C
°C/W
MAX
UNITS
100
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
PHOTODIODE SPECIFICATIONS
TA = +25°C, VS = +2.7V to +36V unless otherwise noted.
Photodiode of OPT101P
PARAMETER
Photodiode Area
Current Responsivity
Dark Current
vs Temperature
Capacitance
2
CONDITIONS
(0.090 x 0.090in)
(2.29 x 2.29mm)
650nm
650nm
VDIODE = 7.5mV
MIN
TYP
0.008
5.2
0.45
865
2.5
Doubles every 7°C
1200
in2
mm2
A/W
µA/W/cm2
pA
pF
OPT101
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SBBS002A
OP AMP SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
OPT101 Op Amp(1)
PARAMETER
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
vs Temperature
Input Impedance
Differential
Common-Mode
Common-Mode Input Voltage Range
Common-Mode Rejection
CONDITIONS
MIN
TYP
MAX
UNITS
±0.5
±2.5
10
165
Doubles every 10°C
mV
µV/°C
µV/V
pA
400 || 5
250 || 35
0 to [(VS) – 1]
90
MΩ || pF
GΩ || pF
V
dB
OPEN-LOOP GAIN
Open-loop Voltage Gain
90
dB
FREQUENCY RESPONSE
Gain-Bandwidth Product(2)
Slew Rate
Settling Time 1%
0.1%
0.05%
2
1
5.8
7.7
8.0
MHz
V/µs
µs
µs
µs
(VS) – 1.15
15
V
mA
OUTPUT
Voltage Output, High
Short-Circuit Current
POWER SUPPLY
Operating Voltage Range
Quiescent Current
(–) Input
(–) Input
Linear Operation
(VS) – 1.3
VS = +36V
+2.7
Dark, VPIN3 = 0V
RL = ∞, VOUT = 10V
120
220
+36
240
V
µA
µA
NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains ≥ 10V/V.
OPT101
SBBS002A
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3
PACKAGE/ORDERING INFORMATION(1)
PACKAGE-LEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
DIP-8
NTC
–25°C to +85°C
DIP-8, Surface Mount(2)
DTL
–25°C to +85°C
PRODUCT
OPT101P
OPT101P-J
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
OPT101
OPT101P
Rail, 50
OPT101
OPT101P-J
Rail, 50
NOTES: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet. (2) 8-pin DIP with J-formed
leads for surface mounting.
ELECTROSTATIC
DISCHARGE SENSITIVITY
PIN CONFIGURATIONS
Top View
DIP
VS
1
–In
2
8
Common
7
NC
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
(1)
–V
3
6
NC
1MΩ Feedback
4
5
Output
NOTE: (1) Photodiode location.
MOISTURE SENSITIVITY
AND SOLDERING
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage (VS to “Common” or pin 3) ................................ 0 to +36V
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature .................................................... –25°C to +85°C
Storage Temperature ........................................................ –25°C to +85°C
Junction Temperature ...................................................................... +85°C
Lead Temperature (soldering, 10s) ............................................... +300°C
(Vapor-Phase Soldering Not Recommended)
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
4
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at +85°C for 24 hours.
The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT101 plastic
packages cannot meet flammability test, UL-94.
OPT101
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SBBS002A
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
Red
Blue
Ultraviolet
0.9
VOLTAGE RESPONSIVITY vs RADIANT POWER
10
Green
Yellow
Infrared
70°C
0.8
25°C
0.7
0.6
Output Voltage (V)
Normalized Current or Voltage Output
NORMALIZED SPECTRAL RESPONSIVITY
1.0
650nm
(0.45A/W)
0.5
0.4
0.3
1
RF
=
0.1
10
M
Ω
RF
=
1M
Ω
RF
=
10
0k
Ω
0.01
RF
0.2
=
50
kΩ
λ = 650nm
0.1
0
200
0.001
300
400
500 600 700 800
Wavelength (nm)
900
1000 1100
0.01
0.1
1
10
100
1k
Radiant Power (µW)
VOLTAGE RESPONSIVITY vs IRRADIANCE
VOLTAGE RESPONSIVITY vs FREQUENCY
10
10
1
RF
=
10
M
Ω
0.1
RF
=
1M
Ω
RF
0.01
Responsivity (V/µW)
Output Voltage (V)
RF = 10MΩ
=
10
0k
Ω
RF
=
50
kΩ
0.01
0.1
1
Irradiance
RF = 1MΩ
0.1
10
0.001
100
100
θX
0.6
0.6
θY
0.4
0
±20
±40
±60
7.4
7
0
±80
0
Incident Angle (°)
OPT101
SBBS002A
7.6
7.2
0.2
0.2
0
100k
7.8
0.8
θY
Output Voltage (mV)
Relative Response
0.8
10k
DARK VOUT vs TEMPERATURE
8
1.0
Plastic
DIP Package
1k
Frequency (Hz)
RESPONSE vs INCIDENT ANGLE
θX
RF = 50kΩ, CEXT = 56pF
(W/m2)
1.0
0.4
RF = 100kΩ, CEXT = 33pF
0.01
λ = 650nm
0.001
0.001
1
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10
20
30
40
Temperature (°C)
50
60
70
5
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
QUIESCENT CURRENT vs TEMPERATURE
300
QUIESCENT CURRENT vs (VOUT – VPIN3)
300
250
VS = 15V, VOUT – VPIN3 = 15V
Quiescent Current (µA)
Quiescent Current (µA)
250
225
200
VS = 5V, VOUT – VPIN3 = 5V
175
150
VS = +15V, VOUT – VPIN3 = 0V
125
100
200
VS = 2.7V
150
100
50
75
VS = +5V, VOUT – VPIN3 = 0V
50
0
0
10
20
30
40
Temperature (°C)
50
60
70
0
5
10
18
160
16
140
14
120
12
10
8
6
30
35
40
3pF
1MΩ
100
8pF
80
IBIAS
60
λ
40
4
0
2
–20
IDARK
VB
OPT101
–40
0
5
10
15
20
VS (V)
25
30
35
40
0
OUTPUT NOISE VOLTAGE vs
MEASUREMENT BANDWIDTH, VS = +15, VOUT – VPIN3 = 15V
RF = 10MΩ
10–7
RF = 1MΩINTERNAL
Noise Effective Power (W)
Noise Voltage (µVrms)
IFEEDBACK
(IBIAS-IDARK)
20
0
RF = 100kΩ || 33pF
100
10
RF = 50kΩ || 56pF
1
10
20
30
40
Temperature (°C)
50
60
70
NOISE EFFECTIVE POWER vs
MEASUREMENT BANDWIDTH, VS = +15, VOUT – VPIN3 = 0
10–8
RF = 100k || 33pF
10–9
RF = 50k || 56pF
RF = 1MΩ INTERNAL
10–10
RF = 10MΩ
10–11
10–12
0.1
10
6
15
20
25
VOUT – VPIN3 (V)
(IBIAS-IDARK) vs TEMPERATURE
180
IBIAS-IDARK (pA)
Short Circuit Current (mA)
SHORT CIRCUIT CURRENT vs VS
20
1000
VS = 15V
VS = 36V
275
100
1k
10k
Frequency (Hz)
100k
10
1M
100
1k
10k
Bandwidth (Hz)
100k
1M
OPT101
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SBBS002A
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
SMALL SIGNAL RESPONSE
LARGE SIGNAL RESPONSE
SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF)
(Pin 3 = 0V)
SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF)
(Pin 3 = –15V)
OPT101
SBBS002A
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7
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT101. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is 7.5mV dc with no light and
increases with increasing illumination.
Photodiode current, ID, is proportional to the radiant power, or
flux, (in watts) falling on the photodiode. At a wavelength of
650nm (visible red) the photodiode Responsivity, RI, is
approximately 0.45A/W. Responsivity at other wavelengths is
shown in the typical performance curve “Responsivity vs
Wavelength.”
source to sink currents up to approximately 100µA. The
benefits of this current sink are shown in the typical
performance curves “Small Signal Response (CLOAD =
10,000pF)” which compare operation with pin 3 grounded
and connected to –15V.
Due to the architecture of this output stage current sink, there
is a slight increase in operating current when there is a voltage
between pin 3 and the output. Depending on the magnitude of
this voltage, the quiescent current will increase by
approximately 100µA as shown in the typical performance
curve "Quiescent Current vs (VOUT – VPIN3)".
VS
VS = +2.7 to +36V
2
1
0.01 to 0.1µF
2
0.01 to 0.1µF
3pF
1
4
1MΩ
3pF
4
1MΩ
8pF
8pF
5
5
λ
VB
OPT101
8
λ
Dark output ≈ 7.5mV
Positive going output
with increased light
VB
OPT101
8
3
3
0.01 to 0.1µF
Common
–V = –1V to (VS – 36V)
Common
FIGURE 1. Basic Circuit Connections.
FIGURE 2. Bipolar Power Supply Circuit Connections.
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power. The response curve “Output Voltage vs
Irradiance” is based on the photodiode area of 5.2mm2.
NOISE PERFORMANCE
Noise performance of the OPT101 is determined by the op
amp characteristics, feedback components and photodiode
capacitance. The typical performance curve “Output Noise
Voltage vs Measurement Bandwidth” shows how the noise
varies with RF and measured bandwidth (0.1Hz to the
indicated frequency), when the output voltage minus the
voltage on pin 3 is greater than approximately 50mV. Below
this level, the output stage is powered down, and the effective
bandwidth is decreased. This reduces the noise to
approximately 1/3 the nominal noise value of 300µVrms, or
100µVrms. This enables a low level signal to be resolved.
The OPT101’s voltage output is the product of the photodiode
current times the feedback resistor, (IDRF), plus a pedestal
voltage, VB, of approximately 7.5mV introduced for single
supply operation. The internal feedback resistor is laser trimmed
to 1MΩ. Using this resistor, the output voltage responsivity, RV,
is approximately 0.45V/µW at 650nm wavelength. Figure 1
shows the basic circuit connections for the OPT101 operating
with a single power supply and using the internal 1MΩ feedback
resistor for a response of 0.45V/µW at 650nm. Pin 3 is
connected to common in this configuration.
CAPACITIVE LOADING
The OPT101 is capable of driving load capacitances of 10nF
without instability. However, dynamic performance with
capacitive loads can be improved by applying a negative
bias voltage to Pin 3 (shown in Figure 2). This negative
power supply voltage allows the output to go negative in
response to the reactive effect of a capacitive load. An
internal JFET connected between pin 5 (output) and pin 3
allows the output to sink current. This current sink capability
can also be useful when driving the capacitive inputs of
some analog-to-digital converters which require the signal
8
Noise can be reduced by filtering the output with a cutoff
frequency equal to the signal bandwidth. This will improve
signal-to-noise ratio. Also, output noise increases in proportion
to the square root of the feedback resistance, while responsivity
increases linearly with feedback resistance. Best signal-to-noise
ratio is achieved with large feedback resistance. This comes
with the trade-off of decreased bandwidth.
The noise performance of the photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power that would produce an output signal equal to the
noise level. NEP has the units of radiant power (watts), or
Watts/√Hz to convey spectral information about the noise.
The typical performance curve “Noise Effective Power” vs
Measurement Bandwidth" illustrates the NEP for the OPT101.
OPT101
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SBBS002A
DARK ERRORS
The dark errors in the specification table include all sources.
The dominant source of dark output voltage is the “pedestal”
voltage applied to the non-inverting input of the op amp.
This voltage is introduced to provide linear operation in the
absence of light falling on the photodiode. Photodiode dark
current is approximately 2.5pA and contributes virtually no
offset error at room temperature. The bias current of the op
amp's summing junction (– input) is approximately 165pA.
The dark current will be subtracted from the amplifier's bias
current, and this residual current will flow through the
feedback resistor creating an offset. The effects of temperature
on this difference current can be seen in the typical
performance curve “(IBIAS – IDARK) vs Temperature.” The
dark output voltage can be trimmed to zero with the optional
circuit shown in Figure 3. A low impedance offset driver (op
amp) should be used to drive pin 8 because this node has
signal-dependent currents.
This capacitor eliminates gain peaking and prevents
instability. The value of CEXT can be determined from the
table in Figure 4. Values of RF, other than shown in the table,
can be interpolated.
VS
2
1
3pF
4
1MΩ
8pF
λ
VB
OPT101
8
3
(a)-Series REXT
1
3pF
4
1MΩ
8pF
5
λ
VB
OPT101
8
Common
CEXT
5
VS
2
REXT
REXT
(MΩ)
CEXT
(pF)
DC Gain
(x106V/A)
Bandwidth
(kHz)
1
2
5
10
50
50
25
10
5
—
2
3
6
11
51
8
6
2.5
1.3
0.33
VO
CEXT
Adjust R1
for VO = 0V
with no light.
REXT
3
VS
–V
2
1
3pF
4
+15V
OPA177
1MΩ
R1
500kΩ
8pF
1/2 REF200
100µA
–15V
5
λ
–15V
VB
OPT101
FIGURE 3. Dark Error (Offset) Adjustment Circuit.
8
CHANGING RESPONSIVITY
An external resistor, REXT, can be connected to set a different
voltage responsivity. To increase the responsivity, this resistor
can be placed in series with the internal 1MΩ (Figure 4a), or
the external resistor can replace the internal resistor by not
connecting pin 4 (Figure 4b). The second configuration also
allows the circuit gain to be reduced below 106V/A by using
external resistors of less than 1MΩ.
Figure 4 includes tables showing the responsivity and
bandwidth. For values of RF less than 1MΩ, an external
capacitor, CEXT should be connected in parallel with RF.
(b)-External Feedback
REXT
(MΩ)
CEXT
(pF)
DC Gain
(x106V/A)
Bandwidth
(kHz)
0.05(1)
0.1(1)
1
2
5
10
50
56
33
—
—
—
—
—
0.05
0.1
1
2
5
10
50
58
44
23
9.4
3.6
1.8
0.34
Note: (1) May require 1kΩ in series with pin 5 when driving
large capacitances.
FIGURE 4. Changing Responsivity with External Resistor.
OPT101
SBBS002A
3
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9
DYNAMIC RESPONSE
Using the internal 1MΩ resistor, the dynamic response of
the photodiode/op amp combination can be modeled as a
simple R • C circuit with a –3dB cutoff frequency of
approximately 14kHz. The R and C values are 1MΩ and
11pF respectively. By using external resistors, with less than
3pF parasitic capacitance, the frequency response can be
improved. An external 1MΩ resistor used in the configuration
shown in Figure 4b will create a 23kHz bandwidth with the
same 106V/A dc transimpedance gain. This yields a rise time
of approximately 15µs (10% to 90%). Dynamic response is
not limited by op amp slew rate. This is demonstrated by the
dynamic response oscilloscope photographs showing virtually
identical large-signal and small-signal response.
Applications using a feedback resistor significantly larger than
the internal 1MΩ resistor may require special consideration.
Input bias current of the op amp and dark current of the
photodiode increase significantly at higher temperatures. This
increase combined with the higher gain (RF > 1MΩ) can cause
the op amp output to be driven to ground at high temperatures.
Such applications may require a positive bias voltage applied to
pin 8 to ensure that the op amp output remains in the linear
operating region when the photodiode is not exposed to light.
Alternatively, a dual power supply can be used. The output may
be negative when sensing dark conditions.
LIGHT SOURCE POSITIONING
The OPT101 is tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although IC amplifiers are light-sensitive to
some degree, the OPT101 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
metal, and the photodiode area is very large relative to the op
amp input circuitry.
Dynamic response will vary with feedback resistor value as
shown in the typical performance curve “Responsivity vs
Frequency.” Rise time (10% to 90%) will vary according to
the –3dB bandwidth produced by a given feedback resistor
value:
tr =
If your light source is focused to a small area, be sure that it
is properly aimed to fall on the photodiode. A narrowly
focused beam falling on only the photodiode will provide
improved settling times compared to a source that uniformly
illuminates the full area of the die. If a narrowly focused light
source were to miss the photodiode area and fall only on the
op amp circuitry, the OPT101 would not perform properly.
The large 0.09" x 0.09" (2.29mm x 2.29mm) photodiode area
allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible, as it appears very dark
compared to the surrounding active circuitry.
where:
tr is the rise time (10% to 90%)
fC is the –3dB bandwidth
LINEARITY PERFORMANCE
The photodiode is operated in the photoconductive mode so
the current output of the photodiode is very linear with
radiant power throughout a wide range. Nonlinearity remains
below approximately 0.05% up to 100µA photodiode current.
The photodiode can produce output currents of 1mA or
greater with high radiant power, but nonlinearity increases
to several percent in this region.
The incident angle of the light source also effects the apparent
sensitivity in uniform irradiance. For small incident angles, the
loss in sensitivity is simply due to the smaller effective light
gathering area of the photodiode (proportional to the cosine of
the angle). At a greater incident angle, light is diffracted and
scattered by the package. These effects are shown in the typical
performance curve “Responsivity vs Incident Angle.”
2
0.35
fC
This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.
1
0.01 to
0.1µF
3pF
4
1MΩ
+2.7 to
+36V
8pF
5
λ
VOUT
VB
OPT101
8
3
FIGURE 5. Three-Wire Remote Light Measurement.
10
OPT101
www.ti.com
SBBS002A
+15V
1
2
3pF
4
1MΩ
8pF
+15V
V01
λ
Difference Output
2
7
1
5
6
RG
VB
5
8
OPT101
3
8
50kΩ
RG
4
3
–15V
+15V
1
2
VOUT = (V02 – V01) 1+
INA118
3pF
+15V
Log of Ratio Measurement
(Absorbance)
4
1MΩ
6
8pF
100kΩ
100kΩ
5
LOG100
VOUT = K log10 (V02/V01)
7
1
V02
λ
14
9
VB
1nF
3
OPT101
8
3
–15V
FIGURE 6. Differential Light Measurement.
+15V
2
1
3pF
3.3nF
1MΩ
+15V
+15V
10kΩ
2
REF102
10V
7
2
OPA627
100kΩ
3
6
4
8pF
6
270Ω
5
LED
4
VB
IN4148
4
–15V
11kΩ
OPT101
0.03µF
8
3
Glass Microscope Slide
Approximately
92% light
available for application.
LED
≈ 8%
OPT101
FIGURE 7. LED Output Regulation Circuit.
OPT101
SBBS002A
www.ti.com
11
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2003
PACKAGING INFORMATION
ORDERABLE DEVICE
STATUS(1)
PACKAGE TYPE
PACKAGE DRAWING
PINS
PACKAGE QTY
OPT101P
ACTIVE
PDIP
NTC
8
50
OPT101P-J
ACTIVE
SOP
DTL
8
50
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
MECHANICAL DATA
MPDI059 – APRIL 2001
NTC (R-PDIP-T8)
PLASTIC DUAL-IN-LINE
D
0.390 (9,91)
0.360 (9,14)
8
Photodiode L
Area
5
0.275 (6,99)
0.238 (6,05)
Index
Area
1
4
D
Polished
Surface
E
0.120 (3,05)
0.100 (2,54)
5.5°–8.5°
0.135 (3,43)
0.120 (3,05)
H 0.070 (1,78)
0.045 (1,14)
Base Plane
0.325 (8,26)
0.300 (7,62)
C
0.165 (4,19) MAX
–C–
Seating Plane
D 0.005 (0,13) MIN
1/2 Lead
4 PL
H
0.045 (1,143)
0.030 (0,762)
4 PL
0.022 (0,56)
E
0.160 (4,06)
0.115 (2,92)
0.015 (0,38) MIN
0.100 (2,54)
C
C
0.060 (1,52)
MAX
F
0.014 (0,36)
0.300 (7,63)
0.015 (0,38)
0.008 (0,20)
0.430 (10,92)
MAX
F
0.010 (0,25) M C
4202487/A 03/01
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Dimensions are measured with the package
seated in JEDEC seating plane gauge GS-3.
D. Dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 (0,25).
E. Dimensions measured with the leads constrained to be
perpendicular to Datum C.
F. Dimensions are measured at the lead tips with the
leads unconstrained.
G. Pointed or rounded lead tips are preferred to ease
insertion.
H. Maximum dimensions do not include dambar
protrusions. Dambar protrusions shall not exceed
0.010 (0,25).
POST OFFICE BOX 655303
I. Distance between leads including dambar protrusions
to be 0.005 (0,13) minumum.
J. A visual index feature must be located within the
cross–hatched area.
K. For automatic insertion, any raised irregularity on the
top surface (step, mesa, etc.) shall be symmetrical
about the lateral and longitudinal package centerlines.
L. Center of photodiode must be within 0.010 (0,25) of
center of photodiode area
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