PANASONIC 2SD946

Power Transistors
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
Unit: mm
8.0+0.5
–0.1
For low-frequency amplification
3.2±0.2
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
2SD0946
Collector-base voltage
(Emitter open)
VCBO
Rating
Unit
30
V
2SD0946A
60
2SD0946B
100
Collector-emitter voltage 2SD0946
(Base open)
2SD0946A
VCEO
25
0.5±0.1
4.6±0.2
V
1
80
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2
Symbol
Collector-base voltage
2SD0946
(Emitter open)
2SD0946A
Conditions
C
B
2SD1263
Min
50
Emitter-base voltage (Collector open)
VEBO
IE = 100 µA, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
Forward current transfer ratio *1, 2
hFE
VCE = 10 V, IC = 1 A
VCE(sat)
VBE(sat)
Transition frequency
V
25
80
Base-emitter saturation voltage *1
Unit
100
IC = 1 mA, IB = 0
VCEO
2SD0946B
Collector-emitter saturation voltage
Max
30
2SD0946A
*1
Typ
E
60
2SD0946B
Collector-emitter voltage
(Base open)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
≈ 200 Ω
IC = 100 µA, IE = 0
VCBO
3
1.76±0.1
Internal Connection
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
0.5±0.1
2.3±0.2
50
2SD0946B
Emitter-base voltage (Collector open)
0.75±0.1
3.05±0.1
3.8±0.3
• Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
16.0±1.0
■ Features
11.0±0.5
φ 3.16±0.1
5
V
0.1
µA
0.1
µA
40 000

IC = 1 A, IB = 1 mA
1.8
V
IC = 1 A, IB = 1 mA
2.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
fT
V
4 000
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJD00164BED
1
2SD0946, 2SD0946A, 2SD0946B
Collector power dissipation PC (W)
Without heat sink
1.2
0.8
0.4
0
0
40
80
120
160
IC/IB=1000
10
1
TC=–25˚C
100˚C
25˚C
0.1
0.01
0.01
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
25˚C
TC=100˚C
–25˚C
103
0.1
1
Collector current IC (A)
2
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
VCE=10V
24
16
12
8
4
0
1
10
Collector-base voltage VCB (V)
SJD00164BED
TC=–25˚C
1
100˚C
25˚C
0.1
0.1
1
Collector current IC (A)
IE=0
f=1MHz
TC=25˚C
20
IC/IB=1000
10
0.01
0.01
1
Cob  VCB
105
102
0.01
0.1
Collector current IC (A)
hFE  IC
104
VBE(sat)  IC
Base-emitter saturation voltage VBE(sat) (V)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
PC  Ta
1.6
100
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and semiconductors described in this material
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2002 JUL