IC IC SMD Type Ultrahigh-Speed Switching Applications KTS2004 TSSOP-8 Unit: mm Features Low ON resistance. 4V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V 4 A Drain Current(DC) ID Drain Current(pulse) *1 IDP 25 A Allowable Power Dissipation *2 PD 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) www.kexin.com.cn 1 IC IC SMD Type KTS2004 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Symbol Testconditons V(BR)DSS ID=1mA, VGS=0 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate-to-Source Leakage Current IGSS VGS = Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance VDS = 10 V, ID = 4 A RDS(on)1 VGS = 10 V, ID = 4A RDS(on)2 VGS = 4 V, ID = 4 A Input Capacitance Ciss Output Capacitance Coss VDS = 10 V,f = 1 MHz Max 30 Unit V 10 A 10 1.0 5 2.4 8 A V S 36 46 m 58 78 m 460 pF 250 pF Reverse Transfer Capacitance Crss 120 pF Turn-on Delay Time td(on) 10 ns Rise Time Turn-off Delay Time Fall Time tr 90 ns td(off) See Specified Test Circuit 70 ns tf 75 ns Total Gate Charge Qg VDS= 10 V 15 nC Gate-to-Source Charge Qgs VGS = 10 V 3 nC Gate-Drain"Miller" Charge Qgd ID = 4 A 4 nC Diode Forward Voltage VSD IS= 4 A, VGS = 0 V Switching Time Test Circuit 2 Typ 16 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs Min www.kexin.com.cn 0.85 1.2 V