Inchange Semiconductor Product Specification 2SC3973 2SC3973A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation APPLICATIONS ・For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER 2SC3973 Collector-base voltage INC D N O IC R O T UC CONDITIONS VALUE 800 Open emitter 2SC3973A Collector-emitter voltage Open base Emitter-base voltage Open collector UNIT V 900 500 V 8 V IC Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current 4 A PC Collector power dissipation TC=25℃ 45 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3973 2SC3973A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V 0.1 mA 0.1 mA 2SC3973 ICBO CONDITIONS MIN VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 固电 ts A H C IN tf Fall time Turn-on time Storage time IC=4A; IB1=0.8A IB2=-1.6A;VCC=200V 2 R O T UC D N O IC IC=0.5A ; VCE=10V EM S E NG Switching times ton V VCB=900V; IE=0 Emitter cut-off current 体 导 半 UNIT VCB=800V; IE=0 IEBO Transition frequency MAX 500 Collector cut-off current 2SC3973A fT TYP. 20 MHz 1.0 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3973 2SC3973A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC3973 2SC3973A Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC