SMD Type Product specification 2SJ502 Features Package Dimensions · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 1 0.5 1.5 0 to 0.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings Unit VDSS VGSS –30 V ±20 V ID –0.5 A IDP PD PW≤10µs, duty cycle≤1% –2.0 A 0.25 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance http://www.twtysemi.com Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Conditions ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–300mA ID=–300mA, VGS=–10V Ratings min max –30 300 4008-318-123 Unit V –1.0 ID=–300mA, VGS=–4V [email protected] ty p –10 µA ±10 µA –2.5 800 V mS 360 600 mΩ 690 970 mΩ 1 of 1