HITACHI 2SC3553

2SC3553
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1
23
1. Emitter
2. Collector
3. Base
2SC3553
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
35
V
Collector to emitter voltage
VCEO
35
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
500
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
35
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
35
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 20 V, IE = 0
60
—
320
VCE = 3 V, IC = 10 mA
hFE2
10
—
—
VCE = 3 V, IC = 500 mA*2
Collector to emitter saturation
voltage
VCE(sat)
—
0.2
0.6
V
I C = 150 mA, IB = 15 mA*2
Base to emitter voltage
VBE
—
0.64
—
V
VCE = 3 V, IC = 10 mA
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SC3553 is grouped by h FE1 as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SC1213.
2
2SC3553
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
2.2 Max
0.6
0.6 Max
0.45 ± 0.1
14.5 Min
1.8 Max
3.2 Max
4.2 Max
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
—
—
0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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