HITACHI 2SD2019

2SD2019
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1
1. Emitter
2. Collector
3. Base
2
3
ID
15 kΩ
(Typ)
0.5 kΩ
(Typ)
1
2SD2019
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
8
V
Collector current
IC
1.5
A
Collector peak current
I C(peak)
3
A
10
W
150
°C
–55 to +150
°C
1.5
A
1
Collector power dissipation
PC *
Junction temperature
Tj
Storage temperature
Tstg
C to E diode forward current
Note:
ID*
1
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
150
—
—
V
I C = 1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
80
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
5
µA
VCB = 120 V, IE = 0
I CEO
—
—
5
µA
VCE = 65 V, RBE = ∞
hFE
2000
—
—
VCE = 2 V, IC = 0.15 A*1
hFE
5000
—
30000
VCE = 2 V, IC = 1 A*1
hFE
1000
—
—
VCE = 2 V, IC = 1.5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 1 A, IB = 1 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 1 A, IB = 1 mA*1
C to E diode forward voltage
VD
—
—
3.0
V
I D = 1.5 A*1
DC current transfer ratio
Note:
2
1. Pulse test.
2SD2019
Maximum Collector Dissipation Curve
Area of Safe Operation
10
iC (peak)
Collector current IC (A)
4
IC (max)
1.0
0.3
0.1
0.03
Ta = 25°C
1 shot pulse
0.01
0
50
100
Case temperature TC (°C)
s
0µ
8
10
3
s
s
m
1 m 10
on
=
ati
er )
PW
Op 25°C
DC =
(T C
Collector power dissipation Pc (W)
12
1
150
3
10
30
100
Collector to emitter voltage VCE (V)
Transient Thermal Resistance
10
Typical Output Characteristics
2.0
180
3
1.0
10
o
st
10
Collector current IC (A)
Thermal resistance θj-c (°C/W)
10 ms to 10 s
ms
µ
0.3
0.1
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Time t
1.6
1.2
0.8
200
160
140
120
100
80
60 µA
0.4
Ta = 25°C
IB = 0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
3
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
100,000
30,000
10,000
3,000
1,000
300
VCE = 2 V
100
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
10
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD2019
Saturation Voltage vs. Collector Current
10
3
VBE (sat)
1.0
VCE (sat)
0.3
lC = 100 lB
Ta = 25°C
0.1
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
Typical Characteristics of
Emitter to Collector Diode
2.0
Diode current ID (A)
1.6
1.2
0.8
0.4
Ta = 25°C
0
4
0.4
0.8
1.2
1.6
1.8
Emitter to collector diode forward voltage
VECF (V)
10
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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