ETC 2SK2940(L)|2SK2940(S)

2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-563B (Z)
3rd. Edition
Jul. 1998
Features
• Low on-resistance
R DS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
LDPAK
4
D
4
1
G
1
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2940(L),2SK2940(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
180
A
45
A
45
A
173
mJ
75
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note1
Note3
EAR
Note3
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2SK2940(L),2SK2940(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
60
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
I D = 1mA, VDS = 10V
Static drain to source on state
RDS(on)
—
0.010
0.013
Ω
I D = 20A, VGS = 10VNote4
resistance
RDS(on)
—
0.015
0.025
Ω
I D = 20A, VGS = 4V Note4
Forward transfer admittance
|yfs|
24
40
—
S
I D = 20A, VDS = 10V Note4
Input capacitance
Ciss
—
2200
—
pF
VDS = 10V
Output capacitance
Coss
—
1050
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
320
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
25
—
ns
I D = 20A, VGS = 10V
Rise time
tr
—
200
—
ns
RL = 1.5Ω
Turn-off delay time
t d(off)
—
320
—
ns
Fall time
tf
—
240
—
ns
Body–drain diode forward voltage
VDF
—
0.95
—
V
I F = 45A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
60
—
ns
I F = 45A, VGS = 0
diF/ dt =50A/µs
Note:
4. Pulse test
3
2SK2940(L),2SK2940(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
I D (A)
75
Drain Current
Channel Dissipation
Pch (W)
300
50
25
100
PW
DC
30
10
3
1
10
µs
0µ
1m s
s
10
=1
0m
s(
Op
era
1s
ho
t)
Operation in
Tc
=2
this area is
5°
limited by R DS(on)
C)
tio
n(
0.3
0
50
100
150
0.1
0.1
200
Case Temperature Tc (°C)
Ta = 25 °C
3
0.3
1
10
Drain to Source Voltage V
30
100
(V)
DS
Typical Output Characteristics
I D (A)
Drain Current
4V
V DS = 10 V
Pulse Test
Pulse Test
30
3.5 V
I D (A)
5V
40
Typical Transfer Characteristics
50
3V
Drain Current
50
10 V 6 V
20
10
40
30
20
25°C
Tc = 75°C
10
–25°C
VGS = 2.5 V
0
4
2
4
6
Drain to Source Voltage V
8
DS(V)
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
2SK2940(L),2SK2940(S)
Pulse Test
0.4
0.3
I D = 20 A
0.2
10 A
0.1
5A
Static Drain to Source on State Resistance
R DS(on) (mW)
0
12
4
8
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
I D = 20 A 10 A
24
5A
V GS = 4 V
16
5, 10, 20 A
8
10 V
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
0
40
80
120
160
Case Temperature Tc (°C)
VGS = 4 V
10
10 V
5
2
1
16
20
V GS (V)
1
2
5
10
20
50
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Drain to Source On State Resistance
R DS(on) (mW)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
200
V DS = 10 V
Pulse Test
100
50
Tc = –25 °C
20
25 °C
10
5
75 °C
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
5
2SK2940(L),2SK2940(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
10
0.1
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
1000
Coss
500
200
0
V DS
12
8
20
4
V DD = 50 V
25 V
10 V
40
80
120
160
Qg (nc)
20
30
40
50
0
200
1000
500
Switching Time t (ns)
V DD = 10 V
25 V
50 V
V GS (V)
V GS
Gate Charge
6
16
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 45 A
10
Drain to Source Voltage V DS (V)
Switching Characteristics
20
40
0
VGS = 0
f = 1 MHz
50
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
80
60
Crss
100
Dynamic Input Characteristics
100
Ciss
2000
t d(off)
tf
200
100
tr
50
t d(on)
20
V GS = 10 V, V DD = 30 V
PW = 10 µs, duty < 1 %
10
0.1 0.2 0.5 1
2
5 10 20
Drain Current
I D (A)
50 100
2SK2940(L),2SK2940(S)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
50
40
30
10 V
V GS = 0, –5 V
5V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
200
I AP = 45 A
V DD = 25 V
duty < 0.1 %
Rg > 50 W
160
120
80
40
0
25
V SD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50W
0
VDD
7
2SK2940(L),2SK2940(S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
g s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
q ch – c(t) = g s (t) • q ch – c
q ch – c = 1.67 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
100 m
10 m
Pulse Width PW (S)
1
Switching Time Test Circuit
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50W
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK2940(L),2SK2940(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
9
2SK2940(L),2SK2940(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
7.8
7.0
(1.5)
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
2SK2940(L),2SK2940(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
11
2SK2940(L),2SK2940(S)
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Colophon 2.0
12