BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) 1 • Noise figure NF = 2.2 dB at 1.8 GHz VPS05605 • typical device voltage VD = 2 V to 5 V 3 +V • Reverse isolation < 35 dB (appl.2) 4 OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BGA 427 BMs 1, IN Q62702-G0067 2, GND Package 3, +V 4, Out SOT-343 Maximum Ratings Parameter Symbol Value Unit Device current ID 25 mA Device voltage VD,+V Total power dissipation, T S ≤ tbd °C Ptot 150 mW RF input power PRFin -10 dBm Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature T stg -65 ...+150 6 V Thermal Resistance Junction - soldering point 1) RthJS ≤ tbd K/W 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1 Insertion power gain |S21| 2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz typ. Unit max. dB - 27 22 28.5 22 - - 1.9 2 2.2 - Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz S12 Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz IP 3out - +7 - dBm RL in - >12 - dB RL out - >9 - NF Typical configuration Appl.2 Appl.1 +V +V 100 pF RF OUT 1 nF 10 nF 100 nH 2.2 pF BGA 427 100 pF 100 pF 100 pF RF IN RF OUT GND EHA07379 BGA 427 100 pF RF IN GND EHA07380 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path! (appl.1) 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -11-1998 BGA 427 S-Parameters at TA = 25 °C, (Testfixture, Appl.1) f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3 0.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.258 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 +V BGA 427-chip including parasitics 13 R2 T2 R1 IN R3 C’-E’Diode 14 C1 11 C P3 T1 C P1 C P4 C P5 R4 C P2 12 GND Semiconductor Group Semiconductor Group EHA07381 33 OUT T1 T2 R1 R2 R3 R4 C1 CP1 CP2 CP3 CP4 T501 T501 14.5kΩ 280Ω 2.4kΩ 170Ω 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF CP5 C’-E’-diode T1 Au 1998-11-01 -11-1998 BGA 427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 aA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 Ω IRB = 0.21215 mA RBM = 1.3491 Ω RE = 1.9289 RC = 0.12691 Ω CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 Ω LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: L2 OUT C1 C3 L1 C CB C2 14 L BO L BI IN 11 BGA 427 Chip 12 C BE 13 L CI L CO +V C’-E’Diode C CE L EI L EO GND EHA07382 Valid up to 3GHz Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Au 1998-11-01 -11-1998 BGA 427 Insertion power gain |S 21| 2 = f (f) Noise figure NF = f (f) VD, I D = parameter VD,ID = parameter 5.0 35 VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA dB 4.0 25 VD=5V, ID=17.5mA VD=3V, ID=9.5mA 3.5 NF |S 21|2 dB 20 3.0 2.5 15 2.0 1.5 10 1.0 5 0.5 0 -1 10 10 0 GHz 10 0.0 -1 10 1 f 10 0 GHz 10 1 f Intercept point at the output IP 3out = f (f) VD,ID = parameter 25 IP3out dBm VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA 15 10 5 0 -1 10 10 0 GHz 10 1 f Semiconductor Group Semiconductor Group 55 Au 1998-11-01 -11-1998